Abstract:
Provided are polypropylene-based films and sheets having good ultraviolet shieldability. While being stored, the films and the sheets are free from additive bleeding, and their outward appearance is kept all the time good. The films and the sheets are formed from a compositions comprising 100 parts by weight of a polypropylene-based resin and from 0.01 to 5 parts by weight of one or more compounds selected from the following (A) to (D): (A) 2-(2-hydroxy-5-t-octylphenyl)benzotriazole, (B) 2-(2H-benzotriazol-2-yl)-6-dodecyl-4-methylphenol, (C) specific triazine compounds, and (D) specific methylene-bisphenols.
Abstract:
An image forming apparatus includes a recording material supporting member for supporting and transporting a recording material, an image forming device for forming an image on the recording material supported by the recording material supporting member, and a polishing device, having polishing particles provided on the surface thereof and a holding portion for holding the polishing particles, for polishing the recording material supporting member.
Abstract:
The present invention provides an image forming apparatus comprising an image bearing member, and a recording material bearing member for bearing a recording material to convey the recording material to a transfer station where an image is transferred from the image bearing member onto the recording material borne on the recording material bearing member. The recording material bearing member is capable of bearing a plurality of recording materials simultaneously at different positions thereon. The images can be successively transferred onto first and second surfaces of each recording material, and, when images are formed on the second surfaces of the plurality of recording materials, during a time period in which an area of the recording material bearing member with which the first surface of the recording material was previously contacted is passing through at least the transfer position without bearing the recording material, a spacer particle layer is formed between the image bearing member and the area.
Abstract:
An image forming apparatus includes an image carrier for carrying an image, and a transfer medium bearing member for bearing and conveying a transfer medium to a transfer unit of said image carrier. The transfer medium bearing member is able to bear multiple transfer media concurrently. The apparatus includes transfer device for transferring the image of the image carrier onto the transfer medium borne on the transfer medium bearing member in the transfer unit, and a plurality of transfer media capable of being borne on the transfer medium bearing member concurrently, wherein in consecutively transferring the image onto the transfer media of the number not divisible by the maximum sheet bearing number by which said transfer medium bearing member is capable of bearing the transfer media concurrently. The number of transfer media that the transfer medium bearing member concurrently bears at the n-th time where n is a natural number equal to or greater than two, is not less than the number of transfer media that it bears concurrently at the n-1-th time. In transferring the image consecutively as above, the number of sheets that the transfer medium bearing member concurrently bears at the final time is greater than the number of transfer media that the transfer medium bearing member concurrently bears at the first time.
Abstract:
[Object] To provide a polypropylene resin composition for use in the formation of a microporous membrane having excellent heat resistance and strength.[Solution] A polypropylene resin composition for use in the formation of a microporous membrane according to the present invention comprises as an essential component an ultra-high-molecular-weight propylene homopolymer (A) that satisfies the following requirements (1) to (4): (1) the intrinsic viscosity [η] is 7 dl/g or more and less than 25 dl/g; (2) the mesopentad fraction ranges from 90.0% to 99.5%; (3) the melting point ranges from 153° C. to 167° C.; and (4) in an elution temperature-elution volume curve measured by temperature-rising elution fractionation (TREF), the maximum peak has a peak top temperature in the range of 116° C. to 125° C. and a half-width of 7.0° C. or less.
Abstract:
[Object] To provide a polypropylene resin composition for use in the formation of a microporous membrane having excellent heat resistance and low thermal shrinkage ratio.[Solution] A polypropylene resin composition for use in the formation of a microporous membrane according to the present invention comprises as an essential component a propylene homopolymer (A) that satisfies the following requirements (1) to (4) and (7): (1) the intrinsic viscosity [η] is 1 dl/g or more and less than 7 dl/g; (2) the mesopentad fraction ranges from 94.0% to 99.5%; (3) the integral elution volume during heating to 100° C. is 10% or less; (4) the melting point ranges from 153° C. to 167° C.; and (7) in an elution temperature-elution volume curve, the maximum peak has a peak top temperature in the range of 105° C. to 130° C. and a half-width of 7.0° C. or less.
Abstract:
In a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer and a current blocking layer having an opening for confining a current flowing to the active layer, a regrown layer made of a nitride semiconductor doped with a p-type impurity is formed on the current blocking layer so as to cover the opening of the current blocking layer, and a portion of the regrown layer buried in the opening disposed to be adjacent to a side face of the opening and having a given width W is changed to have the n-type conductivity. Accordingly, the opening of the current blocking layer is effectively narrowed, so as to realize a self-pulsation nitride semiconductor laser device.
Abstract:
A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.
Abstract:
A production method of a decorative film comprises a first step of laying a base film of a thermoplastic resin on a pattern layer of a transfer sheet in which the pattern layer is placed on one surface of a carrier film, thermally transferring the pattern layer onto the base film, and thereafter stripping off the carrier film, thereby obtaining a laminate sheet in which the pattern layer is placed on one surface of the base film; and a second step of, in a state in which a transparent resin film is laid on a surface of the laminate sheet on the pattern layer side, inserting the laminate sheet and the transparent resin film into between a pair of endless belts placed opposite each other, and conveying the laminate sheet and the transparent resin film under heat and pressure, thereby obtaining a decorative film in which a transparent resin layer of the transparent resin film is placed on the surface of the laminate sheet on the pattern layer side.
Abstract:
A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.