Method for producing semi-insulating resistivity in high purity silicon carbide crystals
    41.
    发明授权
    Method for producing semi-insulating resistivity in high purity silicon carbide crystals 有权
    在高纯度碳化硅晶体中生产半绝缘电阻率的方法

    公开(公告)号:US06814801B2

    公开(公告)日:2004-11-09

    申请号:US10064232

    申请日:2002-06-24

    CPC classification number: H01L21/324 C30B29/36 C30B33/00

    Abstract: A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defect related deep level states to a temperature above the temperatures required for CVD growth of silicon carbide from source gases, but less than the sublimation temperature of silicon carbide under the ambient conditions to thereby thermodynamically increase the number of point defects and resulting states in the crystal, and then cooling the heated crystal to approach room temperature at a sufficiently rapid rate to maintain a concentration of point defects in the cooled crystal that remains greater than the first concentration.

    Abstract translation: 公开了一种在没有相关量的深层捕获元件的情况下生产高质量半绝缘碳化硅晶体的方法。 本发明包括以下步骤:将具有与点缺陷有关的深层次状态的第一浓度的碳化硅晶体加热到高于来自源气体的碳化硅的CVD生长所需温度的温度,但小于碳化硅的升华温度 从而热力学地增加晶体中的点缺陷数量和结果状态,然后以足够快的速率将加热的晶体冷却至接近室温,以保持冷却的晶体中的点缺陷的浓度保持大于第一 浓度。

    Methods of fabricating silicon carbide crystals

    公开(公告)号:US06706114B2

    公开(公告)日:2004-03-16

    申请号:US09862108

    申请日:2001-05-21

    Inventor: Stephan Mueller

    CPC classification number: C30B23/00 C30B23/025 C30B29/36 Y10S117/911

    Abstract: Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.

    WIRED PIPE SURFACE SUB
    44.
    发明申请

    公开(公告)号:US20190218864A1

    公开(公告)日:2019-07-18

    申请号:US16361784

    申请日:2019-03-22

    CPC classification number: E21B17/028

    Abstract: A sub for a wired pipe system that includes a body includes an outer surface and a pin end and a first transmission device located in or near the pin end. The sub also includes a communication collar that at least partially surrounds the outer surface and that is rotatable relative to the body, a second transmission device in electrical communication with the first transmission device and a transmission line that electrically connects the first and second communication devices and that passes at least partially through the body. The sub further includes a third transmission device located in the communication collar in communication with the second transmission device. In the disclosed sub, the first, second and third transmission devices are all of the same type.

    Shoulder ring for transmission line and transmission devices
    50.
    发明授权
    Shoulder ring for transmission line and transmission devices 有权
    传输线和传输设备的肩环

    公开(公告)号:US09534455B2

    公开(公告)日:2017-01-03

    申请号:US13948303

    申请日:2013-07-23

    CPC classification number: E21B17/042 E21B17/028 E21B17/03

    Abstract: A tubular section and a system including the tubular section include a first tubular member including a threaded pin section and a second tubular member, the second tubular member including a threaded box section configured to mate with the threaded pin section. The tubular section also includes a shoulder ring disposed between the first tubular member and the second tubular member, wherein a wall thickness of at least a portion of the shoulder ring is greater than a smallest wall thickness of the threaded pin section of the first tubular member.

    Abstract translation: 包括管状部分的管状部分和系统包括包括螺纹销部分和第二管状部件的第一管状部件,第二管状部件包括构造成与螺纹销部分配合的螺纹箱部分。 管状部分还包括设置在第一管状构件和第二管状构件之间的肩环,其中胎肩环的至少一部分的壁厚度大于第一管状构件的螺纹销部分的最小壁厚度 。

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