公开(公告)号：US20080096331A1

公开(公告)日：2008-04-24

申请号：US11538803

申请日：2006-10-04

Applicant: Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

Inventor： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

IPC: H01L21/84 ,  H01L21/8234 ,  H01L21/469 ,  H01L21/31 ,  H01L21/336

CPC classification number: H01L21/31633 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/823807 ,  H01L23/3192 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating strained silicon transistors is disclosed. First, a semiconductor substrate is provided, in which the semiconductor substrate includes a gate, at least a spacer, and a source/drain region formed thereon. Next, a precursor, silane, and ammonia are injected, in which the precursor is reacted with silane and ammonia to form a high compressive stress film on the surface of the gate, the spacer, and the source/drain region. Preferably, the high compressive stress film can be utilized in the fabrication of a poly stressor, a contact etch stop layer, and dual contact etch stop layers.

Abstract translation: 公开了制造应变硅晶体管的方法。 首先，提供半导体衬底，其中半导体衬底包括栅极，至少一个间隔物和形成在其上的源极/漏极区域。 接下来，注入前体，硅烷和氨，其中前体与硅烷和氨反应，以在栅极，间隔物和源极/漏极区的表面上形成高压缩应力膜。 优选地，高压缩应力膜可以用于制造多应力器，接触蚀刻停止层和双接触蚀刻停止层。

公开(公告)号：US20080009134A1

公开(公告)日：2008-01-10

申请号：US11482604

申请日：2006-07-06

Applicant: Tsung-Yu Hung ,  Chun-Chieh Chang ,  Chao-Ching Hsieh ,  Yi-Wei Chen ,  Yu-Lan Chang ,  Chien-Chung Huang

Inventor： Tsung-Yu Hung ,  Chun-Chieh Chang ,  Chao-Ching Hsieh ,  Yi-Wei Chen ,  Yu-Lan Chang ,  Chien-Chung Huang

IPC: H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/28518

Abstract: A method for fabricating a metal silicide is described. First, a silicon material layer is provided. An alloy layer is formed on the silicon material layer, and the alloy layer is made from a first metal and a second metal, wherein, the first metal is a refractory metal, and the second metal is selected from a group consisting of Pt, Pd, Mo, Ru, and Ta. A first rapid thermal process (RTP) is performed at a first temperature. A first cleaning process is performed by using a cleaning solution. A second RTP is performed at a second temperature, wherein the second temperature is higher than the first temperature. A second cleaning process is performed by using a cleaning solution including a hydrochloric acid.

Abstract translation: 对金属硅化物的制造方法进行说明。 首先，提供硅材料层。 在硅材料层上形成合金层，合金层由第一金属和第二金属制成，其中第一金属为难熔金属，第二金属选自Pt，Pd ，Mo，Ru和Ta。 在第一温度下进行第一快速热处理（RTP）。 通过使用清洁溶液进行第一清洁处理。 在第二温度下执行第二RTP，其中第二温度高于第一温度。 通过使用包含盐酸的清洗溶液进行第二清洗处理。

公开(公告)号：US20070117375A1

公开(公告)日：2007-05-24

申请号：US11164480

申请日：2005-11-24

Applicant: Chao-Lon Yang ,  Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Shao-Ta Hsu

Inventor： Chao-Lon Yang ,  Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Shao-Ta Hsu

IPC: H01L21/4763

CPC classification number: H01L21/76829 ,  H01L21/76802 ,  H01L21/76837

Abstract: A method of forming a contact is provided. A substrate having at least two conductive devices is provided. A spacing is located between the two conductive devices. A first dielectric layer is formed over the substrate to cover the two conductive devices and the spacing. A seam is formed in the first dielectric layer within the spacing. Then, a portion of the first dielectric layer is removed to form an opening so that the width of the seam is expanded. A second dielectric layer is formed over the first dielectric layer to fill the opening. A portion of the second dielectric layer and a portion of the first dielectric layer within the spacing are removed until a portion of the surface of the substrate is exposed and a contact opening is formed in the location for forming the contact. Finally, conductive material is deposited to fill the contact opening.

