公开(公告)号：US09627233B2

公开(公告)日：2017-04-18

申请号：US14187556

申请日：2014-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeokHoon Kim ,  Yongmyung Jun ,  Yongsun Ko ,  Kyoungseob Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Jihoon Jeong ,  Yong-Jhin Cho

IPC: B05B1/14 ,  H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67051

Abstract: Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.

公开(公告)号：US09165759B2

公开(公告)日：2015-10-20

申请号：US14086426

申请日：2013-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won Bae ,  Yongsun Ko ,  Byoungho Kwon ,  Bo yun Kim ,  Hongjin Kim ,  Sungoh Park ,  Kuntack Lee ,  Hyosan Lee ,  Sol Han

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/768

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US12216408B2

公开(公告)日：2025-02-04

申请号：US17673978

申请日：2022-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Jihoon Jeong ,  Younghoo Kim ,  Kuntack Lee

IPC: G03F7/16

Abstract: An apparatus for drying a wafer, includes: a drying chamber; a supercritical fluid supply module configured to supply supercritical fluid to the drying chamber; a main exhaust line connected to the drying chamber and in which a main valve is installed; and an auxiliary exhaust unit connected to the main exhaust line. The auxiliary exhaust unit includes: an auxiliary exhaust line connected to the main exhaust line and configured to exhaust the supercritical fluid from the drying chamber when the main valve is closed; a negative pressure tank installed in the auxiliary exhaust line; a first valve, installed in the auxiliary exhaust line, that is configured to be opened when the main valve is closed; and a second valve, installed in the auxiliary exhaust line, that is configured to be opened in conjunction with the first valve.

公开(公告)号：US20240036476A1

公开(公告)日：2024-02-01

申请号：US18120916

申请日：2023-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjine Park ,  Jihwan Park ,  Kuntack Lee

IPC: G03F7/20 ,  H01J37/32

CPC classification number: G03F7/70033 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32715

Abstract: Provided is a substrate processing apparatus including a processing chamber including a processing space, a substrate support configured to support a substrate in the processing chamber, an exhaust pipe arranged on a bottom wall of the processing chamber, an exhaust device configured to exhaust a fluid in the processing space via the exhaust pipe, a first supply pipe including a first portion inserted into the exhaust pipe and a second portion outside the exhaust pipe, and a fluid supply device configured to supply a fluid in a supercritical state to the processing space via the first supply pipe, wherein a first inlet at an end portion of the first supply pipe and an exhaust opening at an end portion of the exhaust pipe are on a central axis of the processing chamber.

公开(公告)号：US11881426B2

公开(公告)日：2024-01-23

申请号：US17735723

申请日：2022-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Kuntack Lee ,  Jihwan Park ,  Seungmin Shin

IPC: H01L21/687 ,  G03F7/40 ,  G03F7/20

CPC classification number: H01L21/68707 ,  G03F7/40 ,  G03F7/2004

Abstract: A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

公开(公告)号：US11646203B2

公开(公告)日：2023-05-09

申请号：US16925532

申请日：2020-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyeong Lee ,  Minkyu Park ,  Insun Yi ,  Beomseok Kim ,  Youngseok Kim ,  Kuntack Lee

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/108 ,  H01L27/115 ,  H01J37/32 ,  C23C16/511 ,  C23C16/46 ,  C23C16/40

CPC classification number: H01L21/0262 ,  C23C16/401 ,  C23C16/46 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32192 ,  H01J37/32724 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/10888 ,  H01L27/115 ,  H01L29/6681 ,  H01J2237/332 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598

Abstract: A thin film formation apparatus includes a chamber, a platen disposed within the chamber, a heater configured to heat the platen within the chamber, a gas inlet communicating with an interior of the chamber and configured to supply a reducing gas and inert gas to the interior of the chamber, a target disposed within the chamber and spatially separated from the platen, and a microwave plasma source disposed adjacent to the target. The reducing gas includes at least one of hydrogen (H2) and deuterium (D2).

公开(公告)号：US11471996B2

公开(公告)日：2022-10-18

申请号：US16662439

申请日：2019-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchul Han ,  Yonghee Lee ,  Taemin Earmme ,  Byoungho Kwon ,  Kuntack Lee

IPC: B24B37/005 ,  B24B37/20

Abstract: A conditioner of a chemical mechanical polishing (CMP) apparatus includes a disk to polish a polishing pad of the CMP apparatus, a driver to rotate the disk, a lifter to lift the driver, an arm to rotate the lifter, and a connector to connect the driver to the lifter, the driver being tiltable with respect to the lifter.

公开(公告)号：US20220326617A1

公开(公告)日：2022-10-13

申请号：US17488456

申请日：2021-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjine Park ,  Jihoon Jeong ,  Younghoo Kim ,  Kuntack Lee

IPC: G03F7/38 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second temperature lower than the first temperature onto the substrate, thereby replacing a residue of the first developer remaining after the development process with a second developer, transferring the substrate from the development device to a supercritical drying device, and supplying, by the supercritical drying device, at least one of a supercritical fluid and a subcritical fluid onto the substrate, thereby drying the second developer.

公开(公告)号：US20220159788A1

公开(公告)日：2022-05-19

申请号：US17348753

申请日：2021-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehong Kim ,  Younghoo Kim ,  Sunghyun Park ,  Kuntack Lee

IPC: H05B1/02 ,  H01L21/687 ,  H01L21/67

Abstract: A substrate heating apparatus includes: a plurality of heating lamps disposed on a chuck stage; a window disposed on the chuck stage and including a window base and a central lens, wherein the chuck stage and the window are each configured to support a substrate above the heating lamps; and a mirror disposed between the heating lamps and the chuck stage, the mirror including a mirror base, a central reflector, and an edge reflector, wherein the plurality of heating lamps are configured to heat the substrate by emitting light through the window onto the substrate and emitting light onto the mirror, wherein the mirror is configured to reflect the light through the window onto the substrate, including reflecting portions of the light via the central and edge reflectors, and wherein the central lens is configured to focus the light onto the central portion of the substrate.

公开(公告)号：US20220075268A1

公开(公告)日：2022-03-10

申请号：US17466101

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Seohyun Kim ,  Sukhoon Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: G03F7/16 ,  G03F7/20

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.