公开(公告)号：US20100195691A1

公开(公告)日：2010-08-05

申请号：US12696322

申请日：2010-01-29

Applicant: Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

Inventor： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

IPC: H01S5/187

CPC classification number: H01S5/2202 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3434

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract translation: 激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层 有源层，在蚀刻阻挡层上形成一对AlGaInP的电流阻挡区域，以便限定它们之间的条带区域，形成在一对电流阻挡区域上以覆盖蚀刻阻挡层的AlGaInP光波导层 以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

公开(公告)号：US20100140632A1

公开(公告)日：2010-06-10

申请号：US12329100

申请日：2008-12-05

Applicant: Pierre Doussiere

Inventor： Pierre Doussiere

IPC: H01L33/00

CPC classification number: H01L27/15 ,  H01L33/0045 ,  H01S5/3201

Abstract: The invention relates to a broad-band light emitting diode having an active layer composed of a plurality of light emission regions of differing materials for emitting light at a plurality of wavelengths, wherein each of the emission regions of the active layer is electrically controlled by a separate electrode for providing a broad-band emission or optical gain with a multi-point control of its spectral profile.

Abstract translation: 本发明涉及一种宽带发光二极管，其具有由多个用于发射多个波长的光的不同材料的发光区域组成的有源层，其中有源层的每个发射区域由 单独的电极，用于通过其光谱分布的多点控制提供宽带发射或光学增益。

公开(公告)号：US07645626B2

公开(公告)日：2010-01-12

申请号：US11027436

申请日：2004-12-30

Applicant: Wonill Ha ,  Vincent Gambin ,  James S. Harris

Inventor： Wonill Ha ,  Vincent Gambin ,  James S. Harris

IPC: H01L21/00

CPC classification number: H01S5/18305 ,  B82Y20/00 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/32366 ,  H01S5/34306 ,  H01S2302/00

Abstract: In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths approaching and beyond 1.3 μm. According to one aspect, a multiple quantum well strain compensated structure is formed using a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. By growing tensile-strained GaNAs barrier layers, a larger active region with multiple quantum wells can be formed increasing the optical gain of the device. In example implementations, both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices can be grown with at least several quantum wells, for example, nine quantum wells, and with room temperature emission approaching and beyond 1.3 μm.

Abstract translation: 关于光电子半导体器件，在接近和超过1.3μm的波长处提供改进的光致发光输出。 根据一个方面，使用具有基于GaNA的阻挡层的基于GaInNA的量子阱激光二极管形成多量子阱应变补偿结构。 通过生长拉应变GaNAs势垒层，可以形成具有多个量子阱的较大有源区域，从而增加器件的光学增益。 在示例实现中，边缘发射激光器件和垂直腔表面发射激光器（VCSEL）器件可以用至少几个量子阱，例如九个量子阱，并且室温发射接近并超过1.3μm而生长。

公开(公告)号：US07615389B2

公开(公告)日：2009-11-10

申请号：US11893188

申请日：2007-08-15

Applicant: Rajaram Bhat ,  Jerome Napierala ,  Dmitry Sizov ,  Chung-En Zah

Inventor： Rajaram Bhat ,  Jerome Napierala ,  Dmitry Sizov ,  Chung-En Zah

IPC: H01L21/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/183 ,  H01S5/3201 ,  H01S5/3216 ,  H01S2301/173

Abstract: Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In accordance with one embodiment of the present invention, a Ga(In)N-based semiconductor laser is provided on an AlN or GaN substrate provided with an AlGaN lattice adjustment layer where the substrate, the lattice adjustment layer, the lower cladding region, the active waveguiding region, the upper cladding region, and the N and P type contact regions of the laser form a compositional continuum in the semiconductor laser. Additional embodiments are disclosed and claimed.

Abstract translation: 提出了Ga（In）N基激光器结构及相关的制造方法，其中以Al（N）或GaN衬底形成Ga（In）N基半导体激光器结构，以满足在半导体结构中避免不适当拉伸应变的需要 。 根据本发明的一个实施例，在设置有AlGaN晶格调整层的AlN或GaN衬底上设置Ga（In）N基半导体激光器，其中衬底，晶格调整层，下包层区域， 有源波导区域，上覆层区域和激光器的N和P型接触区域形成半导体激光器中的组成连续体。 公开并要求保护附加实施例。

公开(公告)号：US07526008B2

公开(公告)日：2009-04-28

申请号：US11746160

申请日：2007-05-09

Applicant: Masaki Shiozaki

Inventor： Masaki Shiozaki

IPC: H01S5/00

CPC classification number: H01S5/18355 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/3201

Abstract: A surface emitting semiconductor laser device which can be manufactured easily and inexpensively and in which the direction of polarization of a laser beam can be controlled into a fixed direction. An oxidizing treatment is applied to a current confinement layer to form a current passage region in a rectangular shape having an in-plane anisotropy. In addition, a pair of trenches with their side surfaces, on the side of a beam outgoing aperture, set to be parallel to either of the diagonal direction of the current passage region is provided at opposite positions with the beam outgoing aperture as a center therebetween. The direction of polarization of the laser beam made to go out through the beam outgoing aperture is specified into only one direction, whereby the direction of polarization can be accurately controlled to a fixed direction. Besides, where the trench or trenches are filled with a metallic material or insulating material which is absorptive with respect to the laser beam, the polarization ratio of the laser beam is further enhanced.

