Method of achieving CD linearity control for full-chip CPL manufacturing

    公开(公告)号:US20070148562A1

    公开(公告)日:2007-06-28

    申请号:US11708029

    申请日:2007-02-20

    CPC classification number: G03F1/36 G03F1/34

    Abstract: A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.

    Feature optimization using enhanced interference mapping lithography
    32.
    发明授权
    Feature optimization using enhanced interference mapping lithography 有权
    使用增强干涉映射光刻技术的特征优化

    公开(公告)号:US07231629B2

    公开(公告)日:2007-06-12

    申请号:US10976306

    申请日:2004-10-29

    Applicant: Thomas Laidig

    Inventor: Thomas Laidig

    CPC classification number: G03F1/36

    Abstract: Disclosed concepts include a method of, and program product for, optimizing an intensity profile of a pattern to be formed in a surface of a substrate relative to a given mask using an optical system. Steps include mathematically representing resolvable feature(s) from the given mask, generating a mathematical expression, an eigenfunction, representing certain characteristics of the optical system, modifying the mathematical the eigenfunction by filtering, generating an interference map in accordance with the filtered eigenfunction and the mathematical expression of the given mask, and determining assist features for the given mask based on the interference map. As a result, undesired printing in the surface of the substrate may be minimized.

    Abstract translation: 公开的概念包括使用光学系统优化相对于给定掩模在衬底表面中形成的图案的强度分布的方法和程序产品。 步骤包括在数学上表示来自给定掩模的可解析特征,产生表示光学系统的某些特性的数学表达式,本征函数,通过滤波修改数学本征函数,根据滤波后的特征函数产生干涉图, 给定掩模的数学表达式,以及基于干涉图确定给定掩模的辅助特征。 结果,可以使衬底表面中不期望的印刷最小化。

    Automatic optical proximity correction (OPC) rule generation
    33.
    发明授权
    Automatic optical proximity correction (OPC) rule generation 有权
    自动光学邻近校正(OPC)规则生成

    公开(公告)号:US07124395B2

    公开(公告)日:2006-10-17

    申请号:US10626864

    申请日:2003-07-25

    CPC classification number: G03F7/70441 G03F1/36

    Abstract: A method of automatically applying optical proximity correction techniques to a reticle design containing a plurality of features. The method comprises the steps of: (1) generating a first set of rules for applying scatter bar assist features to the plurality of features for a given illumination setting; (2) generating a second set of rules for applying biasing to the plurality of features for said given illumination setting; (3) forming a look-up table containing the first set of rules and the second set of rules; and (4) analyzing each of the plurality of features with the first set of rules and the second set of rules contained in the look-up table to determine if either the first set of rules or the second set of rules is applicable to a given feature. If either the first set of rules or the second set of rules is applicable to the given feature, the given feature is modified in accordance with the applicable rule.

    Abstract translation: 一种将光学邻近校正技术自动应用于包含多个特征的掩模版设计的方法。 该方法包括以下步骤:(1)产生第一组规则,用于在给定的照明设置下将散射条辅助特征应用于多个特征; (2)产生用于对所述给定照明设置对所述多个特征施加偏压的第二组规则; (3)形成包含第一组规则和第二组规则的查找表; 以及(4)利用第一组规则和包含在查找表中的第二组规则来分析多个特征中的每一个,以确定第一组规则或第二组规则是否适用于给定的 特征。 如果第一组规则或第二组规则适用于给定特征,则给定特征根据适用规则进行修改。

    Method and apparatus for providing lens aberration compensation by illumination source optimization
    34.
    发明授权
    Method and apparatus for providing lens aberration compensation by illumination source optimization 有权
    通过照明光源优化提供透镜像差补偿的方法和装置

    公开(公告)号:US07034919B2

    公开(公告)日:2006-04-25

    申请号:US10705234

    申请日:2003-11-12

    Applicant: Armin Liebchen

    Inventor: Armin Liebchen

    CPC classification number: G03F7/705 G03F7/70125

    Abstract: A method for compensating for lens aberrations, which includes the steps of: (a) defining a cost metric which quantifies an imaging performance of an imaging system, where the cost metric reflects the effects of lens aberrations on the imaging performance; (b) defining a source illumination profile; (c) evaluating the cost metric based on the source illumination profile; (d) modifying the source illumination profile, and re-evaluating the cost metric based on the modified source illumination profile; and (e) repeating step (d) until the cost metric is minimized. The source illumination profile corresponding to the minimized cost metric represents the optimal illumination for the imaging device.

    Abstract translation: 一种用于补偿透镜像差的方法,其包括以下步骤:(a)定义量化成像系统的成像性能的成本度量,其中成本度量反映透镜像差对成像性能的影响; (b)定义源照明轮廓; (c)基于源照明曲线评估成本度量; (d)修改源照明轮廓,以及基于修改的源照明轮廓重新评估成本度量; 和(e)重复步骤(d),直到成本度量最小化为止。 对应于最小化成本度量的源照明轮廓表示成像装置的最佳照明。

    Method and apparatus for defining mask patterns utilizing a spatial frequency doubling technique
    35.
    发明授权
    Method and apparatus for defining mask patterns utilizing a spatial frequency doubling technique 有权
    利用空间倍频技术定义掩模图案的方法和装置

    公开(公告)号:US06920628B2

    公开(公告)日:2005-07-19

    申请号:US10395887

    申请日:2003-03-25

    CPC classification number: G03F1/29 G03F1/34

    Abstract: A method of generating a mask for use in printing a target pattern on a substrate. The method includes the steps of: (a) determining a target pattern representing a circuit design to be printed on a substrate; (b) generating a first pattern by scaling the target pattern by a factor of 0.5; and (c) generating a second pattern by performing a Boolean operation which combines the target pattern and the first pattern. The second pattern is then utilized to print the target pattern on the substrate.

