公开(公告)号：US6015997A

公开(公告)日：2000-01-18

申请号：US803174

申请日：1997-02-19

Applicant: Yongjun Hu ,  Pai-Hung Pan ,  Er-Xuan Ping ,  Randhir P.S. Thakur ,  Scott DeBoer

Inventor： Yongjun Hu ,  Pai-Hung Pan ,  Er-Xuan Ping ,  Randhir P.S. Thakur ,  Scott DeBoer

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/76 ,  H01L29/74 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L21/28044 ,  H01L21/28052 ,  H01L29/4941

Abstract: Methods and apparatus for forming word line stacks comprise one, or a combination of the following: a silicon diffusion barrier layer, doped with oxygen or nitrogen, coupled between a bottom silicon layer and a conductor layer; an amorphous silicon diffusion barrier coupled between a polysilicon layer and a conductor layer; a thin nitride layer coupled between a bottom silicon layer and a titanium silicide conductor layer, and a bottom silicon layer coupled to a conductor layer, which comprises C54-titanium silicide. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications and have a lower resistivity and improved thermal stability.

公开(公告)号：US6004869A

公开(公告)日：1999-12-21

申请号：US845616

申请日：1997-04-25

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L21/28 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/49 ,  H01L21/3205

CPC classification number: H01L21/76895 ,  H01L21/28061 ,  H01L21/32134 ,  H01L29/4941

Abstract: A method for forming conductive lines such as interconnects and DRAM gate stacks. A blanket stack is formed on a substrate including a conductive diffusion barrier, a near noble metal such as cobalt, followed by a silicon layer and a top insulator layer. The blanket stack is patterned with resist to define the conductive lines. The stack is dry etched down to the near noble metal layer. The resist is then removed and the stack is annealed to react the near noble metal and silicon to form a conductive compound having fine grain size. The unreacted noble metal is then wet etched, using the conductive diffusion barrier as a wet etch stop. A further dry etch is then performed down to the substrate, using the top insulator layer as a mask. In this manner, only one mask is required to form the conductive line.

公开(公告)号：US5962904A

公开(公告)日：1999-10-05

申请号：US931336

申请日：1997-09-16

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/12

CPC classification number: H01L21/28061 ,  H01L29/4941 ,  Y10S257/915

Abstract: Disclosed is a gate electrode stack structure that uses a refractory metal silicon nitride layer as a diffusion barrier. The gate electrode stack has several layers, including a gate oxide layer over the semiconductor substrate, a polysilicon layer over the gate oxide layer, and the diffusion barrier between the polysilicon layer and a layer of electrically conductive material above. The diffusion barrier, which is preferably composed of a substantially amorphous refractory metal silicon nitride such as tungsten silicon nitride, of does not oxidize when an oxidation process is applied to the gate electrode stack. Moreover, the diffusion barrier substantially prevents diffusion of the electrically conductive material into the polysilicon during heating processes. The refractory metal silicon nitride maintains a bulk resistivity less than 2,000 microhm-cm, thereby preserving satisfactory conductivity in the gate electrode stack. A process for forming the gate electrode stack and diffusion barrier is also disclosed.

Abstract translation: 公开了使用难熔金属氮化硅层作为扩散阻挡层的栅电极堆叠结构。 栅极电极堆叠具有数个层，包括半导体衬底上的栅极氧化物层，栅极氧化物层上方的多晶硅层，以及多晶硅层与上述导电材料层之间的扩散阻挡层。 优选由基本上无定形的难熔金属氮化硅如氮化硅钨构成的扩散阻挡层在氧化工艺施加到栅极电极叠层时不会氧化。 此外，扩散阻挡层基本上防止在加热过程中导电材料扩散到多晶硅中。 难熔金属氮化硅保持体电阻率小于2,000微欧姆 - 厘米，从而保持栅电极堆叠中令人满意的导电性。 还公开了一种用于形成栅极电极堆叠和扩散阻挡层的工艺。

公开(公告)号：US20060163663A1

公开(公告)日：2006-07-27

申请号：US11371657

申请日：2006-03-08

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L29/94

CPC classification number: H01L21/823857 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/4975

Abstract: A semiconductor device, such as a CMOS device, having gates with a high work function in PMOS regions and low work functions in NMOS regions and a method of producing the same. Using nitrogen implantation or plasma annealing, a low work function W (or CoSix)/TaSixNy/GOx/Si gate stack is formed in the NMOS regions while a high work function W (or CoSix)/Ta5Si3/GOx/Si gate stack is formed in the PMOS regions. The improved process also eliminates the need for a nitrided GOx which is known to degrade gm (transconductance) performance. The materials of the semiconductor devices exhibit improved adhesion characteristics to adjacent materials and low internal stress.