Abstract translation: 可以容易且廉价地制造能够将激光束的偏振方向控制在固定方向的表面发射半导体激光器件。 对电流限制层进行氧化处理，形成具有面内各向异性的矩形的电流通路区域。 此外，设置成平行于电流通道区域的对角方向中的任一方的其侧表面侧面的一对沟槽的光束出射孔设置在作为其中心的光束出射孔的相对位置处 。 使通过光束射出孔径出射的激光束的偏振方向仅被指定为一个方向，从而可以精确地将偏振方向控制到固定方向。 此外，在沟槽或沟槽充满相对于激光束吸收的金属材料或绝缘材料的情况下，激光束的偏振比进一步提高。

公开(公告)号：US20080317080A1

公开(公告)日：2008-12-25

申请号：US12109124

申请日：2008-04-24

Applicant: Shingo Kameyama ,  Yasuhiko Nomura ,  Masayuki Hata

Inventor： Shingo Kameyama ,  Yasuhiko Nomura ,  Masayuki Hata

IPC: H01S5/00

CPC classification number: H01S5/22 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01S5/0207 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/3201 ,  H01S5/32341 ,  H01S5/4031 ,  H01L2924/00014 ,  H01L2924/00

Abstract: In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.

Abstract translation: 在该半导体激光器件中，将半导体激光元件固定在基底上，使其翘曲的凸面与基底之间的距离至少沿着与拉伸方向对应的第一方向随着半导体激光元件的翘曲而变化 在与第一半导体激光元件的翘曲的凸侧面之间的距离对应的区域附近的电极层的一部分附近设置引线接合部， 半导体激光元件的方向或第二方向基本上最小。

公开(公告)号：US20080291958A1

公开(公告)日：2008-11-27

申请号：US12126365

申请日：2008-05-23

Applicant: Shingo Kameyama ,  Yasuhiko Nomura ,  Masayuki Hata ,  Kyoji Inoshita

Inventor： Shingo Kameyama ,  Yasuhiko Nomura ,  Masayuki Hata ,  Kyoji Inoshita

IPC: H01S3/04

CPC classification number: H01S5/10 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01S5/0207 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/3201

Abstract: In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.

Abstract translation: 在半导体激光装置中，将半导体激光元件固定在基底上，使得半导体激光元件的翘曲的凸面与基体之间的距离随着半导体激光元件的翘曲沿对应于半导体激光元件的第一方向而变化 在与距离最大的区域的附近对应的电极层的一部分周围设置引线接合部的情况下的空腔的延伸方向。

公开(公告)号：US20080212633A1

公开(公告)日：2008-09-04

申请号：US12040348

申请日：2008-02-29

Applicant: Hitoshi Shimizu ,  Takeo Kageyama

Inventor： Hitoshi Shimizu ,  Takeo Kageyama

IPC: H01S5/34

CPC classification number: H01S5/18311 ,  B82Y20/00 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/3095 ,  H01S5/3201 ,  H01S5/3406 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/173

Abstract: An optical resonator including a lower multilayer reflector and an upper multilayer reflector is arranged on a substrate. A strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer is arranged in the resonator. A current confinement layer including a selectively oxidized portion is arranged on an upper side of the strained active layer. The current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.

Abstract translation: 包括下多层反射器和上多层反射器的光学谐振器被布置在基板上。 具有量子阱层和势垒层的多量子阱结构的应变有源层被布置在谐振器中。 包含选择性氧化部分的电流限制层布置在应变有源层的上侧。 电流限制层布置在选择性氧化部分的应变影响应变有源层的位置处。

公开(公告)号：US07378680B2

公开(公告)日：2008-05-27

申请号：US10931194

申请日：2004-08-31

Applicant: Ralph H. Johnson ,  Virgil J. Blasingame

Inventor： Ralph H. Johnson ,  Virgil J. Blasingame

IPC: H01L29/06 ,  H01L21/00

CPC classification number: B82Y20/00 ,  H01L33/007 ,  H01S5/18308 ,  H01S5/3201 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S2302/00

Abstract: Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V before, and/or after, and/or in-between quantum wells. Where GaAs is used, the process can be accomplished by alternately opening and closing Ga and As shutters in an MBE system, while preventing both from being open at the same time. Where nitrogen is used, the system incorporates a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.

Abstract translation: 方法和系统产生与含氮量子阱相关的扁平层，并且使用高As流量防止含氮层的3-D生长。 MEE（迁移增强外延）用于平坦化层并增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。 通过在量子阱之间，之前和/或之后交替沉积III族和V族的单一原子层来执行MEE。 在使用GaAs的情况下，可以通过在MBE系统中交替地打开和关闭Ga和As快门来实现该过程，同时防止两者同时打开。 在使用氮气的情况下，该系统包含防止氮气进入MBE处理室（例如闸阀）的机械装置。

公开(公告)号：US07368766B2

公开(公告)日：2008-05-06

申请号：US10891968

申请日：2004-07-15

Applicant: Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

Inventor： Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

IPC: H01L31/072

CPC classification number: B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/02272 ,  H01S5/2068 ,  H01S5/2201 ,  H01S5/2232 ,  H01S5/2237 ,  H01S5/24 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/3403 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12 ,  Y10S257/918 ,  Y10T428/12528

Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

Abstract translation: 本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。