公开(公告)号：US07674389B2

公开(公告)日：2010-03-09

申请号：US11260021

申请日：2005-10-26

Applicant: Alex Zettl ,  Thomas David Yuzvinsky ,  Adam Fennimore

Inventor： Alex Zettl ,  Thomas David Yuzvinsky ,  Adam Fennimore

IPC: H01L21/302 ,  B23K15/00 ,  B82B3/00

CPC classification number: H01J37/317 ,  B82Y30/00 ,  H01J2237/317 ,  Y10S977/856 ,  Y10S977/888 ,  Y10S977/90

Abstract: Methods of shape modifying a nanodevice by contacting it with a low-energy focused electron beam are disclosed here. In one embodiment, a nanodevice may be permanently reformed to a different geometry through an application of a deforming force and a low-energy focused electron beam. With the addition of an assist gas, material may be removed from the nanodevice through application of the low-energy focused electron beam. The independent methods of shape modification and material removal may be used either individually or simultaneously. Precision cuts with accuracies as high as 10 nm may be achieved through the use of precision low-energy Scanning Electron Microscope scan beams. These methods may be used in an automated system to produce nanodevices of very precise dimensions. These methods may be used to produce nanodevices of carbon-based, silicon-based, or other compositions by varying the assist gas.

Abstract translation: 这里公开了通过使纳米器件与低能聚焦电子束接触来对纳米器件进行形状修饰的方法。 在一个实施例中，可以通过施加变形力和低能量聚焦电子束将纳米器件永久地重新形成为不同的几何形状。 通过添加辅助气体，可以通过施加低能聚焦电子束从纳米器件中去除材料。 形状修改和材料去除的独立方法可以单独使用或同时使用。 通过使用精密的低能量扫描电子显微镜扫描光束可以实现精度高达10 nm的精密切割。 这些方法可以用于自动化系统以产生非常精确尺寸的纳米器件。 这些方法可用于通过改变辅助气体来制备碳基，硅基或其它组合物的纳米器件。

公开(公告)号：US20070114880A1

公开(公告)日：2007-05-24

申请号：US11383904

申请日：2006-05-17

Applicant: Alexander Zettl ,  Adam Fennimore ,  Thomas Yuzvinsky

Inventor： Alexander Zettl ,  Adam Fennimore ,  Thomas Yuzvinsky

IPC: H01L41/04 ,  H02N1/00

CPC classification number: B82Y10/00 ,  G02B26/0833 ,  H02N1/002 ,  Y10S977/725 ,  Y10S977/733 ,  Y10S977/752

Abstract: A rotational actuator/motor based on rotation of a carbon nanotube is disclosed. The carbon nanotube is provided with a rotor plate attached to an outer wall, which moves relative to an inner wall of the nanotube. After deposit of a nanotube on a silicon chip substrate, the entire structure may be fabricated by lithography using selected techniques adapted from silicon manufacturing technology. The structures to be fabricated may comprise a multiwall carbon nanotube (MWNT), two in plane stators S1, S2 and a gate stator S3 buried beneath the substrate surface. The MWNT is suspended between two anchor pads and comprises a rotator attached to an outer wall and arranged to move in response to electromagnetic inputs. The substrate is etched away to allow the rotor to freely rotate. Rotation may be either in a reciprocal or fully rotatable manner.

Abstract translation: 公开了一种基于碳纳米管旋转的旋转致动器/马达。 碳纳米管设置有转子板，该转子板附接到相对于纳米管的内壁移动的外壁。 在硅芯片基板上沉积纳米管之后，可以使用从硅制造技术中选择的技术通过光刻制造整个结构。 要制造的结构可以包括多壁碳纳米管（MWNT），平面定子S 1，S 2中的两个和埋在衬底表面下方的栅极定子S 3。 MWNT悬挂在两个锚垫之间并且包括附接到外壁并被布置成响应于电磁输入而移动的旋转体。 蚀刻掉衬底以允许转子自由旋转。 旋转可以是相互或完全可旋转的方式。