Abstract translation: 提供了形成接触的方法。 提供具有至少两个导电装置的基板。 间隔位于两个导电器件之间。 第一电介质层形成在衬底上以覆盖两个导电器件和间隔。 在间隔内的第一电介质层中形成接缝。 然后，去除第一电介质层的一部分以形成开口，使得接缝的宽度扩大。 在第一介电层上方形成第二电介质层以填充开口。 去除第二电介质层的一部分和间隔内的第一电介质层的一部分，直到基板表面的一部分露出，并且在用于形成接触的位置形成接触开口。 最后，沉积导电材料以填充接触开口。

公开(公告)号：US07199040B2

公开(公告)日：2007-04-03

申请号：US10841562

申请日：2004-05-10

Applicant: Yu-Ru Yang ,  Chien-Chung Huang

Inventor： Yu-Ru Yang ,  Chien-Chung Huang

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/76844 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76862

Abstract: A barrier layer structure includes a first dielectric layer forming on a conductive layer and having a via being formed in the first dielectric layer, wherein the via in the first dielectric layer is connected to the conductive layer. A first metal layer is steppedly covered on the first dielectric layer. A layer of metallized materials is steppedly covered on the first metal layer, but the layer of metallized materials does not cover the first metal layer above the via bottom connected to the conductive layer in the dielectric layer. A second metal layer is steppedly covered on the layer of metallized materials, and the second metal layer is covered the first metal layer above the via bottom connected to the conductive layer in the dielectric layer. The barrier layer structure will have lower resistivity in the bottom via of the first dielectric layer and it is capable of preventing copper atoms from diffusing into the dielectric layer.

Abstract translation: 阻挡层结构包括在导电层上形成的第一介电层，并且在第一介电层中形成通孔，其中第一介电层中的通孔连接到导电层。 第一金属层被阶梯式地覆盖在第一介电层上。 金属化材料层被阶梯式地覆盖在第一金属层上，但是金属化材料层不覆盖连接到电介质层中的导电层的通孔底部上的第一金属层。 第二金属层被阶梯式地覆盖在金属化材料层上，并且第二金属层覆盖连接到电介质层中的导电层的通孔底部上的第一金属层。 阻挡层结构在第一电介质层的底部通孔中具有较低的电阻率，并且能够防止铜原子扩散到电介质层中。

公开(公告)号：US07133735B2

公开(公告)日：2006-11-07

申请号：US11043143

申请日：2005-01-27

Applicant: Wen-Chang Kuo ,  Chien-Chung Huang ,  Huei-Wen Yang ,  Yi-Lin Huang

Inventor： Wen-Chang Kuo ,  Chien-Chung Huang ,  Huei-Wen Yang ,  Yi-Lin Huang

IPC: G06F19/00

CPC classification number: G05B19/41865 ,  G05B2219/32086 ,  G05B2219/32306 ,  G05B2219/45031 ,  Y02P90/20

Abstract: A system and method thereof for experiment management. A storage device stores an experiment plan record, a merge constraint and an integration rule. A processing unit configured to acquire a first experiment plan from the experiment plan record, and a second experiment plan. The processing unit generates an integrated experiment plan by merging the first experiment plan and the second experiment plan according to the merge constraint and the integration rule, and stores the integrated experiment plan to the storage device.

Abstract translation: 一种用于实验管理的系统及其方法。 存储设备存储实验计划记录，合并约束和集成规则。 一种处理单元，被配置为从实验计划记录获取第一实验计划，以及第二实验计划。 处理单元通过根据合并约束和积分规则合并第一实验计划和第二实验计划来生成集成实验计划，并将集成实验计划存储到存储装置。

公开(公告)号：US20060240666A1

公开(公告)日：2006-10-26

申请号：US10907891

申请日：2005-04-20

Applicant: Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Chien-Chung Huang ,  Po-Chao Tsou ,  Kirk Hsu ,  Tony Lin ,  Le-Tien Jung

Inventor： Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Chien-Chung Huang ,  Po-Chao Tsou ,  Kirk Hsu ,  Tony Lin ,  Le-Tien Jung

IPC: H01L21/44

CPC classification number: H01L21/28518 ,  H01L21/76889

Abstract: A method of forming silicide is described. A layer of refractory metal is deposited on a substrate, and then a first annealing process is performed to form silicide, followed by removal of unreacted metal. Next, a species implanting process is carried out to implant species of neutral atoms into the silicide to break up lattice structure of the silicide, so that the problem of junction leakage induced by spiking and piping diffusion under high temperature during a subsequent second annealing process is avoided.

