Abstract:
A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.
Abstract:
An apparatus (and method) for forming a pattern on a workpiece, includes an optical phase contrast image sensor, and an imprint lithography system coupled to the optical phase contrast image sensor for laterally aligning an imprint template feature relative to the workpiece.
Abstract:
The present invention includes a method of moving a liquid between a substrate extending in a first plane and a template extending in a second plane. More specifically, the method may include forming an oblique angle between the first plane and the second plane, reducing a distance between the substrate and the template such that the template is in contact with a portion of the liquid at a desired location, and creating a dispersion of the liquid away from the desired location.
Abstract:
A method (and apparatus) for nano lithography, includes applying a pneumatic pressure to at least one of a surface of a semi-rigid mask or template and a portion of a surface of a resist-coated workpiece, and, by the applying of the pneumatic pressure, transferring a pattern from the mask to the workpiece.
Abstract:
Interconnect dual damascene structure are fabricated by depositing on a layer of at least one dielectric, a mask forming layer for providing the via-level mask layer of the dual damascene structures; creating an elongated via pattern in the via-level mask layer; depositing a layer of line-level dielectric and creating a line pattern through the layer of line-level dielectric, and transferring the line pattern through the projected intersection of the elongated via-level pattern and of the line-level pattern thereby generating an aligned dual damascene structure. A conductive liner layer is deposited in the dual damascene structure followed by filling the dual damascene structure with a conductive fill metal to form a set of metal lines. The metal and liner layers are planarized.