Abstract:
A flat panel display capable of lowering an on-current of a driving thin film transistor (TFT), maintaining high switching properties of a switching TFT, maintaining uniform brightness using the driving TFT, and maintaining a life span of a light emitting device while the same voltages are applied to the switching TFT and the driving TFT without changing a size of an active layer. The flat panel display includes a light emitting device, a switching thin film transistor including a semiconductor active layer having a channel area for transferring a data signal to the light emitting device, and a driving thin film transistor including a semiconductor active layer having a channel area for driving the light emitting device. A predetermined amount of current flows through the light emitting device according to the data signal. The channel area of the switching thin film transistor has crystal grains with at least one of different sized or different shaped crystal grains than the crystal grains in the channel area of the driving thin film transistor.
Abstract:
A solid titanium complex catalyst for polymerization and copolymerization of ethylene is prepared by the process comprising: (1) preparing a magnesium solution by reacting a halogenated magnesium compound with an alcohol; (2) reacting the magnesium solution with a phosphorus compound and a silicon compound having at least one alkoxy group to produce a magnesium composition; and (3) producing a solid titanium catalyst through recrystallization by reacting the magnesium composition solution with a mixture of a titanium compound and a haloalkane compound; and optionally reacting the solid titanium catalyst with an additional titanium compound. The solid titanium complex catalyst for polymerization and copolymerization of ethylene according to present invention exhibits high polymerization activity, and may be advantageously used in the polymerization and copolymerization of ethylene to produce polymers of high bulk density and narrow molecular weight distribution.
Abstract:
The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherein the mask comprises two or more of dot pattern groups in which the non-transmission pattern group is perpendicular to a scan directional axis, and the dot pattern groups are formed in a certain shape and comprise first non-transmission patterns that are not respectively arranged in a row in an axis direction perpendicular to the scan directional axis, and second non-transmission patterns that are formed in the same arrangement as the first non-transmission patterns, but are positioned in such a manner that the second non-transmission patterns are parallel to the first non-transmission patterns and vertical axis of the scan directional axis.
Abstract:
A flat panel display capable of lowering an on-current of a driving thin film transistor (TFT), maintaining high switching properties of a switching TFT, maintaining uniform brightness using the driving TFT, and maintaining a life span of a light emitting device while the same voltages are applied to the switching TFT and the driving TFT without changing a size of an active layer. The flat panel display includes a light emitting device, a switching thin film transistor including a semiconductor active layer having a channel area for transferring a data signal to the light emitting device, and a driving thin film transistor including a semiconductor active layer having a channel area for driving the light emitting device. A predetermined amount of current flows through the light emitting device according to the data signal. The channel area of the switching thin film transistor has crystal grains with at least one of different sized or different shaped crystal grains than the crystal grains in the channel area of the driving thin film transistor.
Abstract:
A supercooling refrigerator (1000) including: a refrigerator body (100); a door (200) for opening and closing one side of the refrigerator body (100); an accommodating portion (400) provided inside the refrigerator body (100) and seated with an object (M) to be stored; a cooling duct (600) including a fan for taking in air in the refrigerator body (100) and discharging the air, and an evaporator (630) for cooling the air discharged from the fan; and a cool air supply duct (700) formed with a cool air discharge port (710) through which the air cooled through the cooling duct (600) is discharged into the refrigerator body (100), the fan being a cross flow fan (620) including a plurality of discs (622), and a plurality of blades (623) disposed between the discs (622) along outer circumferential surfaces of the discs (622).
Abstract:
The present invention relates to a design structure of an apartment house in which a plurality of apartment units, each of which is a maisonette in which two floors including an upper floor and a lower floor are combined into a single apartment unit, are repeatedly arranged in vertical and horizontal directions, wherein, in the design structure, each apartment unit has a living room disposed on the upper floor and a plurality of bedrooms disposed on the lower floor, double pillars spaced apart from each other are installed on side boundaries of adjacent apartment units, the double pillars include a pair of first pillars disposed inside an apartment unit and a pair of second pillars disposed outside the apartment unit and disposed inside another apartment unit adjacent thereto, a first beam member, which serves as a structure carrying a load, is connected to and installed at the first pillar, a second beam member, which serves as a structure carrying a load, is connected to and installed at the second pillar, and a double pillar connecting beam configured to connect the first pillar and the second pillar is additionally provided on a side surface of a slab of the lower floor.
Abstract:
Disclosed herein is a pumping apparatus for a vehicle seat, which includes an input member rotated by torque input from a handle lever, a clutch unit configured to transmit the input torque to a link mechanism of a seat cushion, a brake unit configured to cut off the torque input in reverse from the link mechanism, a housing accommodating the clutch unit therein, and a fixing member coupled to a rear end of the housing, wherein the input member includes a first input member disposed in front of the housing, and a second input member connected to the first input member and accommodated in the housing, and the clutch unit includes a torque transmission member arranged on an outer peripheral surface of the second input member, and an annular control member having a clutch friction surface formed on an inner peripheral surface thereof.
Abstract:
A thin film transistor, a manufacturing method thereof, and a display device having the same are disclosed. The thin film transistor includes a semiconductor layer formed on a substrate, a gate insulating layer formed on the substrate including the semiconductor layer, a gate electrode formed on the gate insulating above the semiconductor layer, source and drain electrodes connected to the semiconductor layer, and 3.5 to 4.5 protrusions formed on the semiconductor layer overlapped with the gate electrode. Malfunction of the thin film transistor and inferior image quality of the display device can be prevented by adjusting the number of protrusions to minimize leakage current and defects.
Abstract:
A display device capable of implementing the light shielding effect and process simplification, and a method of manufacturing the display device. The display device includes a transistor formed in a first region on a substrate, a pixel electrode formed in a second region on the substrate, a buffer layer formed beneath the transistor in the first region, and a light shielding layer formed between the buffer layer and the substrate in the first region. In the display device, the light shielding layer may include a semiconductor material.
Abstract:
A Layer 2 network switch is partitionable into a plurality of switch fabrics. The single-chassis switch is partitionable into a plurality of logical switches, each associated with one of the virtual fabrics. The logical switches behave as complete and self-contained switches. A logical switch fabric can span multiple single-chassis switch chassis. Logical switches are connected by inter-switch links that can be either dedicated single-chassis links or logical links. An extended inter-switch link can be used to transport traffic for one or more logical inter-switch links. Physical ports of the chassis are assigned to logical switches and are managed by the logical switch. Legacy switches that are not partitionable into logical switches can serve as transit switches between two logical switches.