公开(公告)号：US08786500B2

公开(公告)日：2014-07-22

申请号：US13204032

申请日：2011-08-05

Applicant: Sang-Jin Eom ,  Jin-Kyu Bang ,  Ho-Saeng Kim ,  Yong-Jin Kim ,  Jin-U Kim

Inventor： Sang-Jin Eom ,  Jin-Kyu Bang ,  Ho-Saeng Kim ,  Yong-Jin Kim ,  Jin-U Kim

IPC: H01Q1/24

CPC classification number: H01Q1/243 ,  H01Q5/371 ,  H01Q5/378 ,  H01Q9/42 ,  Y10T29/49018

Abstract: A built-in antenna of a portable terminal and a method of forming the same are provided. The built-in antenna includes a first conductor having a specific length and used for a ground, a second conductor disposed with a specific distance in parallel to the first conductor to couple with the first conductor and used for power feeding, and a separating element disposed between the first conductor and the second conductor to separate the first and second conductors. Accordingly, the built-in antenna may exhibit a smooth radiation property even if a metal construction is used in a device and thus may implement robustness improvement of the device and make the device slim and have an attractive outer appearance. In addition, a method of improving antenna efficiency may prevent deterioration of the radiation property of the antenna radiator of the related art by using simple processing, and the metal construction may be used as a radiator.

Abstract translation: 提供了便携式终端的内置天线及其形成方法。 内置天线包括具有特定长度并用于地面的第一导体，与第一导体平行设置的具有特定距离的第二导体，以与第一导体耦合并用于馈电，以及分离元件设置 在第一导体和第二导体之间，以分离第一和第二导体。 因此，即使在设备中使用金属结构，内置天线也可以呈现平滑的辐射特性，因此可以实现设备的鲁棒性改善并且使设备变得苗条并且具有有吸引力的外观。 此外，通过使用简单的处理，提高天线效率的方法可以防止现有技术的天线辐射体的辐射特性的劣化，并且金属结构可以用作散热器。

公开(公告)号：US08545159B2

公开(公告)日：2013-10-01

申请号：US10956389

申请日：2004-10-01

Applicant: Chul-Joo Hwang ,  Yong-Jin Kim

Inventor： Chul-Joo Hwang ,  Yong-Jin Kim

IPC: B65G49/07 ,  H01L21/677

CPC classification number: B65G49/064 ,  B65G49/067 ,  B65G2249/02

Abstract: An apparatus for a liquid crystal display device includes: a process chamber for treating a substrate; a load-lock chamber having an interior conveyor; and a transfer chamber connected to the process chamber and the at least one load-lock chamber, the transfer chamber having a substrate-transferring means.

Abstract translation: 一种液晶显示装置的装置，包括：处理基板的处理室; 具有内部输送机的装载锁定室; 以及连接到所述处理室和所述至少一个装载锁定室的传送室，所述传送室具有基板传送装置。

公开(公告)号：US08412122B2

公开(公告)日：2013-04-02

申请号：US12835110

申请日：2010-07-13

Applicant: Ki-Soo Kim ,  Yong-Joo Shin ,  Ki-Jeong Kwon ,  Yong-Jin Kim ,  Austin Kim ,  Jae-Ho Lee

Inventor： Ki-Soo Kim ,  Yong-Joo Shin ,  Ki-Jeong Kwon ,  Yong-Jin Kim ,  Austin Kim ,  Jae-Ho Lee

IPC: H04B1/40

CPC classification number: H01Q1/243 ,  H04B1/0458 ,  H04W28/18 ,  H04W64/00 ,  H04W88/02

Abstract: An apparatus and method for antenna matching according to a position and an angle of a portable terminal is provided. Operations of the portable terminal include, when at least one of a position and an angle of the portable terminal is changed, determining an optimal Tunable Matching Network (TMN) set value corresponding to the position and the angle, and performing antenna matching according to the optimal TMN set value.

Abstract translation: 提供了一种根据便携式终端的位置和角度进行天线匹配的装置和方法。 便携式终端的操作包括当便携式终端的位置和角度中的至少一个改变时，确定与该位置和角度相对应的最佳可调匹配网络（TMN）设置值，并且根据 最优TMN设定值。

公开(公告)号：US08278786B2

公开(公告)日：2012-10-02

申请号：US12752669

申请日：2010-04-01

Applicant: Ki-Suk Woo ,  Kyung-Ho Lee ,  Jun-Kun Choi ,  Yong-Jin Kim ,  Hwa-Young Oh ,  Je-Hyun Bang ,  Young-Bok Yoon ,  Suck-Jun Park ,  Kwang-Hyung Lee

Inventor： Ki-Suk Woo ,  Kyung-Ho Lee ,  Jun-Kun Choi ,  Yong-Jin Kim ,  Hwa-Young Oh ,  Je-Hyun Bang ,  Young-Bok Yoon ,  Suck-Jun Park ,  Kwang-Hyung Lee

IPC: H02K33/00

CPC classification number: H02K33/16

Abstract: A linear vibrator is disclosed. The linear vibrator in accordance with an embodiment of the present invention includes a base, a coil unit, which is coupled to the base, a magnet assembly, which forms a closed circuit of a magnetic force perpendicular to an electric current flowing through the coil unit and in which the magnet assembly relatively moves with respect to the coil unit, and an elastic member, which elastically supports the magnet assembly. Thus, a linear vibrator with an increased driving force can be provided by preventing the leakage of magnetic flux.

