Abstract:
A block management method for managing blocks of a flash memory storage device is provided. The flash memory storage device includes a flash memory controller. The block management method includes the following steps. At least a part of the blocks is grouped into a first partition and a second partition. Whether an authentication code exists is determined. When the authentication code exists, the blocks belonging to the first partition are provided for a host system to access, so the host system displays the first partition and hides the second partition. An authentication information is received from the host system. Whether the authentication information and the authentication code are identical is authenticated. When the authentication information and the authentication code are identical, the blocks belonging to the second partition are provided for the host system to access, so the host system displays the second partition and hides the first partition.
Abstract:
Disclosed are semiconductor die structures that enable a die having a vertical power device to be packaged in a wafer-level chip scale package where the current-conducting terminals are present at one surface of the die, and where the device has very low on-state resistance. In an exemplary embodiment, a trench and an aperture are formed in a backside of a die, with the aperture contacting a conductive region at the top surface of the die. A conductive layer and/or a conductive body may be disposed on the trench and aperture to electrically couple the backside current-conducting electrode of the device to the conductive region. Also disclosed are packages and systems using a die with a die structure according to the invention, and methods of making dice with a die structure according to the invention.
Abstract:
A semiconductor package includes a semiconductor device 30 and a molded upper heat sink 10. The heat sink has an interior surface 16 that faces the semiconductor device and an exterior surface 15 that is at least partially exposed to the ambient environment of the packaged device. An annular planar base 11 surrounds a raised or protruding central region 12. That region is supported above the plane of the base 11 by four sloped walls 13.1-13.4. The walls slope at an acute angle with respect to the planar annular base and incline toward the center of the upper heat sink 10. Around the outer perimeter of the annular base 11 are four support arms 18.1-18.4. The support arms are disposed at an obtuse angle with respect to the interior surface 16 of the planar annular base 11.
Abstract:
Semiconductor packages comprising a plurality of lead fingers containing a lead intrusion at the edge of the lead fingers are described. The semiconductor packages comprise an integrated circuit chip that is connected to a die pad and is electrically connected to multiple lead fingers. One or more of the lead fingers may have a lead intrusion disposed on the external exposed lower surface of the lead finger. The lead intrusion may have a height that is about ⅕ to about ½ the height of a lead finger, a width that is about ⅕ to about 1/2 the width of a lead finger, and a depth that is about ¼ to about ¾ the length of the externally exposed lower surface of a lead finger. The lead intrusion increases the area on the lead finger that contacts a bond material, such as solder, and therefore increase the strength of the joint between the semiconductor package and an external surface to which the lead finger is connected (i.e., a PCB). The lead intrusion allows out gassing during reflow of the bond material which may reduce voiding. The lead intrusion can also increase bond joint reliability by providing longer crack propagation length.
Abstract:
This invention relates to a device and method for optical nanoindentation measurement, according to which respective measurement results are obtained by having an indenter tip apply load to a fixed portion of a thin film, having an indenter tip apply load to a non-fixed portion of a thin film, and having a vibrating component transmit the dynamic properties of the vibration to the thin film. By combining the above measurement results in calculations, the Young's modulus, the Poisson's ratio, and the density of the thin film can be obtained.
Abstract:
The multi-chip leadless module 200 has integrated circuit (IC) 150, dual re-channel mosfet 110, IC leads 210, 211, 212, gate leads 213, 213, and source leads 217-220 encapsulated in resin 250. The IC 150 and the dual n-channel mosfet 110 are mounted face down on the leads. IC leads 210, 211, 212 are made of planar metal and connect, respectively, to the electrodes TEST, VDD and VM on the IC 150 using a flip chip technique to assemble the leads on copper pillars or copper studs.
Abstract:
A data writing method for a rewritable non-volatile memory module, and a memory controller and a memory storage apparatus using the same are provided. The method includes partitioning physical blocks of the rewritable non-volatile memory module into a data area and a spare area and configuring logical blocks. The method also includes selecting physical blocks from the spare area as spare physical blocks corresponding to a logical block and using only lower physical pages of the spare physical blocks to store updated data that is to be written into the logical block. The method further includes moving valid data of all logical pages of the logical block into a physical block of the data area, wherein each lower physical page and an upper physical page corresponding thereto in the physical block are programmed together. Accordingly, the method can effectively improve the speed and reliability of writing data.
Abstract:
A semiconductor package includes a semiconductor device 30 and a molded upper heat sink 10. The heat sink has an interior surface 16 that faces the semiconductor device and an exterior surface 15 that is at least partially exposed to the ambient environment of the packaged device. An annular planar base 11 surrounds a raised or protruding central region 12. That region is supported above the plane of the base 11 by four sloped walls 13.1-13.4. The walls slope at an acute angle with respect to the planar annular base and incline toward the center of the upper heat sink 10. Around the outer perimeter of the annular base 11 are four support arms 18.1-18.4. The support arms are disposed at an obtuse angle with respect to the interior surface 16 of the planar annular base 11.
Abstract:
Disclosed are semiconductor dice with backside trenches filled with elastic conductive material. The trenches reduce the on-state resistances of the devices incorporated on the dice. The elastic conductive material provides a conductive path to the backsides of the die with little induced stress on the semiconductor die caused by thermal cycling. Also disclosed are packages using the dice, and methods of making the dice.
Abstract:
A storage device, a memory controller, and a data protection method are provided. The method includes when receiving a read command sent by a host, adopting a corresponding output flow rate limit to determine an operation that is executed on read data corresponding to the read command by the host according to location information included in the read command or a type of a transmission interface between the host and the storage device. The method also includes executing an interference procedure by the storage device to prevent the read data from being copied to the host or slow down the speed of copying the read data to the host when identifying that the operation is a copy operation.