Abstract translation: 描述了形成硅化物的方法。 将难熔金属层沉积在基材上，然后进行第一退火工艺以形成硅化物，随后除去未反应的金属。 接下来，进行物种植入工艺以将中性原子的种类植入到硅化物中以破坏硅化物的晶格结构，从而在随后的第二退火过程中由高温引起的尖峰和管道扩散引起的结漏电的问题是 避免。

公开(公告)号：US20060167578A1

公开(公告)日：2006-07-27

申请号：US11043143

申请日：2005-01-27

Applicant: Wen-Chang Kuo ,  Chien-Chung Huang ,  Huei-Wen Yang ,  Yi-Lin Huang

Inventor： Wen-Chang Kuo ,  Chien-Chung Huang ,  Huei-Wen Yang ,  Yi-Lin Huang

IPC: G06F19/00

CPC classification number: G05B19/41865 ,  G05B2219/32086 ,  G05B2219/32306 ,  G05B2219/45031 ,  Y02P90/20

Abstract: A system and method thereof for experiment management. A storage device stores an experiment plan record, a merge constraint and an integration rule. A processing unit configured to acquire a first experiment plan from the experiment plan record, and a second experiment plan. The processing unit generates an integrated experiment plan by merging the first experiment plan and the second experiment plan according to the merge constraint and the integration rule, and stores the integrated experiment plan to the storage device.

公开(公告)号：US20060036697A1

公开(公告)日：2006-02-16

申请号：US10918862

申请日：2004-08-16

Applicant: Jun-Liang Lin ,  Chien-Chung Huang ,  Dah-Chung Chen ,  Teng-Hsiang Hsu ,  Shih-Wei Chen ,  Chih-Yang Wang

Inventor： Jun-Liang Lin ,  Chien-Chung Huang ,  Dah-Chung Chen ,  Teng-Hsiang Hsu ,  Shih-Wei Chen ,  Chih-Yang Wang

IPC: G06F15/16

CPC classification number: H04L51/14 ,  H04L51/063 ,  H04L51/18

Abstract: An email system and method thereof. The system includes at least a mail agent to receive at least one email message with a flag. The mail agent assesses the flag, and performs a predefined process including storing mail content of the email message in a database, generating a new email message comprising a link to the mail content of the email message in the database, and forwarding the new email message to recipients of the email message if the flag is a predefined value.

Abstract translation: 电子邮件系统及其方法。 该系统至少包括一个邮件代理，用于接收具有标志的至少一个电子邮件消息。 邮件代理评估标志，并且执行预定义的过程，包括将电子邮件消息的邮件内容存储在数据库中，生成新的电子邮件消息，其包括到数据库中的电子邮件消息的邮件内容的链接，以及转发新的电子邮件消息 如果该标志是一个预定义的值，给电子邮件的收件人。

公开(公告)号：US20050251277A1

公开(公告)日：2005-11-10

申请号：US10839426

申请日：2004-05-05

Applicant: Wen-Chang Kuo ,  Chien-Chung Huang ,  Tien-Der Chiang ,  Yi-Lin Huang ,  Chun Yi Chen ,  Dan-Ru Wang

Inventor： Wen-Chang Kuo ,  Chien-Chung Huang ,  Tien-Der Chiang ,  Yi-Lin Huang ,  Chun Yi Chen ,  Dan-Ru Wang

IPC: G06F19/00

CPC classification number: G06Q10/08

Abstract: A method of problem case packaging handling consists collecting manufacturing problem information from entities associated with fabrication of a semiconductor product; and distributing the manufacturing problem information into problem cases which are stored in a problem database, each problem case representing a respective manufacturing problem and being associated with manufacturing problem information related to that problem case.

Abstract translation: 问题案例包装处理的方法包括从制造半导体产品的实体收集制造问题信息; 并且将制造问题信息分发到存储在问题数据库中的问题情况下，每个问题情况表示相应的制造问题并与制造与该问题情况有关的问题信息相关联。

公开(公告)号：US20050250312A1

公开(公告)日：2005-11-10

申请号：US11155729

申请日：2005-06-16

Applicant: Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

Inventor： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76886 ,  H01L21/76805 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867

Abstract: A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.