Abstract translation: 公开了线性振动器。 根据本发明的实施例的线性振动器包括基座，耦合到基座的线圈单元，磁体组件，其形成与流过线圈单元的电流垂直的磁力的闭合电路 并且其中磁体组件相对于线圈单元相对移动，以及弹性构件，其弹性地支撑磁体组件。 因此，可以通过防止磁通量的泄漏来提供具有增加的驱动力的线性振动器。

公开(公告)号：US20120244034A1

公开(公告)日：2012-09-27

申请号：US13378756

申请日：2009-12-16

Applicant: Yong-Jin Kim ,  Sangsun Yang ,  Tae-Soo Lim

Inventor： Yong-Jin Kim ,  Sangsun Yang ,  Tae-Soo Lim

IPC: B22F9/04 ,  C22C21/04 ,  C22B9/16

CPC classification number: C22C1/1042 ,  B22F2009/0816

Abstract: Disclosed herein are a method and an apparatus for preparing a metal composite powder by using gas spraying. The method of preparing a metal composite powder by using gas spraying includes introducing a matrix phase in a chamber, including a reinforcing phase in the chamber, melting the introduced matrix phase to form a melt, adding the reinforcing phase in the melt, stirring the melt with the added reinforcing phase to form a melt mixture, atomizing the melt mixture together with a gas to form a metal composite powder containing the reinforcing phase, and collecting the metal composite powder formed.

Abstract translation: 本文公开了通过使用气体喷射来制备金属复合粉末的方法和装置。 通过使用气体喷射制备金属复合粉末的方法包括在室中引入基质相，包括在室中的增强相，熔化引入的基质相以形成熔体，将增强相加入熔体中，搅拌熔体 加入增强相以形成熔融混合物，将熔融混合物与气体一起雾化以形成含有增强相的金属复合粉末，并收集所形成的金属复合粉末。

公开(公告)号：US08138003B2

公开(公告)日：2012-03-20

申请号：US13031425

申请日：2011-02-21

Applicant: Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

Inventor： Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

IPC: H01L21/00

CPC classification number: H01L21/02658 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0254

Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

Abstract translation: 氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。 本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部分向周边部分生长氮化物半导体膜时，吸收或减小施加更大的应力。 也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

公开(公告)号：US20120055908A1

公开(公告)日：2012-03-08

申请号：US13220084

申请日：2011-08-29

Applicant: Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

Inventor： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

IPC: B23K26/36 ,  B23K26/04

CPC classification number: B23K26/0661 ,  B23K26/032 ,  B23K26/361 ,  H01J37/32972 ,  H01L22/12 ,  H01L22/26

Abstract: Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

Abstract translation: 提供了蚀刻系统和控制蚀刻工艺条件的方法。 蚀刻系统包括将入射光照射到目标晶片中的光源，光强度测量单元，其根据由来自目标晶片的反射光之间的干涉产生的干涉光的波长来测量光强度;信号处理器，其检测 当干扰光的强度根据波长变化时产生强度极值的时间点，以及将从信号处理器检测的极值产生时间点与对应于极值的参考时间点进行比较的控制器 产生时间点，并根据比较结果控制过程条件。

公开(公告)号：US20120048638A1

公开(公告)日：2012-03-01

申请号：US13191879

申请日：2011-07-27

Applicant: Yong-Jin Kim ,  Seung-Won Kim ,  Kong-Sup Jung ,  Hyo-Seok Kim

Inventor： Yong-Jin Kim ,  Seung-Won Kim ,  Kong-Sup Jung ,  Hyo-Seok Kim

IPC: B60K5/04 ,  B60K5/12

CPC classification number: B60K5/1241 ,  B60K5/04 ,  B60K17/24 ,  B62D21/11

Abstract: A structure of an engine mount is provided for a vehicle in which an engine is disposed in the front of the vehicle, a front wheel is driven, and the engine is integrally coupled with a transmission to be seated horizontally on a vehicle body in a transverse mounting direction. The structure may include a driveshaft coupled to receive the driving force of the engine through the transmission and penetrate a center bearing through a bearing bracket fixed to the engine, a subframe as a plate shape coupled to the vehicle body in a rear lower part of the engine and coupled to a lower part of the transmission through a main roll rod mounted on the front, and a sub-roll rod having one end connected to the subframe and the other end connected to the bearing bracket.

Abstract translation: 发动机支架的结构为发动机设置在车辆的前部而被驱动的车辆提供，并且发动机与变速器一体地联接，以使车身横向放置在横向 安装方向。 该结构可以包括被连接以通过传动装置接收发动机的驱动力的驱动轴，并通过固定在发动机上的轴承架穿过中心轴承，将副车架作为联接到车身的板形在后部的下部 发动机，并且通过安装在前部的主辊杆耦合到变速器的下部;以及副辊杆，其一端连接到副车架，另一端连接到轴承座。

公开(公告)号：US08124497B2

公开(公告)日：2012-02-28

申请号：US12955222

申请日：2010-11-29

Applicant: Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

Inventor： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC: H01L21/762

CPC classification number: H01L21/0254 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.

Abstract translation: 公开了一种制造氮化物半导体器件的方法。 该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底 通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。

公开(公告)号：US20120003824A1

公开(公告)日：2012-01-05

申请号：US13019146

申请日：2011-02-01

Applicant: Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

Inventor： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC: H01L21/20

CPC classification number: H01L21/302 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664

Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

Abstract translation: 提供了一种制造氮化镓（GaN）晶片的方法。 在根据实施例的制造GaN晶片的方法中，在衬底上形成蚀刻停止层，并且在蚀刻停止层上形成第一GaN层。 用硅烷气蚀刻第一GaN层的一部分，在蚀刻的第一GaN层上形成第二GaN层。 在第二GaN层上形成第三GaN层。