公开(公告)号：US08778785B2

公开(公告)日：2014-07-15

申请号：US12937569

申请日：2009-05-15

Applicant: Reid John Chesterfield ,  Nugent Truong ,  Jeffrey A. Merlo ,  Adam Fennimore ,  Jonathan M. Ziebarth

Inventor： Reid John Chesterfield ,  Nugent Truong ,  Jeffrey A. Merlo ,  Adam Fennimore ,  Jonathan M. Ziebarth

IPC: H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L51/56 ,  H01L31/18 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L51/56 ,  H01L31/18 ,  H01L51/0004 ,  H01L51/0026 ,  H01L51/5203

Abstract: There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes the steps of providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of −25 to 80° C. and under a vacuum in the range of 10−6 to 1,000 Torr, for a first period of 1-100 minutes, to form a partially dried layer; and heating the partially dried layer to a temperature above 100° C. for a second period of 1-50 minutes to form a dried layer.

公开(公告)号：US08592239B2

公开(公告)日：2013-11-26

申请号：US12643403

申请日：2009-12-21

Applicant: Adam Fennimore ,  Jonathan M. Ziebarth ,  Nora Sabina Radu

Inventor： Adam Fennimore ,  Jonathan M. Ziebarth ,  Nora Sabina Radu

IPC: H01L21/00

CPC classification number: H01L51/52 ,  B05D3/06 ,  H01L51/0002 ,  H01L51/0004 ,  H01L51/0012 ,  H01L51/56

Abstract: There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a priming layer; exposing the priming layer patternwise with radiation resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from either the exposed areas or the unexposed areas resulting in a first layer having a pattern of priming layer, wherein the pattern of priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid depositions on the pattern of priming layer on the first layer. There is also provided an organic electronic device made by the process.

Abstract translation: 提供了一种用于在第一层上形成包含的第二层的方法，包括以下步骤：形成具有第一表面能的第一层; 用起始层处理第一层; 以辐射模式曝光引发层，导致曝光区域和未曝光区域; 开发底漆层以有效地从曝光区域或未曝光区域去除底漆层，从而产生具有起泡层图案的第一层，其中底漆层的图案具有比第一表面能高的第二表面能 ; 以及通过在第一层上的起动层的图案上的液体沉积形成第二层。 还提供了通过该方法制造的有机电子装置。

公开(公告)号：US20120065432A1

公开(公告)日：2012-03-15

申请号：US13241580

申请日：2011-09-23

Applicant: GARY A. JOHANSSON ,  Eric Maurice Smith ,  Reid John Chesterfield ,  Michael Henry Howard, JR. ,  Kyung-Ho Park ,  Nora Sabina Radu ,  Gene M. Rossi ,  Frederick P. Gentry ,  Troy C. Gehret ,  Daniel David Lecloux ,  Adam Fennimore

Inventor： GARY A. JOHANSSON ,  Eric Maurice Smith ,  Reid John Chesterfield ,  Michael Henry Howard, JR. ,  Kyung-Ho Park ,  Nora Sabina Radu ,  Gene M. Rossi ,  Frederick P. Gentry ,  Troy C. Gehret ,  Daniel David Lecloux ,  Adam Fennimore

IPC: C07C211/54

CPC classification number: H01L51/0035 ,  C07C211/54 ,  C07C211/58 ,  C07C217/92 ,  C08G73/026 ,  C08L79/02 ,  C09B69/109 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1416 ,  C09K2211/1425 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/5012 ,  H01L51/5048 ,  H01L2251/308

Abstract: A compound having Formula I, Formula II, or Formula III: Ar1 may independently be phenylene, substituted phenylene, naphthylene, or substituted naphthylene. Ar2 is the same or different at each occurrence and is an aryl group. M is the same or different at each occurrence and is a conjugated moiety. T1 and T2 are independently the same or different at each occurrence and are conjugated moieties which are connected in a non-planar configuration; a and e are the same or different at each occurrence and are an integer from 1 to 6; b, c, and d are mole fractions such that b+c+d=1.0, with the proviso that c is not zero, and at least one of b and d is not zero, and when b is zero, M has at least two triarylamine units; and n is an integer greater than 1.

