公开(公告)号：US20220199720A1

公开(公告)日：2022-06-23

申请号：US17353640

申请日：2021-06-21

Applicant: Samsung Display Co., Ltd.

Inventor： Jaybum Kim ,  Myeongho Kim ,  Yeonhong Kim ,  Kyoungseok Son ,  Seungjun Lee ,  Seunghun Lee ,  Junhyung Lim

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

公开(公告)号：US20220140042A1

公开(公告)日：2022-05-05

申请号：US17332698

申请日：2021-05-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Eunhyun Kim ,  Eunhye Ko ,  Yeonhong Kim ,  Kyoungwon Lee ,  Sunhee Lee ,  Junhyung Lim

IPC: H01L27/32

Abstract: A display apparatus in which an area of a peripheral area may be reduced while having a simple structure, the display apparatus includes a substrate, a bottom metal layer on the substrate and including a first extension line extending from the peripheral area outside a display area into the display area, a semiconductor layer on the bottom metal layer, a gate layer on the semiconductor layer, a first metal layer on the gate layer, and a second metal layer on the first metal layer and including a first data line extending from the peripheral area into the display area and electrically coupled to the first extension line in the peripheral area.

公开(公告)号：US10854837B2

公开(公告)日：2020-12-01

申请号：US16911525

申请日：2020-06-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: H01L51/52 ,  G09G3/32 ,  H01L51/00 ,  H01L27/11 ,  H01L27/32 ,  G09G3/3233

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US10541336B2

公开(公告)日：2020-01-21

申请号：US15724600

申请日：2017-10-04

Applicant: Samsung Display Co., Ltd.

Inventor： Junhyung Lim ,  Jaybum Kim ,  Kyoungseok Son ,  Jihun Lim

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/322 ,  H01L51/52 ,  H01L29/423 ,  H01L27/32 ,  H01L29/04 ,  H01L27/12

Abstract: A semiconductor device may include a base substrate, a first thin-film transistor (“TFT”) provided on the base substrate, a second TFT provided on the base substrate, and a plurality of insulating layers provided on the base substrate to define at least one dummy hole that is not overlapped with the first and second TFTs. The first TFT may include a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor material, and the second TFT may include a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor material. A shortest distance between the at least one dummy hole and the second semiconductor pattern may be equal to or shorter than 5 micrometers (μm), in a plan view.

公开(公告)号：US10361260B2

公开(公告)日：2019-07-23

申请号：US15684452

申请日：2017-08-23

Applicant: Samsung Display Co., Ltd.

Inventor： Jaybum Kim ,  Kyoungseok Son ,  Jihun Lim ,  Eoksu Kim ,  Junhyung Lim

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3225 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/786

Abstract: A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.

公开(公告)号：US12262598B2

公开(公告)日：2025-03-25

申请号：US18378656

申请日：2023-10-11

Applicant: Samsung Display Co., Ltd.

Inventor： Jaybum Kim ,  Myeongho Kim ,  Yeonhong Kim ,  Kyoungseok Son ,  Seungjun Lee ,  Seunghun Lee ,  Junhyung Lim

IPC: H10K59/124 ,  H01L27/12 ,  H10K59/121 ,  H10K71/00 ,  H01L25/16 ,  H01L25/18 ,  H10K59/12 ,  H10K59/65

Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

公开(公告)号：US12225794B2

公开(公告)日：2025-02-11

申请号：US18373277

申请日：2023-09-27

Applicant: Samsung Display Co., Ltd.

Inventor： Soyoung Koo ,  Eoksu Kim ,  Hyungjun Kim ,  Yunyong Nam ,  Junhyung Lim ,  Kyungjin Jeon

IPC: H10K59/131 ,  G09G3/3266 ,  G09G3/3291 ,  H10K59/122 ,  H10K59/12

Abstract: A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.

公开(公告)号：US11575100B2

公开(公告)日：2023-02-07

申请号：US17082459

申请日：2020-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/11 ,  G09G3/32 ,  G09G3/3233 ,  H01L27/32

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US11430847B2

公开(公告)日：2022-08-30

申请号：US16820102

申请日：2020-03-16

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Kyoungseok Son ,  Jaybum Kim ,  Eoksu Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L27/32 ,  H01L21/02 ,  H01L21/4757 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L49/02 ,  H01L29/24

Abstract: A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.

公开(公告)号：US11289588B2

公开(公告)日：2022-03-29

申请号：US16824339

申请日：2020-03-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/146 ,  H01L29/04 ,  H01L27/12

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern includes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.