公开(公告)号：US20120294421A1

公开(公告)日：2012-11-22

申请号：US13522474

申请日：2011-01-27

Applicant: Taihei Mukaide ,  Takashi Noma ,  Kazunori Fukuda ,  Masatoshi Watanabe ,  Kazuhiro Takada

Inventor： Taihei Mukaide ,  Takashi Noma ,  Kazunori Fukuda ,  Masatoshi Watanabe ,  Kazuhiro Takada

IPC: G01T1/36 ,  G01N23/04

CPC classification number: G01T1/29 ,  G01N23/04

Abstract: An X-ray imaging apparatus acquiring a differential phase contrast image of a test object without using a light-shielding mask for X-ray. The apparatus includes an X-ray source, a splitting element configured to spatially divide an X-ray emitted from an X-ray source and a scintillator configured to emit light when a divided X-ray beam divided at the splitting element is incident on the scintillator. The apparatus also includes a light-transmission limiting unit configured to limit transmitting amount of the light emitted from the scintillator and a plurality of light detectors each configured to detect the amount of light that has transmitted through the light-transmission limiting unit. The light-transmission limiting unit is configured such that a light intensity detected at each of the light detectors changes in response to a change in an incident position of the X-ray beam.

Abstract translation: 一种X射线成像装置，在不使用用于X射线的遮光掩模的情况下获取被测物体的差分相位差图像。 该装置包括X射线源，分配元件，被配置为空间上划分从X射线源发射的X射线;以及闪烁器，其被配置为当分裂元件分割的分割的X射线束入射到所述X射线源时发光 闪烁体。 该装置还包括：光限制单元，被配置为限制从闪烁体发射的光的发射量;以及多个光检测器，每个光检测器被配置为检测透射通过光传输限制单元的光量。 光传输限制单元被配置为使得在每个光检测器处检测到的光强度响应于X射线束的入射位置的变化而变化。

公开(公告)号：US08214158B2

公开(公告)日：2012-07-03

申请号：US12526418

申请日：2009-03-11

Applicant: Taihei Mukaide ,  Kazuhiro Takada ,  Masatoshi Watanabe

Inventor： Taihei Mukaide ,  Kazuhiro Takada ,  Masatoshi Watanabe

IPC: G01N31/00

CPC classification number: G21K1/10 ,  A61B6/484 ,  G01N23/046 ,  G01N23/06 ,  G01N23/20 ,  G01N2223/419 ,  G21K2207/005

Abstract: A simplified X-ray imaging apparatus is capable of computationally determining effective atomic numbers with small error factors even for light elements. In one embodiment, the X-ray imaging apparatus has an X-ray generation unit 101 (400) for generating X-rays and a detector 105 (405) for detecting X-rays transmitted through an object of examination 104 (403). A computing unit 106 (406) computationally determines a quantity of an X-ray phase attributable to the object of examination and an X-ray transmittance of the object of examination from data detected by the detector. The computing unit also computationally determines an effective atomic number of the object of examination from ρet determined from the quantity of the X-ray phase and μt determined from the X-ray transmittance.

Abstract translation: 简化的X射线成像装置能够计算确定即使对于轻元素也具有小的误差因子的有效原子数。 在一个实施例中，X射线成像装置具有用于产生X射线的X射线产生单元101（400）和用于检测透过检查对象104（403）的X射线的检测器105（405）。 计算单元106（406）根据由检测器检测到的数据，计算地确定归因于检查对象的X射线相位的数量和检查对象的X射线透射率。 计算单元还根据从X射线相位的量和从X射线透射率确定的μt来确定检查对象的有效原子序数。

公开(公告)号：US08147132B2

公开(公告)日：2012-04-03

申请号：US12390803

申请日：2009-02-23

Applicant: Akira Morita ,  Jun Yamamoto ,  Kazuyuki Ueda ,  Taihei Mukaide

Inventor： Akira Morita ,  Jun Yamamoto ,  Kazuyuki Ueda ,  Taihei Mukaide

IPC: G01N25/02

CPC classification number: H01M8/04679 ,  H01M8/04365 ,  H01M8/0438 ,  H01M8/04559 ,  H01M8/04589 ,  H01M8/04649 ,  H01M2008/1095

Abstract: In a method for detecting the freezing of water within a fuel cell, precise detection can be performed using a phenomenon specific to the time when water starts to freeze to allow a reduction in erroneous activation. Detection at an early stage after the start of freezing is allowed, and hence measures can be taken against an output reduction before the water within the fuel cell completely freezes.

