公开(公告)号：US08706977B2

公开(公告)日：2014-04-22

申请号：US12967356

申请日：2010-12-14

Applicant: Ki Yong Lee ,  Jae Kyong Choi

Inventor： Ki Yong Lee ,  Jae Kyong Choi

IPC: G06F12/02

CPC classification number: G06F9/544

Abstract: A method for inter-processor communication in a mobile terminal is disclosed. The method of inter-processor communication for a mobile terminal having a first processor, a second processor, and a shared memory includes determining, by the first processor, the size of data to be sent to the second processor, comparing the determined size of the data with the size of one of multiple buffer areas in the shared memory to be used for transmission, rearranging the shared memory according to the data size when the size of the data is greater than the size of the buffer area to be used, and sending the data to the second processor through the rearranged shared memory. It is possible to increase data transfer rates between processors when inter-processor communication is performed through a shared memory in a mobile terminal having multiple processors.

Abstract translation: 公开了一种用于移动终端中的处理器间通信的方法。 具有第一处理器，第二处理器和共享存储器的移动终端的处理器间通信的方法包括由第一处理器确定要发送到第二处理器的数据的大小，将确定的 具有要用于传输的共享存储器中的多个缓冲区之一的大小的数据，当数据的大小大于要使用的缓冲区的大小时，根据数据大小重新排列共享存储器，并且发送 通过重新布置的共享存储器将数据提供给第二处理器。 当通过具有多个处理器的移动终端中的共享存储器执行处理器间通信时，可以增加处理器之间的数据传输速率。

公开(公告)号：US20140084268A1

公开(公告)日：2014-03-27

申请号：US13962105

申请日：2013-08-08

Applicant: Yong-Duck SON ,  Ki-Yong LEE ,  Jin-Wook SEO ,  Min-Jae JEONG ,  Tak-Young LEE

Inventor： Yong-Duck SON ,  Ki-Yong LEE ,  Jin-Wook SEO ,  Min-Jae JEONG ,  Tak-Young LEE

IPC: H01L29/786 ,  H01L51/52 ,  H01L21/02

CPC classification number: H01L29/78672 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L51/52

Abstract: A method of forming a polysilicon film includes: forming an amorphous silicon film on a substrate; adsorbing a metal catalyst on the amorphous silicon film, crystallizing the amorphous silicon film through heat treatment to form the polysilicon film, the polysilicon film including a grain internal region and a grain boundary where the metal catalyst remains, providing an etchant having different oxidation selectivities with respect to the grain internal region and the grain boundary, and etching a surface of the polysilicon film by the etchant to remove the metal catalyst remaining on the grain boundary.

Abstract translation: 形成多晶硅膜的方法包括：在基板上形成非晶硅膜; 在非晶硅膜上吸附金属催化剂，通过热处理使非晶硅膜结晶以形成多晶硅膜，该多晶硅膜包括晶粒内部区域和金属催化剂保留的晶界，提供具有不同氧化选择性的蚀刻剂， 相对于晶粒内部区域和晶界，并且通过蚀刻剂蚀刻多晶硅膜的表面以去除残留在晶界上的金属催化剂。

公开(公告)号：US08580677B2

公开(公告)日：2013-11-12

申请号：US13739866

申请日：2013-01-11

Applicant: Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

Inventor： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

IPC: H01L21/4763

CPC classification number: H01L29/66742 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/66757 ,  H01L29/78618 ,  H01L51/0081

Abstract: A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

Abstract translation: 一种包括薄膜晶体管的基板，所述基板包括设置在所述基板上的有源层，所述有源层包括沟道区域和源极和漏极区域，设置在所述有源层上的栅极电极，对应于所述栅电极的沟道区域， 插入在有源层和栅电极之间的栅极绝缘层，设置成覆盖有源层和栅电极的层间绝缘层，具有部分地暴露有源层的第一和第二接触孔的层间绝缘层，设置的源极和漏极 在层间绝缘层上，对应于源极和漏极以及欧姆接触层的源极和漏极区域，欧姆接触层介于层间绝缘层和源极和漏极之间，并且使源极和漏极区域通过 第一和第二接触孔。

公开(公告)号：US08569764B2

公开(公告)日：2013-10-29

申请号：US12045172

申请日：2008-03-10

Applicant: Byoung-Keon Park ,  Tae-hoon Yang ,  Jin-Wook Seo ,  Sei-Hwan Jung ,  Ki-Yong Lee

Inventor： Byoung-Keon Park ,  Tae-hoon Yang ,  Jin-Wook Seo ,  Sei-Hwan Jung ,  Ki-Yong Lee

IPC: H01L29/10

CPC classification number: H01L29/78615 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/3244

Abstract: A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer.

