公开(公告)号：US20220189946A1

公开(公告)日：2022-06-16

申请号：US17687380

申请日：2022-03-04

Applicant: Texas Instruments Incorporated

Inventor： Akram A. Salman ,  Farzan Farbiz ,  Amitava Chatterjee ,  Xiaoju Wu

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/10

Abstract: A semiconductor controlled rectifier (FIG. 4A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region. A fourth lightly doped region (400) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region and electrically connected to the second and third lightly doped regions.

公开(公告)号：US11302688B2

公开(公告)日：2022-04-12

申请号：US16054037

申请日：2018-08-03

Applicant: Texas Instruments Incorporated

Inventor： Akram A. Salman ,  Farzan Farbiz ,  Amitava Chatterjee ,  Xiaoju Wu

IPC: H01L27/02 ,  H01L29/73 ,  H01L29/74 ,  H01L29/10

Abstract: A semiconductor controlled rectifier (FIG. 4A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region. A fourth lightly doped region (400) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region and electrically connected to the second and third lightly doped regions.

公开(公告)号：US11049852B2

公开(公告)日：2021-06-29

申请号：US16053985

申请日：2018-08-03

Applicant: Texas Instruments Incorporated

Inventor： Akram A. Salman ,  Farzan Farbiz ,  Amitava Chatterjee ,  Xiaoju Wu

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/74

Abstract: A semiconductor controlled rectifier (FIG. 4A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region. A fourth lightly doped region (400) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region and electrically connected to the second and third lightly doped regions.

公开(公告)号：US20200013890A1

公开(公告)日：2020-01-09

申请号：US16574394

申请日：2019-09-18

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann Edwards ,  James Robert Todd ,  Binghua Hu ,  Xiaoju Wu ,  Stephanie L. Hilbun

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/10

Abstract: Described examples include integrated circuits, drain extended transistors and fabrication methods therefor, including a multi-fingered transistor structure formed in an active region of a semiconductor substrate, in which a transistor drain finger is centered in a multi-finger transistor structure, a transistor body region laterally surrounds the transistor, an outer drift region laterally surrounds an active region of the semiconductor substrate, and one or more inactive or dummy structures are formed at lateral ends of the transistor finger structures.

公开(公告)号：US20200006550A1

公开(公告)日：2020-01-02

申请号：US16021647

申请日：2018-06-28

Applicant: Texas Instruments Incorporated

Inventor： James Robert Todd ,  Xiaoju Wu ,  Henry Litzmann Edwards ,  Binghua Hu

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L29/66 ,  H01L21/285 ,  H01L29/417

Abstract: Described examples include integrated circuits, drain extended transistors and fabrication methods in which a silicide block material or other protection layer is formed on a field oxide structure above a drift region to protect the field oxide structure from damage during deglaze processing. Further described examples include a shallow trench isolation (STI) structure that laterally surrounds an active region of a semiconductor substrate, where the STI structure is laterally spaced from the oxide structure, and is formed under gate contacts of the transistor.

公开(公告)号：US20200006549A1

公开(公告)日：2020-01-02

申请号：US16021601

申请日：2018-06-28

Applicant: Texas Instruments Incorporated

Inventor： Alexei Sadovnikov ,  Andrew Derek Strachan ,  Henry Litzmann Edwards ,  Dhanoop Varghese ,  Xiaoju Wu ,  Binghua Hu ,  James Robert Todd

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08 ,  H01L21/266 ,  H01L21/265

Abstract: Described examples include integrated circuits, drain extended transistors and fabrication methods in which an oxide structure is formed over a drift region of a semiconductor substrate, and a shallow implantation process is performed using a first mask that exposes the oxide structure and a first portion of the semiconductor substrate to form a first drift region portion for connection to a body implant region. A second drift region portion is implanted in the semiconductor substrate under the oxide structure by a second implantation process using the first mask at a higher implant energy.

公开(公告)号：US10090299B2

公开(公告)日：2018-10-02

申请号：US15865321

申请日：2018-01-09

Applicant: Texas Instruments Incorporated

Inventor： Xiaoju Wu ,  C. Matthew Thompson

IPC: H01L27/088 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10

Abstract: An integrated circuit with transistor regions formed on a substrate. Each transistor region includes a channel region and a terminal region. The channel region is positioned along a traverse dimension, and it includes a channel edge region along a longitudinal dimension. The terminal region is positioned adjacent to the channel region, and it is doped with a first dopant of a first conductivity type. Each transistor region may include an edge block region, which is positioned along the longitudinal dimension and adjacent to the channel edge region. The edge block region is doped with a second dopant of a second conductivity type opposite to the first conductivity type. The channel region doped with a dopant and having a first doping concentration. Each transistor region may include an edge recovery region overlapping with the channel edge region and having a second doping concentration higher than the first doping concentration.

公开(公告)号：US09099523B2

公开(公告)日：2015-08-04

申请号：US13668022

申请日：2012-11-02

Applicant: Texas Instruments Incorporated

Inventor： Akram A. Salman ,  Farzan Farbiz ,  Amitava Chatterjee ,  Xiaoju Wu

IPC: H01L29/74 ,  H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/1012 ,  H01L29/7424 ,  H01L29/7436

Abstract: A semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the buried layer. A fourth lightly doped region (400) having the second conductivity type is formed between the second lightly doped region and the buried layer.

Abstract translation: 半导体可控整流器包括具有第一导电类型（N）的第一轻掺杂区域（100）和在第一轻掺杂区域内形成的具有第二导电类型（P）的第一重掺杂区域（108）。 具有第二导电类型的第二轻掺杂区域（104）形成在第一轻掺杂区域附近。 在第二轻掺杂区域内形成具有第一导电类型的第二重掺杂区域（114）。 具有第一导电类型的掩埋层（101）形成在第二轻掺杂区域的下方并且电连接到第一轻掺杂区域。 在第二轻掺杂区域和掩埋层之间形成具有第二导电类型的第三轻掺杂区域（102）。 在第二轻掺杂区域和掩埋层之间形成具有第二导电类型的第四轻掺杂区域（400）。