公开(公告)号：US08391605B2

公开(公告)日：2013-03-05

申请号：US13358497

申请日：2012-01-25

Applicant: Duan-Fu Stephen Hsu ,  Jung Chul Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

Inventor： Duan-Fu Stephen Hsu ,  Jung Chul Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC: G06K9/00 ,  G06F17/50

CPC classification number: G06T7/0004 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70466 ,  G03F7/70475

Abstract: A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.

Abstract translation: 一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。 该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

公开(公告)号：US08132130B2

公开(公告)日：2012-03-06

申请号：US11472544

申请日：2006-06-22

Applicant: Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke ,  Thomas Laidig

Inventor： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke ,  Thomas Laidig

IPC: G06F17/50

CPC classification number: G03F7/70466 ,  G03F1/70

Abstract: A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure mask or a second exposure mask; applying the decomposition rules to each of the features in the target pattern so as to assign each of the features in the target pattern to one of the first exposure mask or second exposure mask; and generating the first exposure mask and the second exposure mask containing the respective features assigned to each mask.

Abstract translation: 一种形成曝光掩模的方法，用于在多曝光过程中对具有要被成像的特征的目标图案进行成像。 该方法包括以下步骤：产生一组分解规则，定义目标图案的给定特征是否被分配给第一曝光掩模或第二曝光掩模; 将分解规则应用于目标图案中的每个特征，以将目标图案中的每个特征分配给第一曝光掩模或第二曝光掩模之一; 以及生成包含分配给每个掩模的各个特征的第一曝光掩模和第二曝光掩模。

公开(公告)号：US20110317908A1

公开(公告)日：2011-12-29

申请号：US13170126

申请日：2011-06-27

Applicant: Jung Chul Park

Inventor： Jung Chul Park

IPC: G06K9/00

CPC classification number: G03F1/70

Abstract: The present invention discloses a method for decomposing a target pattern containing features to be printed on a wafer, into multiple patterns, the features having a plurality of patterns within a minimum pitch for processes utilized to image the target pattern. The method includes superposing a predefined kernel over a pixel, and moving the kernel from one pixel to another, the pixels representing the sub-patterns of the target pattern. Polarity of the kernel may be reversed when the pixel has a stored intensity value that is negative.

Abstract translation: 本发明公开了一种用于将包含待印刷的特征的目标图案分解成多个图案的方法，所述特征具有用于对目标图案成像的处理的最小间距内的多个图案。 该方法包括在像素上叠加预定义的内核，并将内核从一个像素移动到另一个像素，像素表示目标图案的子图案。 当像素具有存储的负值的强度值时，内核的极性可能会反转。

公开(公告)号：US08039180B2

公开(公告)日：2011-10-18

申请号：US13032590

申请日：2011-02-22

Applicant: Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

Inventor： Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC: G03F9/00

CPC classification number: G03F1/36

Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

公开(公告)号：US07892703B2

公开(公告)日：2011-02-22

申请号：US11501916

申请日：2006-08-10

Applicant: Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke ,  Jung Chul Park ,  Thomas Laidig

Inventor： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke ,  Jung Chul Park ,  Thomas Laidig

IPC: G03F1/00 ,  G03F7/00

CPC classification number: G03F1/34 ,  G03F1/32

Abstract: A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.

Abstract translation: 一种生成用于打印包括多个特征的图案的掩模的方法。 该方法包括获取表示多个特征的数据的步骤; 以及通过蚀刻基底以形成台面并在所述台面的整个上表面上沉积铬层，形成所述多个特征中的至少一个，其中所述台面具有预定高度。

公开(公告)号：US07824826B2

公开(公告)日：2010-11-02

申请号：US11783261

申请日：2007-04-06

Applicant: Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

Inventor： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC: G03F1/00 ,  G03F1/14 ,  G03F7/20 ,  G06F17/50

CPC classification number: G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

Abstract: A method of generating complementary dark field masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.This method is enabled by a non-transitory computer readable medium configured to store program instructions for execution by a processor. The complementary dark field masks are used for patterning a layer of radiation-sensitive material in a device manufacturing method.

