公开(公告)号：US07692516B2

公开(公告)日：2010-04-06

申请号：US11722299

申请日：2005-12-20

Applicant: Young-Tae Kim ,  Han-Cheol Ryu ,  Min-Hwan Kwak ,  Seung-Eon Moon ,  Su-Jae Lee ,  Kwang-Yong Kang

Inventor： Young-Tae Kim ,  Han-Cheol Ryu ,  Min-Hwan Kwak ,  Seung-Eon Moon ,  Su-Jae Lee ,  Kwang-Yong Kang

IPC: H01P1/18 ,  H01P3/08

CPC classification number: H01P1/2005 ,  H01P1/181

Abstract: Provided are a phase shifter with a photonic band gap (PBG) structure using a ferroelectric thin film. The phase shifter includes a microstrip transmission line acting as a microwave input/output line and a plurality of tunable capacitors arranged in the microstrip transmission line at regular intervals. Electrodes disposed on a substrate apply DC voltages to the plurality of tunable capacitors. Radio frequency (RF) chokes and quarter wavelength radial-stubs are connected between the electrodes and the microstrip transmission line in order to prevent high frequency signals from flowing into a DC bias terminal. A plurality of PBGS are periodically arrayed on a ground plane of the substrate.

Abstract translation: 提供一种使用铁电薄膜的具有光子带隙（PBG）结构的移相器。 移相器包括用作微波输入/输出线的微带传输线和以规则间隔布置在微带传输线中的多个可调谐电容器。 设置在基板上的电极向多个可调谐电容器施加直流电压。 射频（RF）扼流圈和四分之一波长径向短截线连接在电极和微带传输线之间，以防止高频信号流入直流偏置端。 多个PBGS周期性排列在基板的接地平面上。

公开(公告)号：US20080297358A1

公开(公告)日：2008-12-04

申请号：US12090084

申请日：2006-06-27

Applicant: Hyun-Tak Kim ,  Kwang Yong Kang ,  Yong Wook Lee ,  Byung Gyu Chae ,  Bong Jun Kim ,  Sang Kuk Choi ,  Sun Jin Yun

Inventor： Hyun-Tak Kim ,  Kwang Yong Kang ,  Yong Wook Lee ,  Byung Gyu Chae ,  Bong Jun Kim ,  Sang Kuk Choi ,  Sun Jin Yun

IPC: G08B17/06 ,  G01K7/16

CPC classification number: G01K3/005 ,  G01K7/22

Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.

Abstract translation: 提供了使用在特定温度下经受突然MIT的金属 - 绝缘体转变（MIT）装置的温度传感器和包括温度传感器的警报。 突变的MIT装置包括突变的MIT薄膜和至少两个接触突变的MIT薄膜的电极薄膜。 突变MIT器件在特定转变温度下产生突然的金属 - 绝缘体转变。 报警装置包括一个温度传感器，它包括一个突然的MIT装置，和一个串联连接到温度传感器的报警信号装置。 因此，通过使用突然的MIT装置包括温度传感器，可以将报警器制造成具有简单的电路并且尺寸小。

公开(公告)号：US20080284314A1

公开(公告)日：2008-11-20

申请号：US12096595

申请日：2006-11-27

Applicant: Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

Inventor： Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

IPC: H01J1/62 ,  G09G3/12 ,  G09G3/20

CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/319

Abstract: Provided is a field emission display (FED) capable of driving on the basis of current and preventing leakage current caused by thin film transistors (TFTs). The FED includes: a plurality of unit pixels including an emission element in which cathode luminescence of a phosphor occurs and a TFT for driving the emission element; a current source for applying a scan signal to each unit pixel; and a voltage source for applying a data signal to each unit pixel. Here, the on-current of the current source is high enough to take care of the load resistance and capacitance of a scan row within a given writing time, and the off-current of the current source is so low that the electron emission of each pixel can be ignored. In addition, the pulse amplitude or pulse width of the data signal applied from the voltage source is changed, and thereby the gray scale of the display is represented.

