公开(公告)号：US20220375865A1

公开(公告)日：2022-11-24

申请号：US17323253

申请日：2021-05-18

Applicant: Intel Corporation

Inventor： Srinivas V. Pietambaram ,  Krishna Bharath ,  Sai Vadlamani ,  Pooya Tadayon ,  Tarek A. Ibrahim

IPC: H01L23/538 ,  H01L49/02 ,  H01L23/64 ,  H01L25/065

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a glass substrate having a plurality of conductive through-glass vias (TGV); a magnetic core inductor including: a first conductive TGV at least partially surrounded by a magnetic material; and a second conductive TGV electrically coupled to the first TGV; a first die in a first dielectric layer, wherein the first dielectric layer is on the glass substrate; and a second die in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the second die is electrically coupled to the magnetic core inductor.

公开(公告)号：US20210305162A1

公开(公告)日：2021-09-30

申请号：US16829396

申请日：2020-03-25

Applicant: Intel Corporation

Inventor： Sanka Ganesan ,  Ram Viswanath ,  Xavier Francois Brun ,  Tarek A. Ibrahim ,  Jason M. Gamba ,  Manish Dubey ,  Robert Alan May

IPC: H01L23/538 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic component may include a substrate having a first face and an opposing second face, wherein the substrate includes a through-substrate via (TSV); a first mold material region at the first face, wherein the first mold material region includes a first through-mold via (TMV) conductively coupled to the TSV; and a second mold material region at the second face, wherein the second mold material region includes a second TMV conductively coupled to the TSV.