公开(公告)号：US20060283379A1

公开(公告)日：2006-12-21

申请号：US11356414

申请日：2006-02-17

Applicant: Shuichi Inami ,  Nobumitsu Takase ,  Yasuhiro Kogure ,  Ken Hamada ,  Tsuyoshi Nakamura

Inventor： Shuichi Inami ,  Nobumitsu Takase ,  Yasuhiro Kogure ,  Ken Hamada ,  Tsuyoshi Nakamura

IPC: C30B21/04 ,  C30B13/00 ,  C30B28/08

CPC classification number: C30B29/06 ,  C30B15/04 ,  C30B15/14

Abstract: In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×1017 to 18×1017 atoms/cm3 on ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350° C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350° C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5° C./mm.

Abstract translation: 在用于生长硅单晶的方法中，硅单晶通过切克劳斯（Czochralski）法生长，以使氧浓度为12×10 17至18×10 17原子/ cm 2 > 3 。使用惰性气体和含有氢原子的气态物质的混合气体作为用于生长单晶的气氛气体。 在晶体生长期间控制硅单晶的温度，使得晶体中心部分处的熔点和其温度为1350℃之间的轴向热梯度Gc的比率Gc / Ge与轴向 在其熔点和其温度为1350℃之间的晶体周边的热梯度Ge为1.1至1.4。 晶体中心部分的轴向热梯度Gc为3.0〜3.5℃/ mm。

公开(公告)号：US20060254500A1

公开(公告)日：2006-11-16

申请号：US11293655

申请日：2005-12-02

Applicant: James Im ,  Paul Van Der Wilt

Inventor： James Im ,  Paul Van Der Wilt

IPC: C30B21/04 ,  C30B13/00 ,  C30B28/08

CPC classification number: H01L21/02686 ,  B23K26/0738 ,  C30B13/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a predetermined length and width, said width sufficient to prevent nucleation of solids in a portion of the thin film that is irradiated by the laser pulse, (c) irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone demonstrating a variation in width along its length to thereby define a maximum width (Wmax) and a minimum width (Wmin), wherein the first molten zone crystallizes upon cooling to form one or more laterally grown crystals, (d) laterally moving the film in the direction of lateral growth a distance that is greater than about one-half Wmax and less than Wmin; and (e) irradiating a second region of the film with a second laser pulse to form a second molten zone having a shape that is substantially the same as the shape of the first molten zone, wherein the second molten zone crystallizes upon cooling to form one or more laterally grown crystals that are elongations of the one or more crystals in the first region.

Abstract translation: 通过（a）提供具有设置在其上的薄膜的基板，所述膜能够进行激光诱导熔化，（b）产生具有足以使膜在整个厚度上熔化的能量密度的激光脉冲序列来制备多晶膜 在照射区域中，每个脉冲形成具有预定长度和宽度的线束，所述宽度足以防止由激光脉冲照射的薄膜部分中的固体成核，（c）照射第一区域 薄膜具有第一激光脉冲以形成第一熔融区，所述第一熔融区表现出沿其长度的宽度变化，从而限定最大宽度（W max）和最小宽度（W _{max 且小于W mi n}

公开(公告)号：US20050223967A1

公开(公告)日：2005-10-13

申请号：US10822336

申请日：2004-04-12

Applicant: Leo Schowalter ,  Glen Slack

Inventor： Leo Schowalter ,  Glen Slack

IPC: C30B1/00 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B25/00 ,  C30B28/08 ,  C30B28/12 ,  C30B28/14 ,  C30B29/40 ,  C30B35/00

CPC classification number: C30B29/40 ,  C30B11/002 ,  C30B23/00 ,  C30B23/066 ,  C30B29/403 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/108 ,  Y10T117/1084

Abstract: A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W—Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W—Ta); tungsten (W); and combinations thereof.