Abstract translation: 提供了能够基于电流驱动并防止由薄膜晶体管（TFT）引起的漏电流的场致发射显示器（FED）。 FED包括：多个单位像素，包括其中发生荧光体的阴极发光的发射元件和用于驱动发光元件的TFT; 用于向每个单位像素施加扫描信号的电流源; 以及用于将数据信号施加到每个单位像素的电压源。 这里，电流源的导通电流足够高，以便在给定的写入时间内照顾扫描行的负载电阻和电容，并且电流源的截止电流非常低以致每个电流源的电子发射 像素可以忽略。 此外，改变从电压源施加的数据信号的脉冲幅度或脉冲宽度，从而表示显示器的灰度级。

公开(公告)号：US20080142900A1

公开(公告)日：2008-06-19

申请号：US12021764

申请日：2008-01-29

Applicant: Hyun Tak KIM ,  Kwang Yong KANG ,  Bong Jun KIM ,  Yong Wook LEE ,  Sun Jin YUN ,  Byung Gyu CHAE ,  Gyung Ock KIM

Inventor： Hyun Tak KIM ,  Kwang Yong KANG ,  Bong Jun KIM ,  Yong Wook LEE ,  Sun Jin YUN ,  Byung Gyu CHAE ,  Gyung Ock KIM

IPC: H01L29/76

CPC classification number: H01L49/003

Abstract: Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

Abstract translation: 提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变（MIT）装置，从超高电压，高压噪声 使用突发MIT装置绕过超高压噪声的除电路，以及包括高压噪声去除电路的电气和/或电子系统。 突变MIT装置包括基板，第一突发MIT结构和第二突发MIT结构。 第一和第二突变MIT结构分别形成在基板的上表面和下表面上。 高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。 突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

公开(公告)号：US06987290B2

公开(公告)日：2006-01-17

申请号：US10866274

申请日：2004-06-10

Applicant: Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

Inventor： Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC: H01L39/16

CPC classification number: H01L45/00

Abstract: A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

Abstract translation: 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

公开(公告)号：US08730567B2

公开(公告)日：2014-05-20

申请号：US13291225

申请日：2011-11-08

Applicant: Sungil Kim ,  Kwang-Yong Kang ,  Dong Suk Jun

Inventor： Sungil Kim ,  Kwang-Yong Kang ,  Dong Suk Jun

IPC: G02F1/35 ,  G02F1/01 ,  H01S3/00

CPC classification number: G02F1/3534 ,  G02F1/2255 ,  G02F2203/13 ,  H01S3/0078

Abstract: A terahertz continuous wave generator includes: an optical intensity modulator configured to modulate an optical signal into DSB optical signals; a local oscillator configured to generate a modulation signal for modulating the optical signal inputted to the optical intensity modulator into DSB optical signals; a notch filter configured to filter an optical signal with a specific frequency; an optical fiber amplifier configured to amplify an output signal of the optical intensity modulator; an optical circulator configured to transmit the optical signal inputted to the optical fiber amplifier to the notch filter and transmit the optical signal reflected from the notch filter to an input of the optical intensity modulator; an optical coupler configured to apply the optical signal to the optical intensity modulator; and an OE converter configured to photomix the DSB signals outputted through the notch filter.

Abstract translation: 太赫兹连续波发生器包括：光强调制器，被配置为将光信号调制成DSB光信号; 本地振荡器，被配置为产生用于将输入到所述光强度调制器的光信号调制成DSB光信号的调制信号; 陷波滤波器，被配置为滤波具有特定频率的光信号; 配置为放大所述光强调制器的输出信号的光纤放大器; 光循环器，被配置为将输入到光纤放大器的光信号发送到陷波滤波器，并将从陷波滤波器反射的光信号发射到光强度调制器的输入端; 光耦合器，被配置为将光信号施加到光强度调制器; 以及被配置为对通过陷波滤波器输出的DSB信号进行光混合的OE转换器。

公开(公告)号：US08390538B2

公开(公告)日：2013-03-05

申请号：US13244078

申请日：2011-09-23

Applicant: Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

Inventor： Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

IPC: G09G5/00

CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/319

Abstract: A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal, a gate receiving a data signal, and a drain connected to the field emitter. The field emitter is made of carbon material such as diamond, diamond like carbon, carbon nanotube or carbon nanofiber. The cathode may include multiple field emitters, and the TFT may include multiple transistors having gates to which the same signal is applied, sources to which the same signal is applied, and drains respectively connected to the field emitters. An active layer of the TFT is made of a semiconductor film such as amorphous silicon, micro-crystalline silicon, polycrystalline silicon, wide-band gap material like ZnO, or an organic semiconductor.

