公开(公告)号：US20220064488A1

公开(公告)日：2022-03-03

申请号：US17415704

申请日：2019-11-04

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Jung Yoon KIM ,  Hae Won YANG ,  Soo Wan CHOI

IPC: C09G1/02 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

公开(公告)号：US20210163785A1

公开(公告)日：2021-06-03

申请号：US16954338

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Kwang Soo PARK ,  Hae Won YANG

IPC: C09G1/02 ,  H01L21/762 ,  H01L21/3105 ,  C08L77/00 ,  C08G73/02

Abstract: The present invention relates to a polishing slurry composition for an STI process and, more particularly, to a polishing slurry composition for an STI process, the composition comprising: a polishing solution including polishing particles; and an additive solution containing a polysilicon film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US20210009859A1

公开(公告)日：2021-01-14

申请号：US16918139

申请日：2020-07-01

Applicant: KCTECH CO., LTD.

Inventor： Ji Hye KIM ,  Bo Hyeok CHOI ,  Jae Woo LEE ,  Jae Ik LEE

IPC: C09G1/02 ,  C09K3/14

Abstract: A chemical mechanical polishing (CMP) slurry composition for polishing multiple films and a polishing method using the CMP slurry composition are provided. The CMP slurry composition includes abrasive particles, a surface roughness modifier including a water-soluble polymer, a polishing regulator including an organic acid, and a polishing profile improving agent including a nonionic surfactant.

公开(公告)号：US10711160B2

公开(公告)日：2020-07-14

申请号：US15883655

申请日：2018-01-30

Applicant: Samsung Electronics Co., Ltd. ,  KCTECH CO., LTD.

Inventor： Seung Ho Park ,  Hyun Goo Kong ,  Jung Hun Kim ,  Sang Mi Lee ,  Woo In Lee ,  Hee Sook Cheon ,  Sang Kyun Kim ,  Hao Cui ,  Jong Hyuk Park ,  Il Young Yoon

IPC: H01L21/3205 ,  C09G1/02 ,  H01L21/28 ,  H01L21/321 ,  H01L27/108

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.

公开(公告)号：US20200164486A1

公开(公告)日：2020-05-28

申请号：US16575176

申请日：2019-09-18

Applicant: KCTECH CO., LTD.

Inventor： Huiseong CHE

IPC: B24B49/10 ,  B24B37/005 ,  B24B37/26 ,  H01L21/67 ,  B24B53/017

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus comprises a polishing table; a polishing pad disposed on an upper surface of the polishing table; a conditioner including a conditioner head, a disk holder movably coupled to the conditioner head in a vertical direction, and a conditioning disk mounted to the disk holder and in contact with the polishing pad; and a thickness measuring unit of obtaining the thickness of the polishing pad from the relative moving distance of the disk holder with respect to the conditioner head, wherein the information of the relative moving distance is received from sensing unit.

公开(公告)号：US20200009703A1

公开(公告)日：2020-01-09

申请号：US16416736

申请日：2019-05-20

Applicant: KCTECH CO., LTD.

Inventor： Jong-Tae JOO ,  Sang Hyun KIM ,  Ho Cheon JEONG ,  Jae Yeol KIM

IPC: B24B37/005 ,  B24B37/30

Abstract: The present invention relates to a substrate polishing system comprising a polishing pad covered on the polishing platen; a plurality of substrate carriers including a first substrate carrier which moves in a state in which a substrate is mounted and performs a polishing process in a state in which the substrate is in contact with the polishing pad on the polishing pad; a monitoring unit of displaying the information including the identity, position of at least one of the substrate carriers; and a control unit of outputting a warning signal and/or changes the operation of operating devices when an error occurs in real time thereby improving the monitoring efficiency and operation reliability of the polishing process of the substrate.

公开(公告)号：US20190316003A1

公开(公告)日：2019-10-17

申请号：US16302604

申请日：2017-04-14

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Sun Kyoung KIM ,  Kwang Soo PARK

IPC: C09G1/02 ,  C09K13/00 ,  C09K3/14

Abstract: The present invention relates to a slurry composition for polishing a high stepped region. The slurry composition for polishing a high stepped region according to an embodiment of the present invention comprises: a polishing liquid containing metal oxide abrasive particles dispersed by positive charges; and an additive liquid containing a polymer comprising at least one element capable of being activated as a positive charge, wherein the polishing selection ratio of the stepped region removal rate in an oxide film pattern wafer having convex portions and concave portions and the stepped region removal rate in an oxide film flat wafer is at least 5:1.

公开(公告)号：US20190211245A1

公开(公告)日：2019-07-11

申请号：US16331137

申请日：2017-06-21

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Kwang Soo PARK ,  Jung Yoon KIM ,  Jun Ha HWANG

IPC: C09K3/14

CPC classification number: C09K3/1436 ,  C09G1/02 ,  C09K3/14 ,  C09K3/1409

Abstract: The present invention relates to surface-modified colloidal ceria abrasive particles, a preparation method therefor, and a polishing slurry composition containing the same. According to one embodiment of the present invention, the surface-modified colloidal ceria abrasive particles comprise: colloidal ceria abrasive particles; and cerium atoms and hydroxyl groups (—OH) formed on the surface of the colloidal ceria abrasive particles.

公开(公告)号：US20250145859A1

公开(公告)日：2025-05-08

申请号：US18938313

申请日：2024-11-06

Applicant: KCTECH CO., LTD.

Inventor： Ji Hye KIM ,  Jae Ik LEE ,  Dam Bi KIM ,  Bo Hyeok CHOI

IPC: C09G1/02 ,  C09K3/14

Abstract: A slurry composition for chemical mechanical polishing (CMP) is provided. The slurry composition includes colloidal silica particles, at least one nonionic compound among dextran, dextrose, and dextrin, an amino acid, a pH buffer, and a pH adjuster. The slurry composition may have a pH of 1 to 4.

公开(公告)号：US20250026960A1

公开(公告)日：2025-01-23

申请号：US18715108

申请日：2022-12-01

Applicant: KCTECH CO.,LTD.

Inventor： Bo Hyeok CHOI ,  Hyun Goo KONG ,  Ji Hye KIM

IPC: C09G1/02

Abstract: The present invention relates to a polishing slurry composition, and more specifically to a polishing slurry composition for polysilicon polishing, the composition comprising: colloidal silica abrasive particles; a quaternary ammonium cationic monomer; and an acidic material.