Abstract translation: 提供了用于生长III族氮化物（例如氮化铝）单晶的坩埚。 坩埚包括限定内部晶体生长腔的细长壁结构。 实施例包括多个晶粒和至少约平均晶粒尺寸的1.5倍的壁厚。 在具体实施方案中，坩埚包括第一和第二颗粒层，第一层包括形成内表面的颗粒，第二层与第一层重叠。 坩埚可以由钨 - 铼（W-Re）合金制成; 铼（Re）; 钽单体碱（TaC）; 氮化钽（Ta 2 N）; 氮化铪（HfN）; 钨和钽的混合物（W-Ta）; 钨（W）; 及其组合。

公开(公告)号：US5667585A

公开(公告)日：1997-09-16

申请号：US579350

申请日：1995-12-27

Applicant: Tsuguo Fukuda ,  Susumu Sakaguchi ,  Tadashi Kamioka ,  Toru Yamada ,  Teruhiko Hirasawa

Inventor： Tsuguo Fukuda ,  Susumu Sakaguchi ,  Tadashi Kamioka ,  Toru Yamada ,  Teruhiko Hirasawa

IPC: C30B13/00 ,  C30B15/00 ,  C30B28/08

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B15/00

Abstract: Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.

Abstract translation: 提出了一种低成本的制备直径为1mm以下的硅线状晶体的低成本方法，其中通过高频感应加热在一端部将垂直保持的硅起始棒熔化， 使晶种与熔融部分接触，然后晶体和起始硅棒以受控的高频功率输入以受控的速度在垂直方向上拉开，使得由晶种吸收的硅熔体 被固化并结晶成线的形式。

公开(公告)号：US3424629A

公开(公告)日：1969-01-28

申请号：US3424629D

申请日：1965-12-13

Applicant: IBM

Inventor： ERNST ERIC O ,  HURD DONALD J ,  SEELEY GERARD

IPC: C23C16/00 ,  C30B23/00 ,  C30B25/08 ,  C30B28/08 ,  H01L21/00 ,  H01L21/20 ,  H01L7/36

CPC classification number: H01L21/00 ,  C23C16/00 ,  C30B23/00 ,  C30B25/08 ,  C30B28/08 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

公开(公告)号：US11183402B2

公开(公告)日：2021-11-23

申请号：US15795746

申请日：2017-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong-han Shin ,  Supakit Charnvanichborikarn ,  Bong-jin Kuh ,  Ki-chul Kim ,  Jae-hee Lee

IPC: C30B28/08 ,  C30B13/24 ,  G01N21/00 ,  H01L21/67 ,  G01N21/55

Abstract: A laser annealing apparatus includes a laser oscillating structure, an oscillator, a beam expanding telescope, a first power meter, and a second power meter. The laser oscillating structure emits a first laser beam of a first wavelength and first beam cross-section to a substrate in a chamber including an optical window. The oscillator emits a second laser beam, of a second wavelength different from the first wavelength, to the substrate. The beam expanding telescope is on an optical path for the second laser beam and expands the second laser beam to a second beam cross-section. The first and second power meters measure energy of the second laser beam and a third laser beam, generated as the second laser beam is reflected by the substrate. The first beam cross-section and the second beam cross-section may be equal.

公开(公告)号：US10106914B2

公开(公告)日：2018-10-23

申请号：US15081836

申请日：2016-03-25

Applicant: AP SYSTEMS INC.

Inventor： Pil Seong Jeong ,  Sang Hyun Ji ,  Sung Yong Lee ,  Yong Woo Han

IPC: C30B29/06 ,  H01L21/67 ,  H01L29/66 ,  C23C16/56 ,  C23C16/24 ,  C30B28/08

Abstract: The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.

公开(公告)号：US20160284562A1

公开(公告)日：2016-09-29

申请号：US15081836

申请日：2016-03-25

Applicant: AP SYSTEMS INC.

Inventor： Pil Seong JEONG ,  Sang Hyun JI ,  Sung Yong LEE ,  Yong Woo HAN

IPC: H01L21/324 ,  H01L21/477 ,  C30B29/06 ,  C23C16/56 ,  C23C16/24 ,  C30B28/08 ,  H01L21/67 ,  H01L29/66

CPC classification number: C30B29/06 ,  C23C16/24 ,  C23C16/46 ,  C23C16/56 ,  C30B28/08 ,  H01L21/67115 ,  H01L27/1285 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765

Abstract: The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.

