公开(公告)号：US20200294787A1

公开(公告)日：2020-09-17

申请号：US16890216

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34 ,  C23C16/04

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US20190292662A1

公开(公告)日：2019-09-26

申请号：US16363488

申请日：2019-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Jun OGAWA ,  Noriaki FUKIAGE ,  Hiroaki IKEGAWA ,  Yasuo KOBAYASHI ,  Takeshi OYAMA

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/44 ,  C23C16/50

Abstract: A film-forming method includes: mounting a substrate on a mounting table in a vacuu container; adsorbing a raw material to the substrate by supplying raw material gas containing silicon into the vacuum container; nitriding the raw material by supplying nitriding gas to a plasma formation region inside the vacuum container and supplying plasmarized gas to the substrate; forming a silicon-containing nitride film on the substrate by alternately and repeatedly performing the adsorbing a raw material and the nitriding the raw material; setting stress of the silicon-containing nitride film before the adsorbing a raw material and nitriding the raw material; and adjusting a nitriding time having a length based on first correspondence relationship between the stress of the silicon-containing nitride film and parameter corresponding to the nitriding time in the plasma formation region, and the set stress of the silicon-containing nitride film.

公开(公告)号：US20190096658A1

公开(公告)日：2019-03-28

申请号：US16202745

申请日：2018-11-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/033 ,  C23C16/02 ,  C23C16/40 ,  H01L21/3213 ,  G03F7/40 ,  H01L21/311 ,  C23C16/455 ,  H01L21/768

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20180358235A1

公开(公告)日：2018-12-13

申请号：US16002081

申请日：2018-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Jun OGAWA ,  Noriaki FUKIAGE ,  Hiroaki IKEGAWA ,  Yasuo KOBAYASHI ,  Takeshi OYAMA

IPC: H01L21/3213 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/32139 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/334 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/32136

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

公开(公告)号：US20170278698A1

公开(公告)日：2017-09-28

申请号：US15465144

申请日：2017-03-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki IKEGAWA ,  Jun OGAWA

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/34 ,  C23C16/52 ,  C23C16/56 ,  H01L21/311 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/0236 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67745 ,  H01L21/68771

Abstract: A semiconductor device manufacturing method includes: a primary process of supplying a process gas to a substrate having a depression formed therein to form a third layer and filling the depression with the third layer, the substrate including a first layer whose surface is exposed as an upper surface of the substrate and a second layer formed in at least a sidewall of the depression having the sidewall and a floor surface; performing an etching process of etching the third layer to expose the upper surface, and halting the etching of the third layer while remaining the third layer formed within the depression; and performing a secondary process of supplying the process gas to the substrate to form the third layer so that the depression is filled with the third layer with no clearance.

公开(公告)号：US20170271143A1

公开(公告)日：2017-09-21

申请号：US15459441

申请日：2017-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US20170186606A1

公开(公告)日：2017-06-29

申请号：US15379526

申请日：2016-12-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Akihiro KURIBAYASHI ,  Jun OGAWA

IPC: H01L21/02 ,  H01L21/687 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34

CPC classification number: H01L21/02274 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45563 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film forming method for forming a silicon nitride film on a substrate within a vacuum container includes a first process of supplying a gas of a silicon raw material to the substrate to cause the silicon raw material gas to be adsorbed onto the substrate, a second process of subsequently supplying an ammonia gas to the substrate in a non-plasma-converted state to cause the ammonia gas to be physically adsorbed onto the substrate, a third process of subsequently forming a reaction product layer by supplying active species obtained by plasma-converting a plasma-forming gas for forming plasma to the substrate, thereby causing ammonia physically adsorbed onto the substrate to react with the silicon raw material, and forming the silicon nitride film by depositing the reaction product layer by repeating multiple times a cycle including the first process, the second process and the third process.

公开(公告)号：US20140179121A1

公开(公告)日：2014-06-26

申请号：US14108663

申请日：2013-12-17

Applicant: Tokyo Electron Limited

Inventor： Hiroaki IKEGAWA ,  Masahiko KAMINISHI ,  Kosuke TAKAHASHI ,  Masato KOAKUTSU ,  Jun OGAWA

IPC: H01L21/02 ,  H01L21/687

CPC classification number: H01L21/0228 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/68764 ,  H01L21/68771

Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

Abstract translation: 一种使用包括转台安装基板的设备在基板上沉积薄膜的方法，设置有气体供应部分的转盘上表面上方的第一和第二处理区域，在第一和第二处理区域之间的分离气体供应部分和 分离区域，包括通过旋转转盘第一匝来沉积第一氧化物膜，同时供应第一反应气体，来自第二气体供应部分的氧化气体和分离气体; 在从第一气体供给部分和分离气体供应部分供应分离气体的同时旋转至少一圈，并且来自第二气体供应部分的氧化气体; 并且至少第二匝旋转以沉积第二氧化物膜，同时从第一气体供应部分提供第二反应气体，来自第二气体供应部分的氧化气体和分离气体。