公开(公告)号：US07199303B2

公开(公告)日：2007-04-03

申请号：US10221719

申请日：2001-03-13

Applicant: Akio Machida ,  Setsuo Usui ,  Kazumasa Nomoto

Inventor： Akio Machida ,  Setsuo Usui ,  Kazumasa Nomoto

IPC: H01N6/00

CPC classification number: H01L31/03682 ,  Y02E10/546

Abstract: An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.

Abstract translation: 光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及 其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。 第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。 在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。 通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

公开(公告)号：US07169690B2

公开(公告)日：2007-01-30

申请号：US11098846

申请日：2005-04-05

Applicant: Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

Inventor： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC: H01L21/20

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

Abstract: Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

Abstract translation: 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US06984552B2

公开(公告)日：2006-01-10

申请号：US10433849

申请日：2001-12-07

Applicant: Akio Machida ,  Setsuo Usui ,  Dharam Pal Gosain

Inventor： Akio Machida ,  Setsuo Usui ,  Dharam Pal Gosain

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/78621 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  H01L21/268 ,  H01L29/66757

Abstract: A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.

Abstract translation: 即使在使用低耐热性基板的情况下也形成了具有良好可控性的低浓度杂质扩散区域。 当掺杂半导体层时，在衬底上形成半导体层之后，通过在等离子体照射时引入氢气并激活半导体中的吸附掺杂剂离子来控制吸收在半导体层表面上的掺杂剂离子的量 层通过准分子激光器。

公开(公告)号：US06570223B1

公开(公告)日：2003-05-27

申请号：US09889603

申请日：2001-10-02

Applicant: Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

Inventor： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

IPC: H01L310392

CPC classification number: H01L29/78603 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

Abstract: A functional device and method of manufacturing the same are disclosed. A low-temperature softening layer and a heat-resistant layer are formed in this order on a substrate made of organic material such as polyethylene terephthalate, and a functional layer made of polysilicon is formed thereon. The functional layer is formed by crystallizing an amorphous silicon layer (precursor layer), with laser beam irradiation. When a laser beam is applied, heat causes the substrate to expand. However, stress caused by a difference in a thermal expansion coefficient between the substrate and the functional layer is absorbed by the low-temperature softening layer, so that no cracks and peeling occurs in the functional layer. The low-temperature softening layer is preferably made of a polymeric material containing acrylic resin. By properly interposing a metal layer and a heat-resistant layer between the substrate and the functional layer, a laser beam of higher intensity can be irradiated.

Abstract translation: 公开了一种功能器件及其制造方法。 在由聚对苯二甲酸乙二醇酯等有机材料构成的基板上依次形成低温软化层和耐热层，在其上形成由多晶硅构成的功能层。 功能层通过用激光束照射结晶非晶硅层（前体层）而形成。 当施加激光束时，加热导致基板膨胀。 然而，由基板和功能层之间的热膨胀系数的差异引起的应力被低温软化层吸收，使得在功能层中不会发生裂纹和剥离。 低温软化层优选由含有丙烯酸树脂的聚合材料制成。 通过在基板和功能层之间适当地插入金属层和耐热层，可以照射更高强度的激光束。

公开(公告)号：US06171871B2

公开(公告)日：2001-01-09

申请号：US09078678

申请日：1998-05-14

Applicant: Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

Inventor： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

IPC: H01L2100

CPC classification number: H01L27/11502 ,  H01L21/31691 ,  H01L27/11507

Abstract: It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.

Abstract translation: 旨在提供具有优异的铁电性的铁电体。 提供的铁电体是具有由Bi，第一元素Me，第二元素R和O组成的层状晶体结构的氧化物。第一元素Me是选自Na，K，Ca ，Ba，Sr，Pb和Bi。 第二元素R是选自Fe，Ti，Nb，Ta和W中的至少一种元素。铁电体全体的98％以上表现出铁电性。 在通过气相法（晶体生长步骤）生长具有层状晶体结构的氧化物之后，将电极附着到具有层状晶体结构的氧化物并施加电压（电压施加步骤）。 结果，至少部分地校正晶格的应变，由于由于失去晶格的对称性的这种大的应变，完全不显示铁电性的部分或者没有表现出优异的铁电性，从而表现出优异的铁电性 。