Abstract translation: 一种半导体器件，例如CMOS器件，其在PMOS区域中具有高功函数的栅极和NMOS区域中的低功函数及其制造方法。 使用氮注入或等离子体退火，低功函数W（或Co x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x 形成在NMOS区域中，同时形成高功函数W（或CoSi x Sb）/ Ta 5 Si 3 / GO x / Si栅叠层 在PMOS区域。 改进的方法也不需要已知降解g（跨导）性能的氮化的GOx。 半导体器件的材料表现出对相邻材料的改善的粘附特性和低内应力。

公开(公告)号：US20060006481A1

公开(公告)日：2006-01-12

申请号：US11225450

申请日：2005-09-13

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L29/76

CPC classification number: H01L27/105 ,  H01L23/485 ,  H01L27/1052 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method used to form a semiconductor device comprises forming a polysilicon layer, forming a conductive barrier layer on the polysilicon layer, then forming a conductive nitride layer on the conductive barrier layer. Next, a conductive amorphous layer is formed on the conductive barrier layer, and an elemental metal layer is formed on the conductive amorphous layer. Without the conductive amorphous layer the elemental metal layer would form on the conductive nitride layer as a small grained, high resistance layer, while it forms on the conductive amorphous layer as a large grained, low resistance layer. A semiconductor device which may be formed using this method is also described.

Abstract translation: 用于形成半导体器件的方法包括形成多晶硅层，在多晶硅层上形成导电阻挡层，然后在导电阻挡层上形成导电氮化物层。 接着，在导电性阻挡层上形成导电非晶层，在导电性非晶层上形成元素金属层。 在没有导电非晶层的情况下，元素金属层将作为小颗粒的高电阻层在导电氮化物层上形成，而在导电非晶层上形成作为大晶粒的低电阻层。 还描述了可以使用该方法形成的半导体器件。

公开(公告)号：US06953749B2

公开(公告)日：2005-10-11

申请号：US09798404

申请日：2001-03-02

Applicant: Yongjun Hu ,  Jigish D. Trivedi

Inventor： Yongjun Hu ,  Jigish D. Trivedi

IPC: H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76889 ,  H01L21/76895

Abstract: Methods of forming refractory metal suicide components are described. In accordance with one implementation, a refractory metal layer is formed over a substrate. A silicon-containing structure is formed over the refractory metal layer and a silicon diffusion restricting layer is formed over at least some of the silicon-containing structure. The substrate is subsequently annealed at a temperature which is sufficient to cause a reaction between at least some of the refractory metal layer and at least some of the silicon-containing structure to at least partially form a refractory metal silicide component. In accordance with one aspect of the invention, a silicon diffusion restricting layer is formed over or within the refractory metal layer in a step which is common with the forming of the silicon diffusion restricting layer over the silicon-containing structure. In a preferred implementation, the silicon diffusion restricting layers are formed by exposing the substrate to nitridizing conditions which are sufficient to form a nitride-containing layer over the silicon-containing structure, and a refractory metal nitride compound within the refractory metal layer. A preferred refractory metal is titanium.

Abstract translation: 描述形成难熔金属硅化物组分的方法。 根据一个实施方案，在衬底上形成难熔金属层。 在难熔金属层之上形成含硅结构，并且在至少一些含硅结构上形成硅扩散限制层。 随后在足以使至少一些难熔金属层与至少一些含硅结构之间的反应至少部分地形成难熔金属硅化物组分的温度下进行退火。 根据本发明的一个方面，在与含硅结构上形成硅扩散限制层相同的步骤中，在难熔金属层之上或之内形成硅扩散限制层。 在优选的实施方案中，硅扩散限制层是通过将衬底暴露于足以在含硅结构上形成含氮化物层的氮化条件和难熔金属层内的难熔金属氮化物化合物而形成的。 优选的难熔金属是钛。

公开(公告)号：US20050161721A1

公开(公告)日：2005-07-28

申请号：US11072159

申请日：2005-03-04

Applicant: Ravi Iyer ,  Yongjun Hu ,  Luan Tran ,  Brent Gilgen

Inventor： Ravi Iyer ,  Yongjun Hu ,  Luan Tran ,  Brent Gilgen

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L29/45 ,  H01L27/108

CPC classification number: H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

Abstract translation: 使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。 每种难熔金属材料是含有难熔金属和杂质的导电材料。 第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。 与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。 因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。 这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

公开(公告)号：US06525384B2

公开(公告)日：2003-02-25

申请号：US09131993

申请日：1998-08-11

Applicant: Yongjun Hu ,  Randhir P. S. Thakur ,  Scott DeBoer

Inventor： Yongjun Hu ,  Randhir P. S. Thakur ,  Scott DeBoer

IPC: H01L31119

CPC classification number: H01L21/28052 ,  H01L21/28061 ,  H01L27/10891 ,  H01L29/4941 ,  Y10S257/914 ,  Y10S257/915

Abstract: Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.

