公开(公告)号：US07811923B2

公开(公告)日：2010-10-12

申请号：US11778876

申请日：2007-07-17

Applicant: Qinghuang Lin ,  Sampath Purushothaman ,  Robert Wisnieff

Inventor： Qinghuang Lin ,  Sampath Purushothaman ,  Robert Wisnieff

IPC: H01L21/4763

CPC classification number: H01L21/76802 ,  F27B17/0025 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67225 ,  H01L21/76814 ,  H01L21/76825

Abstract: The present disclosure relates to an integrated wafer processing apparatus for fabricating semiconductor chips. This integrated wafer processing system combines the lithography patterning steps and irradiation curing steps of the patternable dielectric into one system. The patternable low-k material of the present disclosure also functions as a photoresist, i.e. is a photo-patternable low-k dielectric material.

Abstract translation: 本公开涉及一种用于制造半导体芯片的集成晶片处理装置。 该集成晶片处理系统将可图案化电介质的光刻图案化步骤和照射固化步骤组合成一个系统。 本公开的可图案化的低k材料还起到光致抗蚀剂的作用，即光可图案化的低k电介质材料。

公开(公告)号：US07598169B2

公开(公告)日：2009-10-06

申请号：US11677100

申请日：2007-02-21

Applicant: Qinghuang Lin ,  Elbert E. Huang ,  Christy S. Tyberg ,  Ronald A. DellaGuardia

Inventor： Qinghuang Lin ,  Elbert E. Huang ,  Christy S. Tyberg ,  Ronald A. DellaGuardia

IPC: H01L21/4763

CPC classification number: H01L21/31127 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used therein is described. The advantages of utilizing the irradiation to remove the sacrificial material include reduced damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.

Abstract translation: 描述了通过利用照射去除和清洁其中使用的牺牲材料来制造作为集成电路和微电子器件的一部分的互连结构的方法。 利用照射去除牺牲材料的优点包括降低对层间电介质层的损伤，导致增强的器件性能和/或增加的可靠性。

公开(公告)号：US20090174067A1

公开(公告)日：2009-07-09

申请号：US11971470

申请日：2008-01-09

Applicant: Qinghuang Lin

Inventor： Qinghuang Lin

IPC: H01L21/768 ,  H01L23/538

CPC classification number: H01L23/532 ,  H01L21/76808 ,  H01L21/7682 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: The present invention provides a method of fabricating an airgap-containing interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene airgap-containing low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating.

Abstract translation: 本发明提供一种制造含气隙的互连结构的方法，其中可图案化的低k材料代替了使用单独的光致抗蚀剂和电介质材料的需要。 具体而言，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌气隙低k互连结构的简化方法。

公开(公告)号：US20090026625A1

公开(公告)日：2009-01-29

申请号：US12245133

申请日：2008-10-03

Applicant: Chih-Chao Yang ,  Griselda Bonilla ,  Qinghuang Lin ,  Terry A. Spooner

Inventor： Chih-Chao Yang ,  Griselda Bonilla ,  Qinghuang Lin ,  Terry A. Spooner

IPC: H01L23/52

CPC classification number: H01L23/53295 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure and method of fabricating the same in which the adhesion between a chemically etched dielectric material and a noble metal liner is improved are provided. In accordance with the present invention, a chemically etching dielectric material is subjected to a treatment step which modified the chemical nature of the dielectric material such that the treated surfaces become hydrophobic. The treatment step is performed prior to deposition of the noble metal liner and aides in improving the adhesion between the chemically etched dielectric material and the noble metal liner.

Abstract translation: 提供了一种互连结构及其制造方法，其中改善了化学蚀刻的电介质材料和贵金属衬垫之间的粘合性。 根据本发明，对化学蚀刻电介质材料进行改性电介质材料的化学性质使得被处理的表面变得疏水的处理步骤。 在沉积贵金属衬垫和助剂以改善化学蚀刻的电介质材料和贵金属衬垫之间的粘附性之前进行处理步骤。

公开(公告)号：US07479306B2

公开(公告)日：2009-01-20

申请号：US11132108

申请日：2005-05-18

Applicant: Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

Inventor： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

IPC: C23C16/22

CPC classification number: H01L31/103 ,  Y10T428/31663

Abstract: A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.

Abstract translation: 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，另一部分C原子键合为Si-R-Si，其中R为苯基， - [CH2] n-，其中n大于或等于1，HC-CH，C-CH2，C≡C或 一个[S] n连接，其中n是上面定义的。

公开(公告)号：US20080286467A1

公开(公告)日：2008-11-20

申请号：US11750356

申请日：2007-05-18

Applicant: Robert D. Allen ,  Phillip Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

Inventor： Robert D. Allen ,  Phillip Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

IPC: B05D1/32 ,  C04B41/50

CPC classification number: H01L21/3122 ,  G03F7/0382 ,  G03F7/0757 ,  G03F7/40 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126

Abstract: A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.

