Abstract:
A semiconductor package without a chip carrier includes an insulating structure having an opening; an electroplated die pad provided in the opening; a chip attached to the electroplated die pad by a thermally conductive adhesive; a plurality of electrical contacts formed around the electroplated die pad, wherein at least one of the electrical contacts is provided on a top surface of the insulating structure, and the chip is electrically connected to the electrical contacts; and an encapsulant for encapsulating the chip, the insulating structure and the electrical contacts, wherein bottom surfaces of the insulating structure, the electroplated die pad and the electrical contacts, except the at least one electrical contact provided on the top surface of the insulating structure, are exposed from the encapsulant and are flush with a bottom surface of the encapsulant. A fabrication method of the semiconductor package is also provided.
Abstract:
A semiconductor package with a heat sink and a method for fabricating the same are proposed. The heat sink is provided with a rigid and thermally resistant detach member on a top surface thereof, and is attached via its bottom surface to a chip mounted on a chip carrier. The detach member is sized larger than the heat sink and can be easily removed from the top surface of the heat sink. Subsequently, a molding process is performed to form an encapsulant for completely encapsulating the chip, the heat sink and the detach member. Then, a singulation process is performed to cut along predetermined cutting lines located between sides of the heat sink and corresponding sides of the detach member. Finally, the detach member and a portion of the encapsulant formed on the detach member are removed from the heat sink. The above fabrication method reduces the packaging cost.
Abstract:
A sensor semiconductor device and a method for fabricating the same are proposed. A sensor chip is mounted on a substrate, and a dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the substrate and the sensor chip. The dielectric layer is formed with an opening for exposing a sensor region of the sensor chip. A light-penetrable lid covers the opening of the dielectric layer, such that light is able to penetrate the light-penetrable lid to reach the sensor region and activate the sensor chip. The sensor chip can be electrically connected to an external device via a plurality of solder balls implanted on a surface of the substrate not for mounting the sensor chip. Therefore, the sensor semiconductor device is fabricated in a cost-effective manner, and circuit cracking and a know good die (KGD) problem are prevented.
Abstract:
A method for fabricating semiconductor packages is proposed. A plurality of substrates are prepared each having a chip thereon. Length and width of each substrate are equal to predetermined length and width of the semiconductor package. A carrier having a plurality of openings is prepared. A protruded portion is formed at each corner of each opening, wherein a distance between two diagonal protruded portions is slightly larger than that between two diagonal corners of the substrate. The substrates are fixed in the openings of the carrier by means of the protruded portions, and gaps between the substrates and the carrier are sealed. An encapsulant is formed over each opening to encapsulate the corresponding chip by a molding process. An area on the carrier covered by the encapsulant is larger in length and width than the opening. A plurality of the semiconductor packages are formed after performing mold-releasing and singulation processes.
Abstract:
A heat dissipating semiconductor package and a fabrication method thereof are provided. A semiconductor chip is mounted on a chip carrier. A heat sink is mounted on the chip, and includes an insulating core layer, a thin metallic layer formed on each of an upper surface and a lower surface of the insulating core layer and a thermal via hole formed in the insulating core layer. A molding process is performed to encapsulate the chip and the heat sink with an encapsulant to form a package unit. A singulation process is performed to peripherally cut the package unit. A part of the encapsulant above the thin metallic layer on the upper surface of the heat sink is removed, such that the thin metallic layer on the upper surface of the heat sink is exposed, and heat generated by the chip can be dissipated through the heat sink.
Abstract:
A semiconductor package having conductive bumps on a chip and a fabrication method thereof are provided. A plurality of the conductive bumps are deposited respectively on bond pads of the chip. An encapsulation body encapsulates the chip and conductive bumps while exposing ends of the conductive bumps. A plurality of conductive traces are formed on the encapsulation body and electrically connected to the exposed ends of the conductive bumps. A solder mask layer is applied over the conductive traces and formed with openings for exposing predetermined portions of the conductive traces. The exposed portions of the conductive traces are connected to a plurality of solder balls respectively. The conductive bumps on the bond pads of the chip allow easy positional recognition of the bond pads, making the conductive traces well electrically connected to the bond pads through the conductive bumps and assuring the quality and reliability of the semiconductor package.
Abstract:
A semiconductor device having a flip-chip package and a method for fabricating the same are provided. A flip-chip package after being tested to be functionally workable is mounted on a carrier and is electrically connected to the carrier by a plurality of first conductive elements, the flip-chip package having a first chip mounted on a substrate in a flip-chip manner. At least a second chip is mounted on the flip-chip package and is electrically connected to the carrier by a plurality of second conductive elements. An encapsulant is formed on the carrier for encapsulating the flip-chip package and the second chip. A plurality of solder balls are implanted on a bottom surface of the carrier, such that the first and second chips can be electrically connected to an external device via the solder balls. The above arrangement can effectively improve the yield of a fabricated product and reduce packaging costs.
Abstract:
A lead-frame-based semiconductor package and a fabrication method thereof are proposed. The semiconductor package includes: a lead frame having a plurality of first and second leads, wherein each first lead is formed with an extending portion smaller in thickness than the first lead in a manner that, an upper surface of the extending portion is flush with an upper surface of the first lead, and a lower surface of the extending portion forms a height difference with respect to a lower surface of the first lead; a chip mounted over the upper surfaces of the extending portions, and electrically connected to the leads by bonding wires; an encapsulant for encapsulating the upper surfaces of leads, upper surfaces of extending portions, chip and bonding wires; and a non-conductive material applied over the lower surfaces of extending portions, wherein the lower surfaces of leads are exposed to outside of the non-conductive material.
Abstract:
A semiconductor package with build-up layers formed on a chip and a fabrication method of the semiconductor package are provided. A chip with a plurality of conductive bumps formed on bond pads thereof is received within a cavity of a carrier, and a dielectric layer encapsulates the conductive bumps whose ends are exposed. A plurality of conductive traces are formed on the dielectric layer and electrically connected to the ends of the conductive bumps. A solder mask layer is applied over the conductive traces and formed with openings via which predetermined portions of the conductive traces are exposed and bonded to a plurality of solder balls. Thereby, positions of the bond pads are easily recognized and distinguished by the exposed ends of the conductive bumps, making the conductive traces capable of being well electrically connected through the conductive bumps to the bond pads to improve yield of the fabricated packages.
Abstract:
A substrate and a fabrication method thereof are proposed, with at least a check point being formed on the substrate. Prior to wire bonding and/or molding processes, cleanness of the substrate (cleaned by plasma) is determined according to color variation of the check point, so as to allow only cleaned and contamination-free substrates to be subsequently formed with bonding wires and encapsulants thereon. Thereby, qualities of wire-bonded electrical connection and encapsulant adhesion for the substrate can be assured, which helps prevent the occurrence of delamination between the encapsulant and the substrate. Moreover, the check point formed on the substrate is made during general substrate fabrication by using current equipment and technique, and in a manner as not to interfere with trace routability on the substrate; thereby, costs and complexity of substrate fabrication would not undesirably increased.