公开(公告)号：US20210050509A1

公开(公告)日：2021-02-18

申请号：US16654647

申请日：2019-10-16

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Kyoung-Woong Moon ,  Chan Yong Hwang

IPC: H01L43/08

Abstract: Disclosed is a method of forming a doughnut-shaped skyrmion, the method including heating a local area of a vertical magnetic thin film magnetized in a first direction, which is any one of an upward direction and a downward direction, applying a magnetic field having a second direction, which is opposite the first direction, and having intensity higher than coercive force of the vertical magnetic thin film to the vertical magnetic thin film to form a first area magnetized in the second direction, applying a magnetic field having the second direction to the vertical magnetic thin film to form a second area, which is an extension of the first area, and applying a magnetic field having the first direction to the vertical magnetic thin film to form a third area magnetized in the first direction in the second area.

公开(公告)号：US20210025549A1

公开(公告)日：2021-01-28

申请号：US16477017

申请日：2018-01-16

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Nam Goo KANG ,  Sang Hyub OH

IPC: F17C13/02 ,  G01F1/34

Abstract: The present invention relates to a method for determining loss of gas in a gas container. According to an embodiment of the present invention, the method for determining the loss of gas in the gas container is characterized by including the steps of (a) filling a first container (10) with a component gas and a balance gas, (b) measuring a gas pressure inside the first gas container (11), (c) allowing the first gas container and a second gas container having an evacuated inside to communicate and performing a first-stage gas pressure split, and (d) measuring a gas pressure inside the second gas container, wherein an amount of the component gas adsorbed inside the gas container is calculated through a difference between a measured value of step (b) and a measured value of step (d) and is determined as an amount of gas loss.

公开(公告)号：US10585151B2

公开(公告)日：2020-03-10

申请号：US15097912

申请日：2016-04-13

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Kwon-Kyu Yu ,  Yong-Ho Lee ,  Kiwoong Kim ,  Jin-Mok Kim ,  Hyukchan Kwon ,  Sang-Kil Lee

IPC: A61B5/00 ,  G01R33/035 ,  A61B5/04 ,  G01R33/00 ,  G01R33/022

Abstract: Superconducting quantum interference device (SQUID) sensor module and a magnetoencephalography (MEG) measuring apparatus. The SQUID sensor module includes a fixed block having one end fixed to the sensor-mounted helmet, a bobbin having one end combined with the other end of the fixed block and having a groove in which a pick-up coil is wound, a bobbin fixing or attachment structure or material fixed to the other end of the fixed block via a through-hole formed in the center of the bobbin, a SQUID printed circuit board (PCB) disposed one an upper side surface of the bobbin and including a SQUID sensor, and a signal line connection PCB inserted into an outer circumferential surface of the fixed block and adapted to transmit a signal detected in the SQUID sensor to an external circuit.

公开(公告)号：US10466031B2

公开(公告)日：2019-11-05

申请号：US15538846

申请日：2016-08-26

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Young-Sik Ghim ,  Hyug-Gyo Rhee ,  Yun Woo Lee

IPC: G01B9/02 ,  G01B11/06 ,  G06F17/16 ,  G06F17/17 ,  G01B11/24

Abstract: The present disclosure relates to an apparatus for measuring a thickness and a surface profile of a multilayered film structure using an imaging spectral optical system and a measuring method. More specifically, the present disclosure relates to a method and an apparatus which measure a thickness and a surface profile of a multilayered thin film structure by applying a method for obtaining an absolute reflectance value for an object to be measured having a multilayered thin film using a reflected light measuring method and extracting a phase from an interference signal with a reference mirror using a phase shift algorithm.