Abstract translation: 用于形成字线堆叠的方法和装置包括形成耦合在底部硅层和导体层之间的薄氮化物层。 在另一个实施例中，扩散阻挡层耦合在薄氮化物层和底部硅层之间。 通过在含氮环境中退火氧化硅膜来形成薄氮化物层。

公开(公告)号：US06417104B1

公开(公告)日：2002-07-09

申请号：US09450301

申请日：1999-11-29

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L3111

CPC classification number: H01L21/76895 ,  H01L21/28061 ,  H01L21/32134 ,  H01L29/4941

Abstract: A method for forming conductive lines such as interconnects and DRAM gate stacks. A blanket stack is formed on a substrate including a conductive diffusion barrier, a near noble metal such as cobalt, followed by a silicon layer and a top insulator layer. The blanket stack is patterned with resist to define the conductive lines. The stack is dry etched down to the near noble metal layer. The resist is then removed and the stack is annealed to react the near noble metal and silicon to form a conductive compound having fine grain size. The unreacted noble metal is then wet etched, using the conductive diffusion barrier as a wet etch stop. A further dry etch is then performed down to the substrate, using the top insulator layer as a mask. In this manner, only one mask is required to form the conductive line.

Abstract translation: 一种用于形成诸如互连和DRAM栅极叠层之类的导线的方法。 在包括导电扩散阻挡层，接近贵金属如钴的衬底上，随后是硅层和顶部绝缘体层的衬底上形成覆盖层叠层。 用抗蚀剂图案化叠层叠层以限定导电线。 将该堆叠干燥地蚀刻到接近的贵金属层。 然后去除抗蚀剂，并且将堆叠退火以使近贵金属和硅反应以形成具有细晶粒度的导电化合物。 然后使用导电扩散阻挡层作为湿蚀刻停止层，对未反应的贵金属进行湿蚀刻。 然后使用顶部绝缘体层作为掩模，进一步干燥蚀刻到衬底。 以这种方式，仅需要一个掩模来形成导线。

公开(公告)号：US6120915A

公开(公告)日：2000-09-19

申请号：US20591

申请日：1998-02-04

Applicant: Yongjun Hu ,  Jigish D. Trivedi

Inventor： Yongjun Hu ,  Jigish D. Trivedi

IPC: H01L21/768 ,  H01L23/498 ,  B32B15/00 ,  B32B15/04 ,  B32B18/00

CPC classification number: H01L21/76895 ,  H01L21/76889 ,  H01L23/49866 ,  H01L2924/0002 ,  Y10S257/915 ,  Y10T428/12576

Abstract: Methods of forming refractory metal silicide components are described. In accordance with one implementation, a refractory metal layer is formed over a substrate. A silicon-containing structure is formed over the refractory metal layer and a silicon diffusion restricting layer is formed over at least some of the silicon-containing structure. The substrate is subsequently annealed at a temperature which is sufficient to cause a reaction between at least some of the refractory metal layer and at least some of the silicon-containing structure to at least partially form a refractory metal silicide component. In accordance with one aspect of the invention, a silicon diffusion restricting layer is formed over or within the refractory metal layer in a step which is common with the forming of the silicon diffusion restricting layer over the silicon-containing structure. In a preferred implementation, the silicon diffusion restricting layers are formed by exposing the substrate to nitridizing conditions which are sufficient to form a nitride-containing layer over the silicon-containing structure, and a refractory metal nitride compound within the refractory metal layer. A preferred refractory metal is titanium.

Abstract translation: 描述形成难熔金属硅化物组分的方法。 根据一个实施方案，在衬底上形成难熔金属层。 在难熔金属层之上形成含硅结构，并且在至少一些含硅结构上形成硅扩散限制层。 随后在足以使至少一些难熔金属层与至少一些含硅结构之间的反应至少部分地形成难熔金属硅化物组分的温度下进行退火。 根据本发明的一个方面，在与含硅结构上形成硅扩散限制层相同的步骤中，在难熔金属层之上或之内形成硅扩散限制层。 在优选的实施方案中，硅扩散限制层是通过将衬底暴露于足以在含硅结构上形成含氮化物层的氮化条件和难熔金属层内的难熔金属氮化物化合物而形成的。 优选的难熔金属是钛。