    Abstract translation: 一种生成用于在基板上印刷目标图案的掩模的方法。 该方法包括以下步骤:(a)确定表示要印刷在基板上的电路设计的目标图案; (b)通过将目标图案缩放0.5倍来产生第一图案; 和(c)通过执行组合目标图案和第一图案的布尔运算来产生第二图案。 然后利用第二图案在基板上印刷目标图案。

    Method and apparatus for performing rule-based gate shrink utilizing dipole illumination
    36.
    发明授权
    Method and apparatus for performing rule-based gate shrink utilizing dipole illumination 有权
    用偶极子照明执行基于规则的门收缩的方法和装置

    公开(公告)号:US06915505B2

    公开(公告)日:2005-07-05

    申请号:US10395888

    申请日:2003-03-25

    CPC classification number: G03F7/701 G03F1/36 G03F1/70 G03F7/70425 G03F7/70433

    Abstract: A method of printing a gate pattern on a substrate comprising the steps of: identifying at least one area in the pattern in which one of the gate features overlays one of the active regions; reducing a width dimension of the one of the gate features at the location which the one of the gate features overlays the one of the active regions; extracting the gate features from the pattern; decomposing the gate features into a vertical component mask and a horizontal component mask; and illuminating the vertical component mask and the horizontal component mask utilizing dipole illumination.

    Abstract translation: 一种在衬底上印刷栅极图案的方法,包括以下步骤:识别图案中的至少一个区域,其中一个栅极特征覆盖有源区域中的一个; 减小所述栅极特征之一的位置处的所述栅极特征之一的宽度尺寸覆盖所述有效区域中的一个; 从图案中提取门特征; 将门特征分解为垂直分量掩模和水平分量掩模; 并利用偶极照明照亮垂直分量掩模和水平分量掩模。

    Method and apparatus for performing model-based OPC for pattern decomposed features
    38.
    发明授权
    Method and apparatus for performing model-based OPC for pattern decomposed features 失效
    用于模式分解特征执行基于模型的OPC的方法和装置

    公开(公告)号:US08644589B2

    公开(公告)日:2014-02-04

    申请号:US13786249

    申请日:2013-03-05

    CPC classification number: G06T7/0004 G03F1/36 G03F1/70 G03F7/70466 G03F7/70475

    Abstract: A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.

    Abstract translation: 一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。 该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差,以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

    Method for performing pattern decomposition based on feature pitch
    39.
    发明授权
    Method for performing pattern decomposition based on feature pitch 失效
    基于特征间距进行图案分解的方法

    公开(公告)号:US08615126B2

    公开(公告)日:2013-12-24

    申请号:US13170126

    申请日:2011-06-27

    Applicant: Jung Chul Park

    Inventor: Jung Chul Park

    CPC classification number: G03F1/70

    Abstract: The present invention discloses a method for decomposing a target pattern containing features to be printed on a wafer, into multiple patterns, the features having a plurality of patterns within a minimum pitch for processes utilized to image the target pattern. The method includes superposing a predefined kernel over a pixel, and moving the kernel from one pixel to another, the pixels representing the sub-patterns of the target pattern. Polarity of the kernel may be reversed when the pixel has a stored intensity value that is negative.

    Abstract translation: 本发明公开了一种用于将包含待印刷的特征的目标图案分解成多个图案的方法,所述特征具有用于对目标图案成像的处理的最小间距内的多个图案。 该方法包括在像素上叠加预定义的内核,并将内核从一个像素移动到另一个像素,像素表示目标图案的子图案。 当像素具有存储的负值的强度值时,内核的极性可能会反转。

    Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
    40.
    发明授权
    Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography 有权
    用于基于模型的散射棒放置的方法,程序产品和装置,用于在四分之一波长光刻中增强聚焦深度

    公开(公告)号:US08495529B2

    公开(公告)日:2013-07-23

    申请号:US12613344

    申请日:2009-11-05

    CPC classification number: G03F7/70441 G03F1/36

    Abstract: A method of generating a mask having optical proximity correction features. The method includes the steps of: (a) obtaining a desired target pattern having features to be imaged on a substrate; (b) determining a first focus setting to be utilized when imaging the mask; (c) determining a first interference map based on the target pattern and the first focus setting; (d) determining a first seeding site representing the optimal placement of an assist feature within the mask relative to a feature to be imaged on the basis of the first interference map; (e) selecting a second focus setting which represents a predefined amount of defocus relative to the first focus setting; (f) determining a second interference map based on the target pattern and the second focus setting; (g) determining a second seeding site representing the optimal placement of an assist feature within the mask relative to the feature to be imaged on the basis of the second interference map; and (h) generating an assist feature having a shape which encompasses both the first seeding site and the second seeding site.

    Abstract translation: 一种产生具有光学邻近校正特征的掩模的方法。 该方法包括以下步骤:(a)获得具有要在基底上成像的特征的期望目标图案; (b)确定在对所述掩模进行成像时要利用的第一焦点设置; (c)基于目标图案和第一焦点设置确定第一干涉图; (d)基于所述第一干涉图,确定表示所述掩模内的辅助特征相对于要成像的特征的最佳布置的第一播种站点; (e)选择表示相对于第一焦点设置的预定义散焦量的第二焦点设置; (f)基于目标图案和第二焦点设置确定第二干涉图; (g)基于所述第二干涉图,确定代表所述掩模内的辅助特征相对于要成像的特征的最佳布置的第二播种站点; 和(h)产生具有包含第一播种部位和第二播种部位的形状的辅助特征。

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