公开(公告)号：US10229927B2

公开(公告)日：2019-03-12

申请号：US14725476

申请日：2015-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dohyun Lee ,  Jaegoo Lee ,  Young-Jin Kwon ,  Youngwoo Park ,  Jaeduk Lee

IPC: H01L27/115 ,  H01L27/11582 ,  H01L29/10 ,  H01L29/792 ,  H01L27/1157

Abstract: A semiconductor device includes a lower stack structure including lower gate electrodes and lower insulating layers that are alternately and repeatedly stacked on a substrate. The semiconductor device includes an upper stack structure including upper gate electrodes and upper insulating layers that are alternately and repeatedly stacked on the lower stack structure. A lower channel structure penetrates the lower stack structure. An upper channel structure penetrates and is connected to the upper stack structure. A lower vertical insulator is disposed between the lower stack structure and the lower channel structure. The lower channel structure includes a first vertical semiconductor pattern connected to the substrate, and a first connecting semiconductor pattern disposed on the first vertical semiconductor pattern. The upper channel structure includes a second vertical semiconductor pattern electrically connected to the first vertical semiconductor pattern with the first connecting semiconductor pattern disposed therebetween.