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公开(公告)号:US20250102877A1
公开(公告)日:2025-03-27
申请号:US18372953
申请日:2023-09-26
Inventor: Michal Rakowski , Yusheng Bian , Roderick A. Augur , Ayat M. Taha , Marios Papadovasilakis , Yonas Hadush Gebregiorgis , Jaime Viegas
Abstract: Structures for a power splitter that include a multimode interference coupler and methods of forming such structures. The structure comprises a multimode interference coupler including a grating having a plurality of grating lines, an input waveguide core, and an output waveguide core. The grating lines are disposed between the input waveguide core and the output waveguide core. The structure further comprises a resistive heating element adjacent to the grating lines.
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公开(公告)号:US20240419047A1
公开(公告)日:2024-12-19
申请号:US18210151
申请日:2023-06-15
Applicant: GlobalFoundries U.S. Inc.
Inventor: Michal Rakowski , Sujith Chandran , Takako Hirokawa , Pilar Gonzalez
Abstract: Structures for a broadband optical switch and methods of forming such structures. The structure comprises a Mach-Zehnder interferometer including first and second arms. The first arm comprises a first waveguide core, and the second arm comprises a second waveguide core. The structure further comprises a ring resonator comprising a third waveguide core that has a first thickness. A portion of the third waveguide core is adjacent to a portion of the first waveguide core over a light coupling region. A slab layer connects the portion of the first waveguide core to the portion of the third waveguide core. The slab layer has a second thickness that is less than the first thickness of the first waveguide core.
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公开(公告)号:US20240085624A1
公开(公告)日:2024-03-14
申请号:US17944252
申请日:2022-09-14
Applicant: GlobalFoundries U.S. Inc.
Inventor: Yusheng Bian , Steven M. Shank , Judson Holt , Michal Rakowski , Bartlomiej Jan Pawlak
CPC classification number: G02B6/1228 , G02B6/13
Abstract: Structures including an electro-absorption modulator and methods of forming such structures. The structure comprises a waveguide core including a first tapered section, a second tapered section, and a longitudinal axis. The first tapered section and the second tapered section are aligned along the longitudinal axis. The structure further comprises a first waveguide taper overlapping the first tapered section of the waveguide core, a second waveguide taper overlapping the second tapered section of the waveguide core, and a multiple-layer structure on the waveguide core between the first waveguide taper and the second waveguide taper.
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公开(公告)号:US11852867B2
公开(公告)日:2023-12-26
申请号:US17454063
申请日:2021-11-09
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Bo Peng , Michal Rakowski
CPC classification number: G02B6/1225 , G02B2006/1213 , G02B2006/12104
Abstract: The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to semiconductor devices having a reflector and a photonic component and a method of forming the same. The present disclosure provides a semiconductor device having a substrate, a photonic component arranged above the substrate, a bottom reflector arranged above the substrate and positioned below the photonic component, in which the bottom reflector has a plurality of grating structures configured to reflect electromagnetic waves towards the photonic component, and a top reflector arranged above the photonic component, in which the top reflector has a plurality of grating structures configured to reflect electromagnetic waves towards the photonic component.
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公开(公告)号:US11555964B1
公开(公告)日:2023-01-17
申请号:US17363846
申请日:2021-06-30
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Michal Rakowski , Petar I. Todorov , Yusheng Bian , Won Suk Lee , Asif J. Chowdhury , Kenneth J. Giewont
Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide. Thus, the heating element is usable for thermally tuning the closed-curve waveguide via the closed-curve thermal coupler to minimize any temperature-dependent resonance shift (TDRS).
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公开(公告)号:US11500262B2
公开(公告)日:2022-11-15
申请号:US16842887
申请日:2020-04-08
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Bo Peng , Yusheng Bian , Michal Rakowski , Tymon Barwicz
Abstract: One illustrative backscattering generator disclosed herein includes a low-reflection waveguide structure, a slot waveguide structure comprising a first waveguide, a second waveguide and a slot located between the first waveguide and the second waveguide, and a variable direction coupler operatively coupled to the low-reflection waveguide structure and the slot waveguide structure.
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公开(公告)号:US20220291464A1
公开(公告)日:2022-09-15
申请号:US17196428
申请日:2021-03-09
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Nicholas A. Polomoff , Jae Kyu Cho , Frank Kuechenmeister , John J. Ellis-Monaghan , Michal Rakowski
Abstract: Structures including an edge coupler and a crackstop, as well as methods of forming a structure including an edge coupler and a crackstop. A waveguide core and a crackstop are located over a top surface of a dielectric layer. A communication passageway is either optically coupled or electrically coupled to the waveguide core. The communication passageway, which may include an electric conductor or a buried waveguide core, extends laterally beneath the crackstop.
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公开(公告)号:US20220252784A1
公开(公告)日:2022-08-11
申请号:US17170203
申请日:2021-02-08
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Alec Hammond , Yusheng Bian , Michal Rakowski , Won Suk Lee , Asif J. Chowdhury , Roderick A. Augur , Abdelsalam Aboketaf
Abstract: Structures for a wavelength-division multiplexing filter and methods of forming a structure for a wavelength-division multiplexing filter. The structure includes a first slab having a first perimeter, a first waveguide core coupled to the first slab, and a plurality of second waveguide cores coupled to the first slab. A second slab is positioned to overlap with the first slab. The second slab includes a second perimeter and openings that are distributed inside the second perimeter. The openings of the second slab penetrate through the second slab.
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公开(公告)号:US20220247148A1
公开(公告)日:2022-08-04
申请号:US17167201
申请日:2021-02-04
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Roderick A. Augur , Michal Rakowski , Kenneth J. Giewont , Karen A. Nummy
Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
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公开(公告)号:US11322636B2
公开(公告)日:2022-05-03
申请号:US16799183
申请日:2020-02-24
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor: Asif J. Chowdhury , Ajey Poovannummoottil Jacob , Yusheng Bian , Michal Rakowski
IPC: H01L31/107 , H01L31/0232 , H01L31/02
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.
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