公开(公告)号：US08063399B2

公开(公告)日：2011-11-22

申请号：US12272210

申请日：2008-11-17

Applicant: Gary A. Johansson ,  Eric Maurice Smith ,  Reid John Chesterfield ,  Michael Henry Howard, Jr. ,  Kyung-Ho Park ,  Nora Sabina Radu ,  Gene M. Rossi ,  Frederick P. Gentry ,  Troy C. Gehret ,  Daniel David Lecloux ,  Adam Fennimore

Inventor： Gary A. Johansson ,  Eric Maurice Smith ,  Reid John Chesterfield ,  Michael Henry Howard, Jr. ,  Kyung-Ho Park ,  Nora Sabina Radu ,  Gene M. Rossi ,  Frederick P. Gentry ,  Troy C. Gehret ,  Daniel David Lecloux ,  Adam Fennimore

IPC: H01L51/00

CPC classification number: H01L51/0035 ,  C07C211/54 ,  C07C211/58 ,  C07C217/92 ,  C08G73/026 ,  C08L79/02 ,  C09B69/109 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1416 ,  C09K2211/1425 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/5012 ,  H01L51/5048 ,  H01L2251/308

Abstract: A compound having Formula I, Formula II, or Formula III: Ar1 may independently be phenylene, substituted phenylene, naphthylene, or substituted naphthylene. Ar2 is the same or different at each occurrence and is an aryl group. M is the same or different at each occurrence and is a conjugated moiety. T1 and T2 are independently the same or different at each occurrence and are conjugated moieties which are connected in a non-planar configuration; a and e are the same or different at each occurrence and are an integer from 1 to 6; b, c, and d are mole fractions such that b+c+d=1.0, with the proviso that c is not zero, and at least one of b and d is not zero, and when b is zero, M has at least two triarylamine units; and n is an integer greater than 1.

Abstract translation: 具有式I，式II或式III的化合物：Ar 1可以独立地是亚苯基，取代的亚苯基，亚萘基或取代的亚乙基。 Ar2在每次出现时相同或不同，为芳基。 M在每次出现时相同或不同，为共轭部分。 T1和T2在每次出现时独立地相同或不同，并且是以非平面构型连接的共轭部分; a和e在每次出现时相同或不同，为1〜6的整数; b，c和d是摩尔分数，使得b + c + d = 1.0，条件是c不为零，b和d中的至少一个不为零，当b为零时，M至少为 两个三芳基胺单元; n是大于1的整数。

公开(公告)号：US20110037057A1

公开(公告)日：2011-02-17

申请号：US12643420

申请日：2009-12-21

Applicant: Daniel David LeCloux ,  Adam Fennimore ,  Weiying Gao ,  Nora Sabina Radu ,  Weishi Wu ,  Vsevolod Rostovtsev ,  Michael Henry Howard, JR. ,  Hong Meng ,  Yulong Shen ,  Jeffrey A. Merlo ,  Eric Maurice Smith

Inventor： Daniel David LeCloux ,  Adam Fennimore ,  Weiying Gao ,  Nora Sabina Radu ,  Weishi Wu ,  Vsevolod Rostovtsev ,  Michael Henry Howard, JR. ,  Hong Meng ,  Yulong Shen ,  Jeffrey A. Merlo ,  Eric Maurice Smith

IPC: H01L51/54 ,  C07C13/58 ,  C07D209/86 ,  C07D307/87 ,  C07D307/91

CPC classification number: H01L51/0058 ,  C07B59/001 ,  C07B2200/05 ,  C07C15/28 ,  C07C2603/24 ,  C07D209/86 ,  C07D307/87 ,  C07D307/91 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0052 ,  H01L51/006 ,  H01L51/5024 ,  H01L51/5036

Abstract: This invention relates to deuterated aryl-anthracene compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.