公开(公告)号：US10312049B2

公开(公告)日：2019-06-04

申请号：US15576686

申请日：2016-08-11

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Bok Lae Cho ,  Sang Jung Ahn ,  Inho Sul

IPC: H01J37/16 ,  H01J37/20 ,  H01J37/26 ,  G02B21/00 ,  G02B21/02 ,  G02B21/06 ,  G02B21/36 ,  H01J37/18 ,  H01J37/22 ,  H01J37/244 ,  H01J37/285

Abstract: A vacuum sample chamber for a particle and optical device includes on one surface thereof, an aperture through which a particle beam to be focused along an optical axis of particles such as electrons, ions and neutral particles is incident; and on the opposite surface thereof, a detachable sample holder through which light penetrates, thereby enabling a sample to be observed and analyzed by means of the particle beam and light. A sample chamber is capable of reducing observation time by maintaining a vacuum therein even when a sample is put into or taken out from a sample chamber of an electron microscope or focused ion beam observation equipment, and capable of obtaining an optical image on the outside thereof without inserting a light source or an optical barrel into the sample chamber. A light-electron fusion microscope comprising the sample chamber.

公开(公告)号：US20190154502A1

公开(公告)日：2019-05-23

申请号：US15527588

申请日：2016-05-20

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Takashi OGAWA ,  Ju Hwang KIM

IPC: G01J3/12 ,  H01J37/26 ,  H01J37/05 ,  G01N23/2251

Abstract: The present invention relates to an electron beam apparatus including a monochromator in which cylindrical electrostatic lenses for deflecting a path of an electron beam in the lenses are arranged symmetrically and an aperture including a plurality of selectable slits is disposed therebetween to be able to select an electron beam having a specified energy range. The electron beam apparatus has a monochromator having high resolution and excellent stability and maintainability by disposing slits and circular openings in one aperture part in parallel arrangement, thereby improving spatial resolution and energy resolution.

公开(公告)号：US10253378B2

公开(公告)日：2019-04-09

申请号：US15037311

申请日：2014-11-18

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Inchul Yang ,  Hannah Yu ,  Hyo-jin Yang ,  Sook-Kyung Kim ,  Sang-Ryoul Park

IPC: C12Q1/68 ,  C12Q1/689

Abstract: The present invention relates to utilization of an artificially synthesized nucleic acid, and more particularly, to a quantitative analysis method capable of quantitatively adjusting gene-based microbial community analysis results by preparing a microorganism 16S rDNA gene, which has a single nucleotide polymorphism (SNP) at a particular location so as to be differentiated from a gene of a target microorganism on the nucleotide sequence, and then using the microorganism 16S rDNA gene as an internal standard material which is quantifiable through nucleotide sequencing.

公开(公告)号：US10147789B2

公开(公告)日：2018-12-04

申请号：US15317922

申请日：2014-06-25

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Woo Lee ,  Jeong Ho Shin

IPC: H01L29/06 ,  H01L21/306 ,  H01L29/20 ,  B82B3/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/3063 ,  H01L21/308

Abstract: The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode.

公开(公告)号：US10062799B2

公开(公告)日：2018-08-28

申请号：US14884644

申请日：2015-10-15

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Ansoon Kim ,  Kyung Joong Kim ,  Songwoung Hong

IPC: H01L31/00 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L31/074 ,  H01L31/0352

CPC classification number: H01L31/1804 ,  H01L31/035218 ,  H01L31/074 ,  H01L31/186 ,  H01L33/0058 ,  H01L33/06 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.

公开(公告)号：US10033307B2

公开(公告)日：2018-07-24

申请号：US14840525

申请日：2015-08-31

Applicant: Korea Research Institute of Standards and Science

Inventor： Geun-Woo Lee ,  Sangho Jeon ,  Dong-Hee Kang

IPC: H02N13/00 ,  G01N1/28 ,  F27B17/02 ,  G01N11/00

CPC classification number: H02N13/00 ,  F27B17/02 ,  G01N1/28 ,  G01N11/00 ,  H02N1/002

Abstract: Sample loading device and electrostatic levitation apparatus. The electrostatic levitation apparatus includes a sample storage part including a rod-shaped sample standby part having an external diameter of a first diameter and a rod-shaped sample loading part having an external diameter of a second diameter and a sample cover part covering the sample standby part. The sample storage part has a loading bar inserting hole formed in its center. The loading bar inserting hole is formed through the sample standby part and is formed successively through a portion of the sample loading part. The sample standby part has sample storage vertical through-holes. The sample loading part has a single sample transfer vertical through-hole. The sample transfer vertical through-hole is formed on a surface where the sample storage vertical through-hole is viewed, penetrates the sample loading part, and is connected to the loading bar inserting hole.