公开(公告)号：US20220173099A1

公开(公告)日：2022-06-02

申请号：US17491841

申请日：2021-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook KIM ,  Seunggeol NAM ,  Taehwan MOON ,  Kwanghee LEE ,  Jinseong HEO ,  Hagyoul BAE ,  Yunseong LEE

IPC: H01L27/092 ,  H01L27/11 ,  H01L29/24 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786

Abstract: Provided is a semiconductor device including a first semiconductor transistor including a semiconductor channel layer, and a metal-oxide semiconductor channel layer, and having a structure in which a second semiconductor transistor is stacked on the top of the first semiconductor transistor. A gate stack of the second semiconductor transistor and the top of a gate stack of the first semiconductor transistor may overlap by greater than or equal to 90%. The first semiconductor transistor and the second semiconductor transistor may have a similar level of operation characteristics.

公开(公告)号：US20220140148A1

公开(公告)日：2022-05-05

申请号：US17515984

申请日：2021-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggeol NAM ,  Jinseong HEO ,  Sangwook KIM ,  Hagyoul BAE ,  Taehwan MOON ,  Yunseong LEE

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/51

Abstract: Provided is a ferroelectric semiconductor device including a source and a drain having different polarities. The ferroelectric semiconductor may include a ferroelectric including zirconium oxide (ZrO2), hafnium oxide (HfO2), and/or hafnium-zirconium oxide (HfxZr1−xO, 0

公开(公告)号：US20210359101A1

公开(公告)日：2021-11-18

申请号：US17244175

申请日：2021-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Taehwan MOON ,  Seunggeol NAM ,  Sanghyun JO

IPC: H01L29/51 ,  H01L27/11507 ,  H01L49/02 ,  H01L21/28 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.

公开(公告)号：US20190148493A1

公开(公告)日：2019-05-16

申请号：US16248945

申请日：2019-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Haeryong KIM ,  Hyeonjin SHIN ,  Seunggeol NAM ,  Seongjun PARK

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/45 ,  H01L21/285 ,  H01L29/04 ,  H01L29/267

CPC classification number: H01L29/0847 ,  H01L21/28512 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US20160343805A1

公开(公告)日：2016-11-24

申请号：US15010807

申请日：2016-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Haeryong KIM ,  Hyeonjin SHIN ,  Seunggeol NAM ,  Seongjun PARK

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/04 ,  H01L29/165 ,  H01L29/78 ,  H01L29/267

CPC classification number: H01L29/0847 ,  H01L21/28512 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

Abstract translation: 半导体器件包括半导体层，与半导体层电接触的金属层和半导体层与金属层之间的二维材料层并具有二维晶体结构。

公开(公告)号：US20250142835A1

公开(公告)日：2025-05-01

申请号：US18927200

申请日：2024-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong LEE ,  Sijung YOO ,  Seunggeol NAM ,  Kihong KIM ,  Yoonsang PARK ,  Sanghyun JO

IPC: H10B51/30 ,  H10B51/20

Abstract: A semiconductor device, a memory device, and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes a semiconductor substrate, a ferroelectric layer provided on the semiconductor substrate, an aluminum oxide layer provided on the ferroelectric layer, and a gate electrode provided on the aluminum oxide layer, wherein the aluminum oxide layer includes aluminum, oxygen, and hydrogen, and wherein a content of oxygen in the aluminum oxide layer is more than about 1.5 times and about 2 times or less a content of aluminum in the aluminum oxide layer.

公开(公告)号：US20250056844A1

公开(公告)日：2025-02-13

申请号：US18761631

申请日：2024-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae LEE ,  Seunggeol NAM ,  Sijung YOO ,  Dukhyun CHOE

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/51 ,  H10B51/30

Abstract: Provided is a ferroelectric field effect transistor including a source region, a drain region, a channel provided between the source region and the drain region, a ferroelectric layer provided on the channel and including a ferroelectric material including an oxide of a first element, a gate-interposed layer provided on the ferroelectric layer and including a paraelectric material including an oxide of a second element different from the first element, and a gate electrode provided on the gate-interposed layer, wherein the gate-interposed layer includes a first interposed layer adjacent to the ferroelectric layer, and a second interposed layer adjacent to the gate electrode, the first interposed layer includes a mixture of the first element and the second element, and a ratio of the first element in the first interposed layer may be greater than a ratio of the first element in the ferroelectric layer.

公开(公告)号：US20240244848A1

公开(公告)日：2024-07-18

申请号：US18412793

申请日：2024-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae LEE ,  Jinseong HEO ,  Seunggeol NAM ,  Yunseong LEE ,  Dukhyun CHOE

IPC: H10B51/30 ,  H10B51/20

CPC classification number: H10B51/30 ,  H10B51/20

Abstract: Provided is a semiconductor device including a ferroelectric layer. The semiconductor device includes a channel layer including an n-type oxide semiconductor layer and a p-type oxide semiconductor layer, a ferroelectric layer disposed on the channel layer, a gate electrode disposed on the ferroelectric layer, and a reduced layer disposed on the channel layer and including an element having greater reducing power than a metal included in the channel layer.

公开(公告)号：US20240081080A1

公开(公告)日：2024-03-07

申请号：US18461266

申请日：2023-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae LEE ,  Jinseong HEO ,  Seunggeol NAM ,  Yunseong LEE ,  Dukhyun CHOE

IPC: H10B51/20

CPC classification number: H10B51/20

Abstract: A semiconductor device including a substrate, an interfacial layer on the substrate, a ferroelectric layer on the interfacial layer, a gate on the ferroelectric layer, and the nitride protective layer between the interfacial layer and the gate and being adjacent to the ferroelectric layer.

公开(公告)号：US20230272554A1

公开(公告)日：2023-08-31

申请号：US18298692

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Changseok LEE ,  Hyeonsuk SHIN ,  Hyeonjin SHIN ,  Seokmo HONG ,  Minhyun LEE ,  Seunggeol NAM ,  Kyungyeol MA

IPC: C30B29/38 ,  H01L21/02

CPC classification number: C30B29/38 ,  H01L21/02172 ,  H01L21/02252 ,  H01L21/02293

Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.