Abstract:
A non-volatile memory device having memory elements with a channel length of, e.g., 45-55 nm or less, is fabricated using existing lithographic techniques. In one approach, patterns of first and second photomasks are transferred to the same photoresist layer. The first photomask can have openings with a given feature size F that are spaced apart by the feature size F, for instance. The second photomask has an opening which is sized to create a desired inter-select gate gap, such as 3 F or 5 F. A third photomask is used to provide protective portions in a second photoresist layer over the select gate structures. The final structure has memory elements of width F spaced apart by a distance F, and select gates of width 3 F spaced apart by 3 F or 5 F. In another approach, the patterns of three photomasks are transferred to respective photoresist layers to create an analogous final structure.
Abstract:
Emission gas recycling equipment includes a passage for recycling a part of an emission gas and a control valve for controlling an amount of the part of the emission gas. The control valve includes: a housing having a pipe portion; a butterfly valve accommodated in the pipe portion rotatable in a first direction and a second direction; a seal ring for sealing a clearance; and valve open/close operation means for stopping the butterfly valve at the valve full close position after the valve open/close operation means operates the butterfly valve to open and to close equal to or more than one cycle across the valve full close position at the time when the engine stops or after the engine stops.
Abstract:
Emission gas recycling equipment includes a passage for recycling a part of an emission gas and a control valve for controlling an amount of the part of the emission gas. The control valve includes: a housing having a pipe portion; a butterfly valve accommodated in the pipe portion rotatable in a first direction and a second direction; a seal ring for sealing a clearance; and valve open/close operation means for stopping the butterfly valve at the valve full close position after the valve open/close operation means operates the butterfly valve to open and to close equal to or more than one cycle across the valve full close position at the time when the engine stops or after the engine stops.
Abstract:
A resist pattern (5) is formed in a dimension of a limitation of an exposure resolution over a hard mask material film (4) over a work film (3). The material film (4) is processed using the resist pattern (5) as a mask. A hard mask pattern (6) is thereby formed. Thereby a resist pattern (7), over a non-selected region (6b), having an opening (7a) through which a selection region (6a) in the mask pattern is exposed is formed. Only the mask pattern (6a) exposed through the opening (7a) is slimmed by performing a selection etching, the work film (3) is etched by using the mask pattern (6). A work film pattern (8) is thereby formed, which include a wide pattern section (8a) of a dimension width of the limitation of the exposure resolution and a slimmed pattern section (8a) of a dimension that is not more than the limitation of the exposure resolution.
Abstract:
A first output voltage Vcc is obtained via a first switching element from an external power supply, and a second output voltage Vme via a second switching element cascade-connected to the first switching element. The first switching element has a base current continuously controlled by a first comparator/amplifier to maintain the voltage Vcc at a predetermined value. The second switching element has a base current continuously controlled by a second comparator/amplifier to maintain the voltage Vme at a predetermined value. A third switching element connected in parallel to the first switching element and controlled by a duty-factor control circuit makes a bypass power supply to maintain a current flowing through the first switching element not more than a predetermined value. Thus, a constant voltage control device obtaining two types of stabilized voltages from external power supply of large voltage variation can reduce power consumption and improve voltage control accuracy.
Abstract:
A verification method of an integrated circuit pattern includes extracting a pattern which is not greater than a preset pattern size, extracting a pattern edge as a target of lithography simulation from the extracted pattern, and performing the lithography simulation on the extracted pattern edge to verify the integrated circuit pattern.
Abstract:
A module component with a good shield effect and a low height including a circuit board having mounted thereon a mount device including an electronic part. The device is sealed with a sealing body having a metal film formed on the sealing body surface. A ground pattern is formed at the outer periphery of the principal surface of the circuit board. The metal film is conductively connected with the ground pattern.
Abstract:
A module includes a component, a circuit board having the component mounted thereon, a first grounding pattern formed on an outermost periphery of a surface portion of the circuit board; a first sealer provided on the circuit board and having a dimension projected on the circuit board, and a metal film covering the sealer and connected to the grounding pattern. The dimension of the first dealer is smaller than an outside dimension of the circuit board. The first sealer is made of first resin and sealing the component. The module has a low profile and is adequately shielded.
Abstract:
A method of fabricating a nonvolatile semiconductor memory including the steps of: sequentially forming a gate insulating layer and a first conductive layer of a floating gate on a semiconductor substrate; depositing an inter-gate insulating layer; forming an opening in a part of the inter-gate insulating layer; depositing a control gate electrode on the inter-gate insulating layer and an exposed portion of the first conductive layer by the opening; and forming the gate electrodes of the memory cell transistors and the gate electrodes of the select transistors by utilizing the etching processes of the control gate electrode, the inter-gate insulating layer and the first conductive layer, wherein the select transistors include at least a part of the exposed portion of the first conductive layer.
Abstract:
An image forming apparatus includes an image bearing member on which an electrostatic latent image is capable of being formed; a developer accommodating container for accommodating a developer for developing the electrostatic latent image; a detecting device for detecting a remaining amount of the developer in the developer accommodating container, wherein the detecting device detects the remaining amount during a period in which no image forming operation is performed; a developer feeding member for feeding and stirring the developer in the developer accommodating container, the developer stirring member being rotatable at a speed which is lower during detection of the remaining amount than when an image forming operation is performed, wherein the detecting device detects first, second and third developer remaining amounts in first, second and third remaining amount detecting periods, respectively, in the order named, and wherein an interval between the second detection period and the third detection period is changed on the basis of the first and second remaining amounts.