Abstract translation: 场发射像素包括其上形成有发射电子的场致发射体的阴极，形成从场致发射体吸收电子的荧光体的阳极以及响应于电流源的源极的薄膜晶体管（TFT） 扫描信号，接收数据信号的栅极和连接到场发射器的漏极。 场发射体由诸如金刚石，类金刚石碳，碳纳米管或碳​​纳米纤维的碳材料制成。 阴极可以包括多个场发射器，并且TFT可以包括多个晶体管，其具有施加相同信号的栅极，施加相同信号的源极以及分别连接到场发射极的漏极。 TFT的有源层由诸如非晶硅，微晶硅，多晶硅，宽带隙材料如ZnO的半导体膜或有机半导体制成。

公开(公告)号：USRE42530E1

公开(公告)日：2011-07-12

申请号：US11234816

申请日：2005-09-23

Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang

Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang

IPC: H01L29/12 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L49/003

Abstract: A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.

Abstract translation: 开关场效应晶体管包括基板; Mott-Brinkman-Rice绝缘子形成在基底上，Mott-Brinkman-Rice绝缘子在其中添加孔时经历突然的金属 - 绝缘体转变; 形成在Mott-Brinkman-Rice绝缘体上的电介质层，当施加预定电压时，介电层将孔插入到Mott-Brinkman-Rice绝缘体中; 形成在所述电介质层上的栅电极，所述栅电极向所述电介质层施加预定电压; 形成为电连接到所述Mott-Brinkman-Rice绝缘体的第一部分的源电极; 以及形成为与Mott-Brinkman-Rice绝缘体的第二部分电连接的漏电极。

公开(公告)号：US07773494B2

公开(公告)日：2010-08-10

申请号：US11810894

申请日：2007-06-07

Applicant: Mun Cheol Paek ,  Kwang Yong Kang

Inventor： Mun Cheol Paek ,  Kwang Yong Kang

IPC: G11B23/00

CPC classification number: G11B25/10 ,  G11B23/00

Abstract: Provided is an optical disk drive adapter comprising: a first rotating portion disposed at the center of an optical disk drive and installing a turntable on which a standard optical disk is mounted; a second rotating portion disposed beside the first rotating portion and installing a turntable on which a subminiature optical disk is mounted; a force transmitting portion disposed between the first rotating portion and the second rotating portion and transmitting a rotary force between the first rotating portion and the second rotating portion; and a housing supporting the entire optical disk drive adapter so that the first rotating portion, the second rotating portion, and the force transmitting portions can be rotated on their axes while maintaining their overall shape. Accordingly, without an additional subminiature optical disk drive, a subminiature optical disk can be driven using a conventional standard optical disk drive.

Abstract translation: 提供一种光盘驱动器适配器，包括：设置在光盘驱动器中心的第一旋转部分，并安装安装有标准光盘的转盘; 第二旋转部分，设置在所述第一旋转部分的旁边，并安装其上安装有超小型光盘的转盘; 设置在所述第一旋转部和所述第二旋转部之间的力传递部，并且在所述第一旋转部与所述第二旋转部之间传递旋转力; 以及支撑整个光盘驱动适配器的壳体，使得第一旋转部分，第二旋转部分和力传递部分能够在保持其整体形状的同时在其轴线上旋转。 因此，没有附加的超小型光盘驱动器，可以使用传统的标准光盘驱动器驱动超小型光盘。

公开(公告)号：US07755100B2

公开(公告)日：2010-07-13

申请号：US12176867

申请日：2008-07-21

Applicant: Sang Kuk Choi ,  Kwang Yong Kang ,  Mun Cheol Paek ,  Min Hwan Kwak

Inventor： Sang Kuk Choi ,  Kwang Yong Kang ,  Mun Cheol Paek ,  Min Hwan Kwak

IPC: H01L29/22 ,  H01L33/00 ,  H01L29/227 ,  H01L31/0203

CPC classification number: H01L31/0203 ,  H01L31/02325

Abstract: There is provided a packaging apparatus of a terahertz device, the apparatus including: a terahertz device having an active region at which terahertz wave is radiated or detected; a device substrate mounting the terahertz device whose active region is positioned at an opening region formed at the center of the device substrate, and electrically connecting the terahertz device and an external terminal to each other; a ball lens block arranged and fixed to an upper part of the terahertz device; and upper and lower cases receiving the device substrate mounted with the terahertz device therein and opening region vertical upper and lower portions of the active region of the terahertz device.

Abstract translation: 提供了一种太赫兹装置的包装装置，该装置包括：具有辐射或检测太赫兹波的有源区的太赫兹装置; 安装太赫兹器件的器件基板，其有源区域位于形成在器件基板的中心的开口区域，并将太赫兹器件和外部端子彼此电连接; 布置并固定到太赫兹装置的上部的球形透镜块; 以及容纳安装有太赫兹装置的装置基板的上壳体和下壳体以及太赫兹装置的有源区域的开口区域垂直上下部分。