公开(公告)号：US20130185321A1

公开(公告)日：2013-07-18

申请号：US13528292

申请日：2012-06-20

Applicant: Seung-Woo RYU ,  Seok-Jin Hong ,  Kyoung-Gu Woo ,  Ki-Yong Lee

Inventor： Seung-Woo RYU ,  Seok-Jin Hong ,  Kyoung-Gu Woo ,  Ki-Yong Lee

IPC: G06F17/30

CPC classification number: G06F17/30516

Abstract: An apparatus and a method of optimizing queries through scheduling User Defined Operators (UDOs) in a Data Stream Management System (DSMS), are provided. The apparatus includes a query optimizer configured to receive queries, each of the queries including the UDOs and data streams subject to respective operations of the UDOs, and group the data streams and UDOs into scheduling units, each of the scheduling units including one of the data streams and one of the UDOs. The apparatus further includes a scheduler configured to schedule an execution order in which the scheduling units are executed.

Abstract translation: 提供了一种通过调度数据流管理系统（DSMS）中的用户定义运算符（UDO）来优化查询的设备和方法。 该装置包括：查询优化器，被配置为接收查询，每个查询包括UDO和经受UDO各自操作的数据流，并将数据流和UDO分组成调度单元，每个调度单元包括数据之一 流和其中一个UDO。 该装置还包括调度器，其被配置为调度其中执行调度单元的执行顺序。

公开(公告)号：US08334536B2

公开(公告)日：2012-12-18

申请号：US12048662

申请日：2008-03-14

Applicant: Kyoung-Bo Kim ,  Kil-Won Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Moo-Jin Kim

Inventor： Kyoung-Bo Kim ,  Kil-Won Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Moo-Jin Kim

IPC: H01L29/04

CPC classification number: H01L29/78675 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/66757

Abstract: A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method.

Abstract translation: 薄膜晶体管及其制造方法包括：具有通过薄射束定向结晶法形成的具有15nm以下的顶面的高度变化的晶体生长方向的晶界的半导体层。 此外，提供了包括薄膜晶体管的有机发光二极管（OLED）显示装置，并且具有通过简单的工艺制造的优异特性。 此外，提供了一种平板显示装置及其制造方法，包括：像素区域中的多晶硅层; 以及通过薄束定向结晶法形成的周边区域中的多晶硅层。 此外，半导体器件及其制造方法包括：通过薄射束定向结晶法形成的光电二极管区域中的半导体层的本征区域。

公开(公告)号：US20120313114A1

公开(公告)日：2012-12-13

申请号：US13200383

申请日：2011-09-23

Applicant: Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC: H01L51/50 ,  H01L29/786 ,  H01L51/40 ,  H01L21/336

CPC classification number: H01L27/3244 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A method of manufacturing a thin film transistor (TFT), a TFT manufactured by the method, a method of manufacturing an organic light-emitting display apparatus that includes the TFT, a display including the TFT. By including a buffer layer below and an insulating layer above a silicon layer for the TFT, the silicon layer can be crystallized without being exposed to air, so that contamination can be prevented. Also, due to the overlying insulating layer, the silicon layer can be patterned without directly contacting photoresist. The result is a TFT with uniform and improved electrical characteristics, and an improved display apparatus.

Abstract translation: 一种制造薄膜晶体管（TFT）的方法，通过该方法制造的TFT，制造包括TFT的有机发光显示装置的方法，包括TFT的显示器。 通过在TFT的下方包含缓冲层和在硅层上方的绝缘层，硅层可以结晶而不暴露于空气，从而可以防止污染。 此外，由于上覆绝缘层，可以将硅层图案化而不直接接触光致抗蚀剂。 结果是具有均匀和改善的电特性的TFT和改进的显示装置。

公开(公告)号：US20120298501A1

公开(公告)日：2012-11-29

申请号：US13440638

申请日：2012-04-05

Applicant: Yun-Mo CHUNG ,  Ki-Yong LEE ,  Min-Jae JEONG

Inventor： Yun-Mo CHUNG ,  Ki-Yong LEE ,  Min-Jae JEONG

IPC: C23C14/34 ,  C23C14/08

CPC classification number: C23C14/352 ,  H01J37/32568 ,  H01J37/3417

Abstract: A separated target apparatus includes a base plate; and a plurality of source units including a plurality of separated targets that are adhered on one surface of the base plate and that form a regular array, and a plurality of magnets that are adhered on the other surface of the base plate and that make a pair with the plurality of separated targets. The plurality of source units are arrayed in parallel at an angle between a first direction that is a direction of the regular array and a second direction that is perpendicular to the first direction. Sputtering is performed by using the separated target apparatus having the aforementioned structure.

