公开(公告)号：US20230292624A1

公开(公告)日：2023-09-14

申请号：US17999578

申请日：2021-05-27

Applicant: CROCUS Technology SA

Inventor： Andrey Timopheev ,  Nikita Strelkov ,  Jeffrey Childress

IPC: H10N50/10 ,  H10N50/80

CPC classification number: H10N50/10 ,  H10N50/80

Abstract: A magnetic sensor including a plurality of magnetoresistive elements; each magnetoresistive element including a ferromagnetic layer having a magnetization that is orientable at or above a threshold temperature; the magnetic sensor further includes a plasmonic structure destined to be irradiated by electromagnetic radiation and including a spatially periodic plasmonic array of metallic structures. The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation. The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system including the sensor and an emitting device configured to emit electromagnetic radiation.

公开(公告)号：US11747411B2

公开(公告)日：2023-09-05

申请号：US17312558

申请日：2019-11-29

Applicant: Crocus Technology SA

Inventor： Andrey Timopheev ,  Romain Foissac

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A magnetic sensing circuit includes a circuit portion including: a main half-bridge including series-connected main tunnel magnetoresistive sensor elements TMR1 and TMR2; a first auxiliary half-bridge connected in parallel to the main half-bridge and including series-connected auxiliary tunnel magnetoresistive sensor elements TMR3 and TMR4 with an output voltage emerging from the connection between TMR1 and TMR3 and between TMR2 and TMR4; wherein a reference magnetization of the magnetoresistive sensor element TMR1 and TMR3 are respectively oriented substantially antiparallel with respect to a reference magnetization of the magnetoresistive sensor element TMR2 and TMR4; and wherein said first auxiliary half-bridge has a sensing axis that differs from the sensing axis of the main half bridge by an angle of about 180°/n, where n is the harmonic number to be canceled. The magnetic sensing circuit allows for sensing of external magnetic fields having high magnitude, with reduced angular error.

公开(公告)号：US20230127582A1

公开(公告)日：2023-04-27

申请号：US17905352

申请日：2021-03-02

Applicant: CROCUS Technology SA

Inventor： Clarisse Ducruet ,  Léa Cuchet ,  Jeffrey Childress

IPC: G01R33/09 ,  H10N50/85 ,  H10N50/10 ,  H01F10/32

Abstract: A magnetoresistive element for a two-dimensional magnetic field sensor, including: a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers; the reference layer including a reference coupling layer between a reference pinned layer and a reference coupled layer; the reference coupled layer including a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer, a third coupled sublayer and a insert layer between the second and third coupled sublayers; the insert layer comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer is between about 1 nm and about 5 nm.

公开(公告)号：US20220268815A1

公开(公告)日：2022-08-25

申请号：US17597352

申请日：2020-06-26

Applicant: Crocus Technology SA

Inventor： Andrey Timopheev

IPC: G01R15/20 ,  G01R33/00 ,  G01R33/09

Abstract: Magnetic current sensor, including: a sensor bridge circuit including a first and second half-bridges, each including two series-connected and diagonally opposed tunnel magnetoresistive (TMR) sensor elements, the TMR sensor elements including a reference layer oriented a single predetermined direction and a sense layer having a sense magnetization; a field line configured for passing a field current generating a magnetic field adapted for orienting the sense magnetization of the diagonally opposed TMR sensor elements of the first half-bridge and of the diagonally opposed TMR sensor elements of the second half-bridge in an opposite direction; such that a non-null differential voltage output between the TMR sensor elements of the first half-bridge and the TMR sensor elements of the second half-bridge is measurable when the field current is passed in the field line; the differential voltage output being insensitive to the presence of an external uniform magnetic field.

公开(公告)号：US20220196764A1

公开(公告)日：2022-06-23

申请号：US17605069

申请日：2020-04-23

Applicant: Crocus Technology SA

Inventor： Salim Dounia ,  Claire Baraduc ,  Bernard Dieny

IPC: G01R33/09

Abstract: Magnetic element including a first ferromagnetic layer having a first magnetization including a stable magnetization vortex configuration having a vortex core. The first ferromagnetic layer includes an indentation configured such that the vortex core nucleates substantially at the indentation. Upon application of an external magnetic field in a first field direction, the vortex core moves along a first path and the first magnetization rotates around the vortex core in a counterclockwise direction. Upon application of the external magnetic field in a second field direction opposed to the first field direction, the vortex core moves along a second path and the first magnetization rotates around the vortex core in a clockwise direction. Both the first and second field path are substantially identical and move the vortex core away from the indentation.

公开(公告)号：US20210334482A1

公开(公告)日：2021-10-28

申请号：US17299949

申请日：2019-11-29

Applicant: Crocus Technology SA

Inventor： Ali Alaoui ,  Ates Gurcan

IPC: G06K7/08

Abstract: A reader device for reading information stored on a magnetic strip containing a plurality of polarized magnets, each providing a magnetic flux, said reader device including: a magnetoresistive sensor including a plurality of magnetoresistive elements and configured for reading the information stored on the magnetic strip and outputting a read signal; a processing module configured for decoding the read signal and extracting binary data; wherein the read signal includes amplitude information of the magnetic flux; and wherein the processing module is further configured for decoding the read signal using the amplitude information of the read signal is described. Further, an amplitude decoding method for decoding the read signal outputted by the reader device is described.

公开(公告)号：US10663537B2

公开(公告)日：2020-05-26

申请号：US15481805

申请日：2017-04-07

Applicant: CROCUS Technology SA

Inventor： Jeffrey Childress ,  Romain Foissac ,  Kenneth MacKay

IPC: G01R33/09 ,  G01R33/00

Abstract: A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.

公开(公告)号：US20190081602A1

公开(公告)日：2019-03-14

申请号：US16084637

申请日：2017-03-15

Applicant: Crocus Technology SA

Inventor： Yann Conraux ,  Quentin Stainer

IPC: H03F15/00 ,  H03G7/00 ,  H01L43/08

Abstract: A magnetoresistive-based signal shaping circuit for audio applications includes: a field emitting device configured for receiving an input current signal from an audio signal source and for generating a magnetic field in accordance with the input current signal, and a first magnetoresistive element having a first electrical resistance and electrically connected in series to a second magnetoresistive element having a second electrical resistance. The magnetoresistive-based signal shaping device provides an output signal across the second magnetoresistive element when an input voltage is applied across the first and second magnetoresistive element in series. The output signal is a function of the electrical resistance and yields a dynamic range compression effect. The first and second electrical resistance vary with the magnetic field in an opposite fashion.

公开(公告)号：US20190036015A1

公开(公告)日：2019-01-31

申请号：US16083163

申请日：2017-03-06

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: H01L43/08 ,  H01F10/32 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/12

Abstract: A magnetoresistive element including: a storage layer having a first storage magnetostriction; a sense layer having a first sense magnetostriction; and a barrier layer between and in contact with the storage and sense layer. The magnetoresistive element also includes a compensating ferromagnetic layer having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer and/or sense layer is adjustable between −10 ppm and +10 ppm or more negative than −10 ppm by adjusting a thickness of the compensating ferromagnetic layer. The present disclosure also concerns a magnetic device comprising the magnetoresistive element.

公开(公告)号：US20180336014A1

公开(公告)日：2018-11-22

申请号：US15552508

申请日：2016-02-22

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera ,  Quentin Stainer

IPC: G06F7/58

CPC classification number: G06F7/588

Abstract: A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.