Abstract translation: 在用于检测燃料电池内的水的冷冻的方法中，可以使用特定于水开始冻结的时间的现象进行精确检测，以允许减少错误的激活。 允许在开始冷冻之后的早期检测，因此在燃料电池内的水完全冻结之前，可以采取措施来防止输出减少。

公开(公告)号：US20110168905A1

公开(公告)日：2011-07-14

申请号：US12984515

申请日：2011-01-04

Applicant: Hisato Yabuta ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masatoshi Watanabe ,  Taihei Mukaide ,  Kazunori Fukuda

Inventor： Hisato Yabuta ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masatoshi Watanabe ,  Taihei Mukaide ,  Kazunori Fukuda

IPC: G01T1/02 ,  H01L31/18

CPC classification number: G01T1/2928 ,  H01L31/085

Abstract: An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide.

Abstract translation: X射线检测器包括：X射线光电转换层，被配置为与入射在该层上的X射线照射成比例地产生电荷;收集电极，被配置为收集由X射线光电转换层产生的电荷; 配置在与集电电极相反的X射线光电转换层的表面上的公共电极，配置为存储由集电极收集的电荷的存储电容器，以及读出单元，被配置为读出存储在存储器中的电荷 电容器。 在集电极和公共电极之间施加电压。 X射线光电转换层由多晶氧化物形成。

公开(公告)号：US20100318302A1

公开(公告)日：2010-12-16

申请号：US12526418

申请日：2009-03-11

Applicant: Taihei Mukaide ,  Kazuhiro Takada ,  Masatoshi Watanabe

Inventor： Taihei Mukaide ,  Kazuhiro Takada ,  Masatoshi Watanabe

IPC: G06F19/00 ,  G01N23/04

CPC classification number: G21K1/10 ,  A61B6/484 ,  G01N23/046 ,  G01N23/06 ,  G01N23/20 ,  G01N2223/419 ,  G21K2207/005

Abstract: A simplified X-ray imaging apparatus is capable of computationally determining effective atomic numbers with small error factors even for light elements. The X-ray imaging apparatus has an X-ray generation unit 101 (400) for generating X-rays and a detector 105 (405) for detecting X-rays transmitted through an object of examination 104 (403). A computing unit 106 (406) computationally determines a quantity of an X-ray phase attributable to the object of examination and an X-ray transmittance of the object of examination from data detected by the detector. The computing unit also computationally determines an effective atomic number of the object of examination from ρet determined from the quantity of the X-ray phase and μt determined from the X-ray transmittance.

Abstract translation: 简化的X射线成像装置能够计算确定即使对于轻元素也具有小的误差因子的有效原子数。 X射线成像装置具有用于产生X射线的X射线产生单元101（400）和用于检测通过检查对象104（403）传输的X射线的检测器105（405）。 计算单元106（406）根据由检测器检测到的数据，计算地确定归因于检查对象的X射线相位的数量和检查对象的X射线透射率。 计算单元还根据从X射线相位的量和从X射线透射率确定的μt来确定检查对象的有效原子序数。

公开(公告)号：US07659137B2

公开(公告)日：2010-02-09

申请号：US11088719

申请日：2005-03-25

Applicant: Shintaro Kasai ,  Toshihiko Ouchi ,  Masatoshi Watanabe ,  Mitsuru Ohtsuka ,  Taihei Mukaide

Inventor： Shintaro Kasai ,  Toshihiko Ouchi ,  Masatoshi Watanabe ,  Mitsuru Ohtsuka ,  Taihei Mukaide