Abstract translation: 分离的目标装置包括基板; 以及多个源单元，其包括粘附在所述基板的一个表面上并形成规则阵列的多个分离的靶，以及多个磁体，所述多个磁体粘附在所述基板的另一个表面上并且成对 与多个分离的目标。 多个源单元以规则阵列的方向的第一方向和垂直于第一方向的第二方向之间的角度平行排列。 通过使用具有上述结构的分离的目标装置进行溅射。

公开(公告)号：US08155694B2

公开(公告)日：2012-04-10

申请号：US12237523

申请日：2008-09-25

Applicant: Ki Yong Lee

Inventor： Ki Yong Lee

IPC: H04M1/00

CPC classification number: H04W48/18 ,  H04W88/06

Abstract: A dual standby mode mobile terminal having a single smart card slot and communication mode control method thereof is provided for enabling the mobile terminal to operate in dual standby mode with a single smart card. A dual standby mode mobile terminal includes a first control unit for controlling a first communication mode, a second control unit for controlling a second communication mode, a removable dual mode smart card containing first and second communication mode data, and a buffer for loading the first and second communication mode data. A communication mode control method for the dual standby mode mobile terminal includes loading the first and second communication mode data in the buffer from the dual mode smart card under the control of the first control unit, detecting an event requiring communication mode data provided by the dual mode smart card, determining whether the communication data are any of the first and second communication mode data loaded in the buffer, and executing the event using the communication mode data loaded in the buffer. The dual standby mode mobile terminal and communication mode control method thereof enables the mobile terminal to stand by in two different communication modes (e.g. GSM and CDMA modes) with a single smart card.

Abstract translation: 提供具有单个智能卡插槽的双待机模式移动终端及其通信模式控制方法，用于使得移动终端能够在具有单个智能卡的双待机模式下工作。 双待机模式移动终端包括用于控制第一通信模式的第一控制单元，用于控制第二通信模式的第二控制单元，包含第一和第二通信模式数据的可移动双模智能卡，以及用于加载第一通信模式的缓冲器 和第二通信模式数据。 一种用于双待机模式移动终端的通信模式控制方法，包括在第一控制单元的控制下，从双模式智能卡中将缓冲器中的第一和第二通信模式数据加载到第一控制单元的控制中，检测需要通过双重智能卡提供的通信模式数据的事件 确定通信数据是否是加载在缓冲器中的第一和第二通信模式数据中的任何一个，以及使用加载在缓冲器中的通信模式数据来执行该事件。 双待机模式移动终端及其通信模式控制方法使得移动终端能够以具有单个智能卡的两种不同通信模式（例如，GSM和CDMA模式）等待。

公开(公告)号：US08125033B2

公开(公告)日：2012-02-28

申请号：US11636962

申请日：2006-12-12

Applicant: Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park

Inventor： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park

IPC: H01L21/20

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L27/1277

Abstract: A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and a method of fabricating the same are provided. The polycrystalline silicon layer is formed by crystallizing a seed region of an amorphous silicon layer using a super grain silicon (SGS) crystallization technique. The crystallinity of the seed region spread into a crystallization region beyond the seed region. The crystallization region is formed into a semiconductor layer that can be incorporated to make a thin film transistor to drive flat panel displays. The semiconductor layer made by the method of the present invention provides uniform growth of grain boundaries, and characteristics of a thin film transistor made of the semiconductor layer are improved.

Abstract translation: 提供多晶硅层，使用多晶硅层的平板显示器及其制造方法。 通过使用超晶硅（SGS）结晶技术使非晶硅层的晶种区域结晶来形成多晶硅层。 种子区域的结晶度扩展到晶种区域之外的结晶区域。 结晶区域形成为可以结合以制造薄膜晶体管以驱动平板显示器的半导体层。 通过本发明的方法制成的半导体层提供了晶界的均匀生长，并且改善了由半导体层制成的薄膜晶体管的特性。