公开(公告)号：US20170301721A1

公开(公告)日：2017-10-19

申请号：US15586498

申请日：2017-05-04

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US09723716B2

公开(公告)日：2017-08-01

申请号：US14038864

申请日：2013-09-27

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold

IPC: H05K7/10 ,  H05K1/11 ,  H05K1/03 ,  H05K1/09 ,  H05K3/10 ,  H01L23/31 ,  H01L23/00

CPC classification number: H05K1/111 ,  H01L23/3157 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/03464 ,  H01L2224/04042 ,  H01L2224/05006 ,  H01L2224/05007 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05547 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K1/03 ,  H05K1/09 ,  H05K3/10 ,  Y10T29/49155 ,  H01L2924/01015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: According to various embodiments, a contact pad structure may be provided, the contact pad structure may include: a dielectric layer structure; at least one contact pad being in physical contact with the dielectric layer structure; the at least one contact pad including a metal structure and a liner structure, wherein the liner structure is disposed between the metal structure of the at least one contact pad and the dielectric layer structure, and wherein a surface of the at least one contact pad is at least partially free from the liner structure, and a contact structure including an electrically conductive material; the contact structure completely covering at least the surface being at least partially free from the liner structure of the at least one contact pad, wherein the liner structure and the contact structure form a diffusion barrier for a material of the metal structure of the at least one contact pad.

公开(公告)号：US09263328B2

公开(公告)日：2016-02-16

申请号：US14530488

申请日：2014-10-31

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Heinrich Koerner ,  Wolfgang Dickenscheid

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/768 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the conductive layer and laterally extending beyond the sidewall of the conductive layer by a lateral overhang; and a conductive via in electrical contact with the conductive capping layer.

公开(公告)号：US20150206797A1

公开(公告)日：2015-07-23

申请号：US14673707

申请日：2015-03-30

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Heinrich Koerner ,  Wolfgang Dickenscheid

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/768 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the conductive layer and laterally extending beyond the sidewall of the conductive layer by a lateral overhang; and a conductive via in electrical contact with the conductive capping layer.

Abstract translation: 一个或多个实施例涉及一种半导体器件，其包括：包括侧壁的导电层; 导电覆盖层，其设置在所述导电层上并且横向延伸超过所述导电层的所述侧壁的横向突出端; 以及与导电覆盖层电接触的导电通孔。

公开(公告)号：US20150054175A1

公开(公告)日：2015-02-26

申请号：US14530488

申请日：2014-10-31

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Heinrich Koerner ,  Wolfgang Dickenscheid

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/768 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the conductive layer and laterally extending beyond the sidewall of the conductive layer by a lateral overhang; and a conductive via in electrical contact with the conductive capping layer.