IPC: H01L21/20

CPC classification number: H01S1/02 ,  H01L31/1035 ,  H01L31/184 ,  Y02E10/544

Abstract: A fabrication method of fabricating a structure capable of being used for generation or detection of electromagnetic radiation includes a forming step of forming a layer containing a compound semiconductor on a substrate at a substrate temperature below about 300° C., a first heating step of heating the substrate with the layer in an ambience containing arsenic, and a second heating step of heating the substrate with the layer at the substrate temperature above about 600° C. in a gas ambience incapable of chemically reacting on the compound semiconductor. Structures of the present invention capable of being used for generation or detection of electromagnetic radiation can be fabricated using the fabrication method by appropriately regulating the substrate temperature, the heating time, the gas ambience and the like in the second heating step.

Abstract translation: 制造能够用于电磁辐射的产生或检测的结构的制造方法包括：形成步骤，在基板温度低于约300℃时，在基板上形成含有化合物半导体的层，第一加热步骤，加热 所述衬底具有包含砷的环境中的层，以及第二加热步骤，在不能对化合物半导体进行化学反应的气体环境中，使衬底温度高于约600℃的衬底加热衬底。 能够利用第二加热工序适当地调节基板温度，加热时间，气氛等的制造方法来制造能够用于电磁辐射的产生或检测的本发明的结构。

公开(公告)号：US20060014954A1

公开(公告)日：2006-01-19

申请号：US10533454

申请日：2003-12-26

Applicant: Taihei Mukaide

Inventor： Taihei Mukaide

IPC: C07F15/00

CPC classification number: C07D217/02

Abstract: A porous structure includes an organic metal complex represented by the following general formula (1): M·L(A,B)3  (1) (where M represents a metal atom; L (A, B) represents a ligand constituted of A and B; and A and B respectively represent cyclic groups which may have or may not have one or more substituents).

Abstract translation: 多孔结构包括由以下通式（1）表示的有机金属络合物：<？in-line-formula description =“In-line formula”end =“lead”？> ML（A，B）3 （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中M表示金属原子; L（A，B）表示由A构成的配体， B; A和B分别表示可具有或不具有一个或多个取代基的环状基团）。

公开(公告)号：US20050233490A1

公开(公告)日：2005-10-20

申请号：US11088719

申请日：2005-03-25

Applicant: Shintaro Kasai ,  Toshihiko Ouchi ,  Masatoshi Watanabe ,  Mitsuru Ohtsuka ,  Taihei Mukaide

Inventor： Shintaro Kasai ,  Toshihiko Ouchi ,  Masatoshi Watanabe ,  Mitsuru Ohtsuka ,  Taihei Mukaide

IPC: G02F2/02 ,  G01J5/02 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/0248 ,  H01L31/103 ,  H01L31/12 ,  H01L31/18 ,  H01S1/02 ,  H01S5/04 ,  H01S5/30 ,  H01L33/00

CPC classification number: H01S1/02 ,  H01L31/1035 ,  H01L31/184 ,  Y02E10/544

Abstract: A fabrication method of fabricating a structure capable of being used for generation or detection of electromagnetic radiation includes a forming step of forming a layer containing a compound semiconductor on a substrate at a substrate temperature below about 300° C., a first heating step of heating the substrate with the layer in an ambience containing arsenic, and a second heating step of heating the substrate with the layer at the substrate temperature above about 600° C. in a gas ambience incapable of chemically reacting on the compound semiconductor. Structures of the present invention capable of being used for generation or detection of electromagnetic radiation can be fabricated using the fabrication method by appropriately regulating the substrate temperature, the heating time, the gas ambience and the like in the second heating step.

Abstract translation: 制造能够用于电磁辐射的产生或检测的结构的制造方法包括：形成步骤，在基板温度低于约300℃时，在基板上形成含有化合物半导体的层，第一加热步骤，加热 所述衬底具有包含砷的环境中的层，以及第二加热步骤，在不能对化合物半导体进行化学反应的气体环境中，使衬底温度高于约600℃的衬底加热衬底。 能够利用第二加热工序适当地调节基板温度，加热时间，气氛等的制造方法来制造能够用于电磁辐射的产生或检测的本发明的结构。