RFID TAG AND MICRO CHIP INTEGRATION DESIGN
    41.
    发明申请
    RFID TAG AND MICRO CHIP INTEGRATION DESIGN 有权
    RFID标签和微芯片集成设计

    公开(公告)号:US20150235121A1

    公开(公告)日:2015-08-20

    申请号:US14183427

    申请日:2014-02-18

    Abstract: An integrated micro chip, method of integrating a micro chip, and micro chip integration system are described. In an embodiment, a micro chip such as a micro RFID chip or integrated passive device (IPD) is electrostatically transferred and bonded to a conductive pattern including a line break. In an embodiment, the line break is formed by a suitable cutting technique such as laser laser ablation, ion beam etching, or photolithography with chemical etching to accommodate the micro chip.

    Abstract translation: 描述了集成微芯片,集成微芯片的方法和微芯片集成系统。 在一个实施例中,诸如微型RFID芯片或集成无源器件(IPD)的微芯片被静电转印并结合到包括断线的导电图案。 在一个实施例中,线断裂通过合适的切割技术形成,例如激光激光烧蚀,离子束蚀刻或具有化学蚀刻的光刻以适应微芯片。

    MICRO LED WITH WAVELENGTH CONVERSION LAYER
    45.
    发明申请
    MICRO LED WITH WAVELENGTH CONVERSION LAYER 有权
    微波LED与波长转换层

    公开(公告)号:US20140339495A1

    公开(公告)日:2014-11-20

    申请号:US13894255

    申请日:2013-05-14

    Abstract: A light emitting device and method of manufacture are described. In an embodiment, the light emitting device includes a micro LED device bonded to a bottom electrode, a top electrode in electrical contact with the micro LED device, and a wavelength conversion layer around the micro LED device. The wavelength conversion layer includes phosphor particles. Exemplary phosphor particles include quantum dots that exhibit luminescence due to their size, or particles that exhibit luminescence due to their composition.

    Abstract translation: 描述了一种发光器件及其制造方法。 在一个实施例中,发光器件包括结合到底部电极的微型LED器件,与微型LED器件电接触的顶部电极以及围绕微型LED器件的波长转换层。 波长转换层包括磷光体颗粒。 示例性荧光体颗粒包括由于其尺寸而显示发光的量子点或由于其组成而显示发光的颗粒。

    COMPLIANT MICRO DEVICE TRANSFER HEAD
    49.
    发明申请
    COMPLIANT MICRO DEVICE TRANSFER HEAD 有权
    合格的微型器件传输头

    公开(公告)号:US20140196851A1

    公开(公告)日:2014-07-17

    申请号:US14173693

    申请日:2014-02-05

    Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中,微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构,并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

    MICRO DEVICE TRANSFER HEAD ARRAY WITH METAL ELECTRODES
    50.
    发明申请
    MICRO DEVICE TRANSFER HEAD ARRAY WITH METAL ELECTRODES 有权
    带金属电极的微器件传输头阵列

    公开(公告)号:US20140158415A1

    公开(公告)日:2014-06-12

    申请号:US13710438

    申请日:2012-12-10

    CPC classification number: B81C99/002 H01L21/6835 H01L2221/68354

    Abstract: A monopolar and bipolar micro device transfer head array and method of forming a monopolar and bipolar micro device transfer array are described. In an embodiment, a micro device transfer head array includes a base substrate, a first insulating layer formed over the base substrate, and an array of mesa structures. A second insulating layer may be formed over the mesa structure, a patterned metal layer over the second insulating layer, and a dielectric layer covering the metal layer.

    Abstract translation: 描述了单极和双极微器件转移头阵列和形成单极和双极微器件转移阵列的方法。 在一个实施例中,微器件转移头阵列包括基底基板,形成在基底基板上的第一绝缘层和台面结构阵列。 可以在台面结构之上形成第二绝缘层,在第二绝缘层上形成图案化金属层,以及覆盖金属层的电介质层。

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