Abstract:
In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive material is formed to bury the ridge structure. A cured resin portion and an uncured resin portion are formed in the resin layer by performing lithographic exposure of the resin layer, and the uncured resin portion is on the top of the ridge structure. The uncured resin portion is removed to form a dent which is provided on the top of the ridge structure. An overall surface of the cured resin portion and dent is etched to form an etched resin layer. An opening is formed in the etched resin layer by thinning the cured resin portion, and a part of the insulating film is exposed in the opening of the etched resin layer. The part of the insulating film is etched using the etched resin layer as a mask to form an opening in the insulating film. An electrode is formed over the ridge structure and the etched resin layer.
Abstract:
An IC card includes: a rectifying circuit; a register section in which a plurality of setpoints related to the output voltage of the rectifying circuit are set; a voltage level detecting circuit configured to detect the output voltage level of the rectifying circuit on the basis of the setpoints set in the register section; a plurality of transistors for load modulation to be made valid or invalid according to the output voltage level detected by the voltage level detecting circuit; and a control section configured to generate transmission data according to reception data received by a receiving section and supply the transmission data to the plurality of transistors for load modulation.
Abstract:
As a composite laser rod capable of satisfying the positional stability and output stability of a laser beam, a laser rod in which a laser active element is doped is intimately inserted into a hollow portion of a non-doped ceramic pipe that has a crystal structure the same as the laser rod followed by baking so as to remove a gap and strain at an interface between the laser rod and the ceramic pipe after the baking further followed by polishing a surface of the ceramic pipe to form a ceramic skin layer, and thereby a composite laser rod is formed. In the composite laser rod, an influence due to fluctuation in the cooling capacity of cooling water or a heat sink is averaged by a non-doped skin layer, temperature fluctuation of the laser rod is suppressed, and an influence of vibration from the cooling water or a cooling fan can be suppressed. When the refractive index of the laser rod is made higher than that of the ceramic pipe, a high efficiency oscillation can be realized, and furthermore when the thermal conductivity of the ceramic pipe is made higher than that of the laser rod, the thermal lens effect can be alleviated.
Abstract:
As a composite laser rod capable of satisfying the positional stability and output stability of a laser beam, a laser rod in which a laser active element is doped is intimately inserted into a hollow portion of a non-doped ceramic pipe that has a crystal structure the same as the laser rod followed by baking so as to remove a gap and strain at an interface between the laser rod and the ceramic pipe after the baking further followed by polishing a surface of the ceramic pipe to form a ceramic skin layer, and thereby a composite laser rod is formed. In the composite laser rod, an influence due to fluctuation in the cooling capacity of cooling water or a heat sink is averaged by a non-doped skin layer, temperature fluctuation of the laser rod is suppressed, and an influence of vibration from the cooling water or a cooling fan can be suppressed. When the refractive index of the laser rod is made higher than that of the ceramic pipe, a high efficiency oscillation can be realized, and furthermore when the thermal conductivity of the ceramic pipe is made higher than that of the laser rod, the thermal lens effect can be alleviated.
Abstract:
A processing control unit appropriately detects that a mobile communication terminal is moving at a high speed and changes criteria for reselection of a cell. When reselection of a cell occurs, the processing control unit searches a cell transition list (step S10), and determines whether or not a cell selected as a local station by the reselection of a cell has already been registered in the cell transition list (step S11). Upon determining that the cell is not registered, the processing control unit registers the cell selected as the local station in the cell transition list (step S12) and increments a variable N indicating the number of registered cells by one (step S13). Thereafter, when a predetermined measurement termination time elapses, the processing control unit determines whether or not the variable N has exceeded a predetermined threshold value and, upon determining that the variable N has exceeded the predetermined threshold value, considering that the mobile communication terminal is moving at a high speed, changes criteria for reselection of a cell from criteria for preferentially reselecting a cell with relatively narrow coverage to criteria for preferentially reselecting a cell with relatively wide coverage.
Abstract:
Novel indoloylguanidine derivatives shown by formula (1), wherein R1 represents one or more, the same or different substituent(s) which is selected from the group consisting of a hydrogen atom, an alkyl group, a substituted alkyl group, an alkenyl group, an alkynyl group, a cycloalkyl group, a halogen atom, nitro group, an acyl group, carboxyl group, an alkoxycarbonyl group, an aromatic group, and a group shown by formula: —OR3, —NR6R7, —SO2NR6R7 or —S(O)nR40; and R2 represents a hydrogen atom, an alkyl group, a substituted alkyl group, a cycloalkyl group, hydroxy group, an alkoxy group or a group shown by formula: —CH2R20; and which inhibit the Na+/H+ exchanger activity and are useful for the treatment and prevention of a disease caused by increased Na+/H+ exchanger activity, such as hypertension, arrhythmia, angina pectoris, cardiac hypertrophy, diabetes, disorders associated with ischemia or ischemic reperfusion, cerebro-ischemic disorders; or diseases caused by excessive cell proliferation.