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公开(公告)号：US20220013980A1
公开(公告)日：2022-01-13
申请号：US17297858
申请日：2019-11-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Harald König , Alfred Lell
IPC: H01S5/024 , H01S5/0225
Abstract: An optoelectronic semiconductor laser component is specified. The optoelectronic semiconductor laser component comprises a semiconductor body with a first main surface, a second main surface, at least one active region formed between the first main surface and the second main surface, an output coupling surface extending from the first main surface to the second main surface, through which at least a part of the electromagnetic radiation is coupled out, a first heat sink arranged on the first main surface and a second heat sink arranged on the second main surface, and an optical protective element arranged downstream of the output coupling surface, for which the first heat sink and/or the second heat sink form a carrier. The outcoupling takes place in a main emission direction. Electrical contacting of the semiconductor body takes place by means of the first heat sink and the second heat sink. The first heat sink and/or the second heat sink comprise mounting surfaces on a side opposite the output coupling surface, on a side opposite the first main surface and/or on a side opposite the second main surface. A method for producing an optoelectronic semiconductor laser component is further specified.
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公开(公告)号：US11086138B2
公开(公告)日：2021-08-10
申请号：US16320550
申请日：2017-07-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Löffler , Harald König , André Somers , Clemens Vierheilig
IPC: H04N13/30 , G02B30/27 , H04N13/305 , H04N13/32 , H04N13/307 , G02B30/24 , G02B30/35
Abstract: A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.
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公开(公告)号：US11031524B2
公开(公告)日：2021-06-08
申请号：US16730858
申请日：2019-12-30
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Sven Gerhard
Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.
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44.发明授权公开(公告)号：US11005005B2
公开(公告)日：2021-05-11
申请号：US16409527
申请日：2019-05-10
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Harald König , Jens Ebbecke , Alfred Lell , Sven Gerhard , Clemens Vierheilig
Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.
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公开(公告)号：US20190245323A1
公开(公告)日：2019-08-08
申请号：US16386879
申请日：2019-04-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Sebastian Taeger , Sophia Huppmann
CPC classification number: H01S5/0282 , H01S5/02469 , H01S5/028
Abstract: A laser diode chip has a laser facet, which includes a coating. The coating includes an inorganic layer and an organic layer. In one example, the coating has a number of inorganic layers, including a heat-conductive layer. For example, the inorganic layers may form a reflection-increasing or reflection-decreasing layer sequence.
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Patent Agency Ranking
公开(公告)号：US10270225B2
公开(公告)日：2019-04-23
申请号：US15773162
申请日：2016-11-02
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Löffler , André Somers
IPC: H01S5/00 , H01S5/40 , H01S5/20 , H01S5/10 , H01S5/022 , H01S5/026 , H01S5/343 , H01S5/323 , H01S5/028 , H01S5/42
Abstract: A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.
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公开(公告)号：US20190052060A1
公开(公告)日：2019-02-14
申请号：US15764411
申请日：2016-09-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.
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公开(公告)号：US10181695B2
公开(公告)日：2019-01-15
申请号：US15560068
申请日：2016-03-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Harald Koenig , Adrian Stefan Avramescu
Abstract: A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.
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公开(公告)号：US20180083415A1
公开(公告)日：2018-03-22
申请号：US15560068
申请日：2016-03-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Harald Koenig , Adrian Stefan Avramescu
CPC classification number: H01S5/026 , H01S5/0217 , H01S5/2009 , H01S5/22 , H01S5/2222 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/32 , H01S5/3211
Abstract: A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.
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公开(公告)号：US09787055B2
公开(公告)日：2017-10-10
申请号：US15119546
申请日：2015-03-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Müller , Alfred Lell , Uwe Strauβ
CPC classification number: H01S5/02476 , H01S5/0224 , H01S5/02469 , H01S5/02484 , H01S5/0425 , H01S5/168 , H01S5/2214 , H01S5/222 , H01S5/2226 , H01S5/32341 , H01S2301/176
Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.
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