Abstract translation: 本公开控制热源单元，使得其中形成有含氢待处理层的被处理物体被两次照射，因此半导体器件的电特性可以是 抑制和防止由于氢而劣化。 也就是说，首先辐射的紫外线（UV）可能引起用于分离被处理层中的Si-H键的化学反应，并且第二次辐射的红外光（IR）可能引起热反应， 从Si-H键分离出氢。 因此，进行用于分离待处理层中的氢和其它离子的键的化学反应和用于汽化氢的热反应，因此氢可以比从氢气蒸发的温度更容易地除去 待处理层仅通过热反应。

公开(公告)号：US09099386B2

公开(公告)日：2015-08-04

申请号：US13785400

申请日：2013-03-05

Applicant: Kabushiki Kaisha Toshiba

Inventor： Tsutomu Kakuno ,  Ryuichi Togawa ,  Hiroshi Ito

IPC: H01L21/20 ,  H01L21/263 ,  B23K26/00 ,  B23K26/073 ,  B23K26/08 ,  C30B1/02 ,  C30B28/08 ,  C30B29/06 ,  C30B35/00 ,  H01L21/268

CPC classification number: H01L21/2636 ,  B23K26/0738 ,  B23K26/083 ,  B23K26/352 ,  C30B1/02 ,  C30B1/023 ,  C30B28/08 ,  C30B29/06 ,  C30B35/00 ,  H01L21/268

Abstract: According to one embodiment, a laser annealing method includes: detecting an intensity distribution of a laser light formed as a line beam by a line beam optical system; dividing width in short axis direction of the line beam in the detected intensity distribution by number of times of the irradiation per one site and partitioning the width; and calculating increment of crystal grain size of a non-crystalline thin film for energy density corresponding to wave height of the partitioned intensity distribution, and summing the increments by number of times of pulse irradiation, when energy density of the laser light is larger than a threshold, the crystal grain size of the non-crystalline thin film taking a downward turn at the threshold, the increment summed before the energy density exceeds the threshold being set to zero.

Abstract translation: 根据一个实施例，激光退火方法包括：通过线束光学系统检测形成为线束的激光的强度分布; 将检测出的强度分布中的线束的短轴方向的宽度分割为每个部位的照射次数，并分割宽度; 以及计算对应于分割强度分布的波高的能量密度的非晶体薄膜的晶粒尺寸的增量，并且当激光的能量密度大于 阈值时，非晶体薄膜的晶体尺寸在阈值处呈向下转动，在能量密度超过阈值之前相加的增量被设置为零。

公开(公告)号：US08101019B2

公开(公告)日：2012-01-24

申请号：US12334646

申请日：2008-12-15

Applicant: Uwe Sahr ,  Matthias Mueller ,  Ingo Schwirtlich ,  Frank-Thomas Lentes ,  Frank Buellesfeld

Inventor： Uwe Sahr ,  Matthias Mueller ,  Ingo Schwirtlich ,  Frank-Thomas Lentes ,  Frank Buellesfeld

IPC: C30B15/14 ,  C30B11/00 ,  C30B21/04 ,  C30B13/00 ,  C30B28/08 ,  C30B9/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06 ,  C30B35/00

CPC classification number: C30B11/003 ,  C30B11/04 ,  C30B29/06 ,  Y10T117/10

Abstract: In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical gradient freeze method. The molten material trickles downward, so that the raw material that has not yet melted gradually slumps in the melting crucible. The semiconductor raw material is replenished from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted to at least partly compensate for shrinkage of the raw material and to raise the filling level. To reduce the melting time and influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated to a temperature below its melting temperature and introduced into the crucible in the heated state.

Abstract translation: 在制造单晶或多晶半导体材料的方法中，使用垂直梯度冷冻法将半导体原料引入熔融坩埚中并定向凝固。 熔融材料向下流动，使得尚未熔化的原料在熔化的坩埚中逐渐下降。 半导体原料从上方补充到尚未熔化或不完全熔化的至少部分地补偿原料收缩并提高填充水平的半导体原料区域上。 为了尽可能少地减少熔融时间并影响系统中的热条件，待补充的半导体原料被加热至低于其熔融温度的温度，并在加热状态下引入坩埚。