Abstract translation: 本发明涉及可用于电子应用的氘代芳基蒽化合物。 它还涉及其中活性层包括这种氘代化合物的电子器件。

公开(公告)号：US20110017980A1

公开(公告)日：2011-01-27

申请号：US12643403

申请日：2009-12-21

Applicant: Adam Fennimore ,  Jonathan M. Ziebarth ,  Nora Sabina Radu

Inventor： Adam Fennimore ,  Jonathan M. Ziebarth ,  Nora Sabina Radu

IPC: H01L51/00 ,  H01L21/04 ,  H01L51/50

CPC classification number: H01L51/52 ,  B05D3/06 ,  H01L51/0002 ,  H01L51/0004 ,  H01L51/0012 ,  H01L51/56

Abstract: There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a priming layer; exposing the priming layer patternwise with radiation resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from either the exposed areas or the unexposed areas resulting in a first layer having a pattern of priming layer, wherein the pattern of priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid depositions on the pattern of priming layer on the first layer. There is also provided an organic electronic device made by the process.

Abstract translation: 提供了一种用于在第一层上形成包含的第二层的方法，包括以下步骤：形成具有第一表面能的第一层; 用起始层处理第一层; 以辐射模式曝光引发层，导致曝光区域和未曝光区域; 开发底漆层以有效地从曝光区域或未曝光区域去除底漆层，从而产生具有起泡层图案的第一层，其中底漆层的图案具有比第一表面能高的第二表面能 ; 以及通过在第一层上的起动层的图案上的液体沉积形成第二层。 还提供了通过该方法制造的有机电子装置。

公开(公告)号：US20100187508A1

公开(公告)日：2010-07-29

申请号：US12642116

申请日：2009-12-18

Applicant: Norman Herron ,  Weiying Gao ,  Adam Fennimore ,  Mark A. Guidry

Inventor： Norman Herron ,  Weiying Gao ,  Adam Fennimore ,  Mark A. Guidry

IPC: H01L51/54 ,  C07D209/82

CPC classification number: H01L51/006 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01L51/0072 ,  H01L51/5012 ,  H05B33/10 ,  H05B33/14

Abstract: This invention relates to anthracene derivatives that are useful in electroluminescent applications. It also relates to electronic devices in which the active layer includes such an anthracene derivative.

Abstract translation: 本发明涉及可用于电致发光应用的蒽衍生物。 它还涉及其中活性层包括这种蒽衍生物的电子器件。

公开(公告)号：US20060228287A1

公开(公告)日：2006-10-12

申请号：US11260021

申请日：2005-10-26

Applicant: Alex Zettl ,  Thomas Yuzvinsky ,  Adam Fennimore

Inventor： Alex Zettl ,  Thomas Yuzvinsky ,  Adam Fennimore

IPC: D01F9/12

CPC classification number: H01J37/317 ,  B82Y30/00 ,  H01J2237/317 ,  Y10S977/856 ,  Y10S977/888 ,  Y10S977/90

Abstract: Methods of shape modifying a nanodevice by contacting it with a low-energy focused electron beam are disclosed here. In one embodiment, a nanodevice may be permanently reformed to a different geometry through an application of a deforming force and a low-energy focused electron beam. With the addition of an assist gas, material may be removed from the nanodevice through application of the low-energy focused electron beam. The independent methods of shape modification and material removal may be used either individually or simultaneously. Precision cuts with accuracies as high as 10 nm may be achieved through the use of precision low-energy Scanning Electron Microscope scan beams. These methods may be used in an automated system to produce nanodevices of very precise dimensions. These methods may be used to produce nanodevices of carbon-based, silicon-based, or other compositions by varying the assist gas.

Abstract translation: 这里公开了通过使纳米器件与低能聚焦电子束接触来对纳米器件进行形状修饰的方法。 在一个实施例中，可以通过施加变形力和低能量聚焦电子束将纳米器件永久地重新形成为不同的几何形状。 通过添加辅助气体，可以通过施加低能聚焦电子束从纳米器件中去除材料。 形状修改和材料去除的独立方法可以单独使用或同时使用。 通过使用精密的低能量扫描电子显微镜扫描光束可以实现精度高达10 nm的精密切割。 这些方法可以用于自动化系统以产生非常精确尺寸的纳米器件。 这些方法可用于通过改变辅助气体来制备碳基，硅基或其它组合物的纳米器件。