Abstract:
An automatic soldering system includes a conveyance mechanism, a vehicle, a first part assembling mechanism, a first soldering mechanism, a turn-over mechanism, a second part assembling mechanism, a second soldering mechanism, and a control system. The vehicle is conveyed by the conveyor mechanism for carrying a workpiece. The first part assembling mechanism and the first soldering mechanism assemble and solder a first part to the primary workpiece carried by the vehicle. The turn-over mechanism turns the vehicle that is conveyed by the conveyor mechanism and carries the primary workpiece having the first part assembled thereto by a predetermined angle. The second part assembling mechanism and the second soldering mechanism assemble and solder and position a second part to the primary workpiece. The control system is electrically connected to and thus controls the first part and second part assembling mechanisms, the first and second soldering mechanisms, and the turn-over mechanism.
Abstract:
A method of fabricating an integrated inductor device includes providing a silicon substrate and forming a thickness of an insulating layer overlying the silicon substrate. The insulating layer includes a dummy structure within a portion of the thickness. The method includes forming an inductor having a first portion and a second portion. The first portion includes a spiral coil of conductor lines. The method also includes exposing the dummy structure by forming an opening in the insulating layer and removing the dummy structure to form a cavity underlying the inductor to reduce a dielectric constant and to increase a Q value of the inductor. The method includes using aluminum or copper for the dummy structures. The method includes dry etching the insulator and wet etching the dummy structure. The method also includes forming the inductors using aluminum or copper.
Abstract:
Methods are described for predicting the percentage of latewood and specific gravity of lumber independent of moisture content using image analysis of the lumber surfaces.
Abstract:
A memory cell with surrounding word line structures includes an active area; a plurality of first trenches formed on the active area in a first direction, each first trench has a bit line on a sidewall therein; a plurality of second trenches formed on the active area in a second direction, each second trench has two word lines formed correspondingly on the sidewalls in the second trench; and a plurality of transistors formed on the active area. The word line pairs are arranged into a surrounding word line structure. The transistor is controlled by the bit line and the two word lines, thus improving the speed of the transistor.
Abstract:
The disclosure describes embodiments of an apparatus including a first gas chromatograph including a fluid inlet, a fluid outlet, and a first temperature control. A controller is coupled to the first temperature control and includes logic to apply a first temperature profile to the first temperature control to heat, cool, or both heat and cool the first gas chromatograph. Other embodiments are disclosed and claimed.
Abstract:
In a method of occlusion handling, a reference frame and a current frame are first provided, and at least one foreground object is determined. At least a covered region or an uncovered region with respect to the foreground object is determined. The covered region is then interpolated exclusively accordingly to the current frame, or the uncovered region is interpolated exclusively according to the reference frame.
Abstract:
A method for haze control in a semiconductor process, includes: providing an exposure tool with a photocatalyzer coating inside and exposing a wafer in the exposure tool in the presence of activation of the photocatalyzer coating. The photocatalyzer coating may be formed within an opaque region of a reticle.
Abstract:
A two-channel operational amplifier circuit includes a first operational amplifier and a second operational amplifier. In a first frame period, the two-channel operational amplifier circuit switches a first input stage, a first gain stage and a first output stage to work between a working voltage and a half working voltage, and switches a second input stage, a second gain stage and a second output stage to work between the half working voltage and a ground voltage. In a second frame period, the two-channel operational amplifier circuit switches the second input stage and the second gain stage to work between the working voltage and the half working voltage, and switches the first input stage and the first gain stage to work between the half working voltage and the ground voltage.
Abstract:
A sensing circuit of a capacitive touch panel includes a first switch, a second switch, a third switch, a feedback capacitor, a fourth switch and an operation amplifier. The first switch and the second switch have respective first ends connected with a receiving electrode. The third switch has a first end connected with a second end of the first switch. The feedback capacitor has a first end connected with the second end of the first switch. The fourth switch has a first end connected with a second end of the feedback capacitor. The operation amplifier has a positive input terminal connected with a ground terminal, a negative input terminal connected with the fourth switch, and an output terminal connected with the second, third and fourth switches. These switches are controlled during a driving cycle of the driving signal, so that an output voltage is outputted from the operation amplifier.
Abstract:
A manufacturing method for double-side capacitor of stack DRAM has steps of: forming a sacrificial structure in the isolating trench and the capacitor trenches; forming a first covering layer and a second covering layer on the sacrificial structure; modifying a part of the second covering layer; removing the un-modified second covering layer and the first covering layer to expose the sacrificial structure; removing the exposed part of the sacrificial structure to expose the electrode layer; removing the exposed electrode layer to expose the oxide layer; and removing the oxide layer and sacrificial structure to form the double-side capacitors.