公开(公告)号：US09558767B2

公开(公告)日：2017-01-31

申请号：US14774987

申请日：2014-04-02

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Ye Du ,  Takao Furubayashi ,  Yukiko Takahashi ,  Kazuhiro Hono

IPC: G11B5/127 ,  G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  B82Y10/00 ,  G01R33/09 ,  G11B5/09

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/09 ,  G11B5/1278 ,  G11B5/39 ,  G11B5/3906 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.

Abstract translation: 本发明的CPPGMR元件具有形成在基板11上以将Heusler合金构造成（100）方向的取向层12，作为层叠在取向层12上的用于磁电阻测量的电极的下层13， 每个层叠在下层13上并由Heusler合金制成的下铁磁层14和上铁磁层16，夹在下铁磁层14和上铁磁层16之间的间隔层15和堆叠在其上的盖层17 用于表面保护的上铁磁层16。 这种方式使得可以廉价地提供使用具有铁磁金属/非磁性金属/铁磁性金属的三层结构的薄膜的电流 - 垂直于平面的巨磁阻效应（CPPGMR）的元件， 从而表现出优异的表现。

公开(公告)号：US09508373B2

公开(公告)日：2016-11-29

申请号：US14367348

申请日：2013-03-22

Applicant: National Institute for Materials Science

Inventor： Masamitsu Hayashi ,  Sinha Jaivardhan ,  Masaya Kodzuka ,  Tomoya Nakatani ,  Yukiko Takahashi ,  Takao Furubayashi ,  Seiji Mitani ,  Kazuhiro Hono

IPC: G11C11/16 ,  G11B5/66 ,  G11B5/65 ,  G11B5/64 ,  G11B5/73 ,  G11B5/851 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/30 ,  H01F10/32 ,  C23C14/06 ,  C23C14/34 ,  G01R33/00 ,  G11C11/14 ,  G01R33/09 ,  G01R33/12 ,  H01F10/00

CPC classification number: G11B5/656 ,  C23C14/024 ,  C23C14/0641 ,  C23C14/081 ,  C23C14/34 ,  C23C14/35 ,  G01R33/00 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/64 ,  G11B5/732 ,  G11B5/851 ,  G11C11/14 ,  G11C11/161 ,  H01F10/007 ,  H01F10/30 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。