公开(公告)号：US20190033727A1

公开(公告)日：2019-01-31

申请号：US16026507

申请日：2018-07-03

Applicant: ASML Netherlands B.V.

Inventor： Marc Johannes NOOT ,  Simon Gijsbert Josephus MATHIJSSEN ,  Kaustuve BHATTACHARYYA ,  Jinmoo BYUN ,  Hyun-Su KIM ,  Won-Jae JANG ,  Timothy Dugan DAVIS

IPC: G03F7/20

Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.

公开(公告)号：US20170176870A1

公开(公告)日：2017-06-22

申请号：US15384084

申请日：2016-12-19

Applicant: ASML Netherlands B.V.

Inventor： Paul Christiaan HINNEN ,  Simon Gijsbert Josephus MATHIJSSEN ,  Maikel Robert GOOSEN ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/702 ,  G03F7/70641 ,  G03F7/70683 ,  G03F7/7085

Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

公开(公告)号：US20160274472A1

公开(公告)日：2016-09-22

申请号：US15032507

申请日：2014-10-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Stefan HUNSCHE ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

CPC classification number: G03F7/70683 ,  G03F7/213 ,  G03F7/22 ,  G03F7/70466 ,  G03F7/70616 ,  G03F7/70633

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

Abstract translation: 公开了一种用于光刻的检查装置。 它包括用于承载多个计量目标的基板的支撑件; 光学系统，用于在预定的照明条件下照射所述目标，并用于在所述照明条件下检测由所述目标衍射的辐射的预定部分; 处理器，被布置成从所述检测到的衍射辐射部分计算特定目标的不对称度; 以及控制器，用于使所述光学系统和处理器测量所述目标中的至少两个中的不对称性，所述对象在所述基底上的层内的结构之间的位置偏移和较小子结构之间具有不同的已知分量，并且根据所述不对称测量的结果计算 用于所述较小尺寸结构的光刻工艺的性能参数的测量。 还公开了提供有通过光刻工艺形成的多个新颖度量目标的基板。