Abstract translation: 一个方法。 该方法包括在硅晶片衬底上浸涂组合物的膜。 该组合物包括第一聚合物和第二聚合物的聚合物共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是具有硅烷醇端基的聚倍半硅氧烷。 该组合物包括光敏酸产生剂，有机碱和有机交联剂。 膜被图案化成像，并且至少一个区域暴露于波长为约248纳米的辐射。 该膜被烘烤，导致膜中引起交联。 显影该膜，导致去除基底溶解的膜的未曝光区域，其中残留有膜的浮雕图案。 浮雕图案在约300℃和约450℃之间的温度下固化，并且固化利用与UV辐射的热处理的组合。

公开(公告)号：US20080173984A1

公开(公告)日：2008-07-24

申请号：US11626550

申请日：2007-01-24

Applicant: Qinghuang Lin ,  Terry A. Spooner ,  Darshan D. Gandhi ,  Christy S. Tyberg

Inventor： Qinghuang Lin ,  Terry A. Spooner ,  Darshan D. Gandhi ,  Christy S. Tyberg

IPC: H01L23/58 ,  H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/76805 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76834

Abstract: A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material.

Abstract translation: 提供了具有改善的低k电介质层和含电介质衬底之间的粘附强度的机械稳固的半导体结构。 特别地，本发明提供了一种结构，其包括含电介质的衬底，其具有包括化学和物理上不同于衬底的经处理的表面层的上部区域; 以及位于所述基板的经处理的表面层上的低k电介质材料。 经处理的表面层和低k电介质材料形成界面，该界面的粘合强度大于界面两侧的较弱材料的内聚强度的60％。 经处理的表面通过在形成低k电介质材料之前用光化辐射，等离子体和电子束辐射中的至少一种来处理衬底的表面而形成。

公开(公告)号：US07214603B2

公开(公告)日：2007-05-08

申请号：US10908931

申请日：2005-06-01

Applicant: Ronald Dellaguardia ,  Elbert Huang ,  Qinghuang Lin ,  Robert Miller

Inventor： Ronald Dellaguardia ,  Elbert Huang ,  Qinghuang Lin ,  Robert Miller

IPC: H01L21/44 ,  H01L21/3205 ,  H01L21/4763

CPC classification number: H01L21/76835 ,  H01L21/76808 ,  H01L21/76829

Abstract: Methods to form interconnect structures utilizing sacrificial filling material layers are described herein. Utilizing the sacrificial filling material makes it possible to reduce damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.

Abstract translation: 本文描述了利用牺牲填充材料层形成互连结构的方法。 利用牺牲填充材料使得可以减少导致增强的器件性能和/或增加的可靠性的层间电介质层的损伤。

公开(公告)号：US20060089000A1

公开(公告)日：2006-04-27

申请号：US10973683

申请日：2004-10-26

Applicant: Ronald Della Guardia ,  Ranee Kwong ,  Wenjie Li ,  Qinghuang Lin ,  Dirk Pfeiffer ,  David Rath

Inventor： Ronald Della Guardia ,  Ranee Kwong ,  Wenjie Li ,  Qinghuang Lin ,  Dirk Pfeiffer ,  David Rath

IPC: H01L21/461 ,  C09K13/00 ,  H01L21/302

CPC classification number: H01L21/76808 ,  C09K13/08 ,  H01L21/31144

Abstract: In the back end of integrated circuits employing low-k interlevel dielectrics, etched structures are filled with a planarizing material comprising a cyclic olefin polymer and solvent; the next pattern to be etched is defined in a photosensitive layer above the planarizing layer; the pattern is etched in the dielectric and the planarizing material is stripped in a wet process that does not damage the interlevel dielectric.

Abstract translation: 在采用低k层间电介质的集成电路的后端，用包含环烯烃聚合物和溶剂的平面化材料填充蚀刻结构; 待蚀刻的下一个图案被限定在平坦化层上方的感光层中; 在电介质中蚀刻图案，并且在不损坏层间电介质的湿法中剥离平面化材料。

公开(公告)号：US20050112382A1

公开(公告)日：2005-05-26

申请号：US10721302

申请日：2003-11-24

Applicant: Robert Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong

Inventor： Robert Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong

IPC: B32B25/20 ,  C07F7/21 ,  G03F7/004 ,  G03F7/075

CPC classification number: C07F7/21 ,  G03F7/0045 ,  G03F7/0755 ,  Y10S430/106 ,  Y10S430/127 ,  Y10T428/31663

Abstract: A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

Abstract translation: 提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。 倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T T的温度下从倍半硅氧烷中裂解 通常在T T以下至少5℃。 倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。 非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。 还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。