公开(公告)号：US5904766A

公开(公告)日：1999-05-18

申请号：US732923

申请日：1996-10-17

Applicant: Takaaki Ami ,  Katsuyuki Hironaka ,  Koji Watanabe ,  Akio Machida

Inventor： Takaaki Ami ,  Katsuyuki Hironaka ,  Koji Watanabe ,  Akio Machida

IPC: C01G35/00 ,  C04B35/495 ,  C30B25/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  C30B1/10

CPC classification number: C04B35/495 ,  C30B25/02 ,  C30B29/22

Abstract: Provided is a process for preparing a bismuth compound at a heat treatment temperature lower than conventional. A bismuth compound is prepared by the steps of heating under vacuum to form a reduced phase and heating under oxidizing environment of normal or lower pressure.

Abstract translation: 提供了在比常规低的热处理温度下制备铋化合物的方法。 通过在真空下加热以形成还原相并在正常或低压的氧化环境下加热的步骤制备铋化合物。

公开(公告)号：US08357620B2

公开(公告)日：2013-01-22

申请号：US12574024

申请日：2009-10-06

Applicant: Katsuji Takagi ,  Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Norio Fukasawa ,  Shinsuke Haga

Inventor： Katsuji Takagi ,  Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Norio Fukasawa ,  Shinsuke Haga

IPC: H01L21/00

CPC classification number: B23K26/03 ,  H01L22/26

Abstract: An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.

Abstract translation: 本发明的一个实施例提供了一种激光退火方法，包括以下步骤：扫描激光束为非晶膜时，在基板上的非晶膜上照射激光，使非晶膜结晶，检测从 基板和激光束的扫描速度，同时对非晶膜进行激光束的辐射和扫描，并且基于光量的比较结果控制激光束的辐射水平和扫描速度 从基板反射的激光束和激光束的扫描速度具有各自的预设参考。

公开(公告)号：US08089071B2

公开(公告)日：2012-01-03

申请号：US11683272

申请日：2007-03-07

Applicant: Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

Inventor： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC: H01L29/10

CPC classification number: H01L29/78696 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.

Abstract translation: 提供薄膜半导体器件。 半导体器件包括通过照射能量束而使活性区域变为多晶区域的半导体薄膜，以及配置为穿过有源区域的栅电极。 相继的晶粒边界在作为与栅电极重叠的有源区的沟道部分中沿着栅电极延伸，并且晶界穿过沟道部分并且沿沟道长度方向循环地设置。

公开(公告)号：US20090146535A1

公开(公告)日：2009-06-11

申请号：US12326353

申请日：2008-12-02

Applicant: Akio MACHIDA ,  Ryo Nakagawa ,  Yasuhide Matsuo

Inventor： Akio MACHIDA ,  Ryo Nakagawa ,  Yasuhide Matsuo

IPC: H01L41/053

CPC classification number: H01L41/107 ,  H01L41/053

Abstract: A piezoelectric transformer includes: a piezoelectric transducer on whose outer surface an electrode is formed; a case housing the piezoelectric transducer; a terminal disposed to face the electrode; an elastic member in contact with both the electrode and the terminal in the case and having conductivity to bring the electrode and the terminal into mutual continuity; and a folder formed in the case and fixedly holding the elastic member to press-fit the elastic member between the electrode and the terminal.

Abstract translation: 压电变压器包括：压电换能器，其外表面上形成有电极; 容纳压电换能器的壳体; 设置成面对电极的端子; 在壳体中与电极和端子接触的弹性构件，并且具有使电极和端子相互连续的导电性; 以及形成在壳体中的夹子，并且固定地保持弹性构件以将弹性构件压配合在电极和端子之间。

公开(公告)号：US07541615B2

公开(公告)日：2009-06-02

申请号：US11753949

申请日：2007-05-25

Applicant: Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

Inventor： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

IPC: H01L29/10

CPC classification number: H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

Abstract: A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.

Abstract translation: 提供包括驱动基板的显示器。 排列在驱动基板上的是用于驱动像素电极的多个像素电极和薄膜晶体管。 每个薄膜晶体管包括具有通过照射能量束而被制成多晶的有源区的半导体薄膜和设置成跨越有源区的栅电极。 在与栅极重叠的有源区的沟道部分中，晶体状态沿着沟道长度方向周期性变化，并且基本相同的晶体状态与沟道部分交叉。