Abstract translation: 一种产生用于暗场双偶极成像过程的互补暗场掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。 该方法由配置为存储用于由处理器执行的程序指令的非暂时计算机可读介质启用。 互补暗场掩模用于在器件制造方法中图案化一层辐射敏感材料。

公开(公告)号：US20100047699A1

公开(公告)日：2010-02-25

申请号：US12613344

申请日：2009-11-05

Applicant: Douglas Van Den BROEKE ,  Jang Fung Chen

Inventor： Douglas Van Den BROEKE ,  Jang Fung Chen

IPC: G03F1/00 ,  G06F17/50

CPC classification number: G03F7/70441 ,  G03F1/36

Abstract: A method of generating a mask having optical proximity correction features. The method includes the steps of: (a) obtaining a desired target pattern having features to be imaged on a substrate; (b) determining a first focus setting to be utilized when imaging the mask; (c) determining a first interference map based on the target pattern and the first focus setting; (d) determining a first seeding site representing the optimal placement of an assist feature within the mask relative to a feature to be imaged on the basis of the first interference map; (e) selecting a second focus setting which represents a predefined amount of defocus relative to the first focus setting; (f) determining a second interference map based on the target pattern and the second focus setting; (g) determining a second seeding site representing the optimal placement of an assist feature within the mask relative to the feature to be imaged on the basis of the second interference map; and (h) generating an assist feature having a shape which encompasses both the first seeding site and the second seeding site.

Abstract translation: 一种产生具有光学邻近校正特征的掩模的方法。 该方法包括以下步骤：（a）获得具有要在基底上成像的特征的期望目标图案; （b）确定在对所述掩模进行成像时要利用的第一焦点设置; （c）基于目标图案和第一焦点设置确定第一干涉图; （d）基于所述第一干涉图，确定表示所述掩模内的辅助特征相对于要成像的特征的最佳布置的第一播种站点; （e）选择表示相对于第一焦点设置的预定义散焦量的第二焦点设置; （f）基于目标图案和第二焦点设置确定第二干涉图; （g）基于所述第二干涉图，确定代表所述掩模内的辅助特征相对于要成像的特征的最佳布置的第二播种站点; 和（h）产生具有包含第一播种部位和第二播种部位的形状的辅助特征。

公开(公告)号：US07667216B2

公开(公告)日：2010-02-23

申请号：US11708029

申请日：2007-02-20

Applicant: Doug Van Den Broeke ,  Chungwei Hsu ,  Jang Fung Chen

Inventor： Doug Van Den Broeke ,  Chungwei Hsu ,  Jang Fung Chen

IPC: G01N21/86 ,  G03F1/00 ,  G06F17/50

CPC classification number: G03F1/36 ,  G03F1/34

Abstract: A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.

Abstract translation: 一种生成用于打印包括具有不同临界尺寸的多个特征的图案的掩模的方法。 该方法包括以下步骤：（1）获取表示图案的数据; （2）基于所述多个特征的临界尺寸定义多个不同区域; （3）将每个特征分类为多个不同区域中的一个; 以及（4）对于分类为所述多个不同区域中的预定义的不同区域的每个特征修改所述掩模图案。

公开(公告)号：US20090053621A1

公开(公告)日：2009-02-26

申请号：US12186410

申请日：2008-08-05

Applicant: Robert Socha

Inventor： Robert Socha

IPC: G03F1/00

CPC classification number: G06T7/001 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70433 ,  G03F7/705

Abstract: An illumination source is optimized by changing the intensity and shape of the illumination source to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. An optimum mask may be determined by changing the magnitude and phase of the diffraction orders to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. Primitive rectangles having a size set to a minimum feature size of a mask maker are assigned to the located minimum and maximum transmission areas ad centered at a desired location. The edges of the primitive rectangle are varied to match optimal diffraction orders O(m,n). The optimal CPL mask OCPL(x,y) is then formed.

Abstract translation: 通过改变照射源的强度和形状来优化照明光源，以在图像平面中形成图像，使得在用户选择的碎片点处的最小ILS最大化，同时迫使碎裂点处的强度处于小的强度范围内。 可以通过改变衍射级的大小和相位来确定最佳掩模，以在图像平面中形成使用户选择的碎片点处的最小ILS最大化的图像，同时迫使碎裂点处的强度在小的强度范围内。 具有设置为掩模制造者的最小特征尺寸的尺寸的原始矩形被分配给位于期望位置的所定位的最小和最大传输区域。 改变原始矩形的边缘以匹配最佳衍射阶数O（m，n）。 然后形成最佳CPL掩模OCPL（x，y）。

公开(公告)号：US07433791B2

公开(公告)日：2008-10-07

申请号：US11708137

申请日：2007-02-20

Applicant: Sangbong Park ,  Duan-Fu Stephen Hsu ,  Edita Tejnil

Inventor： Sangbong Park ,  Duan-Fu Stephen Hsu ,  Edita Tejnil

IPC: G01D18/00 ,  G01B9/00

CPC classification number: G03F7/705

Abstract: A method of calibrating a simulation model of a photolithography process. The method includes the steps of defining a set of input data; defining a simulation model having model parameters which affect the simulation result produced by the simulation model; performing a first stage calibration process in which the model parameters and alignment parameters are adjusted such that the simulation result is within a first predefined error tolerance; and performing a second stage calibration process in which the alignment parameters are fixed and the model parameters are adjusted such that the simulation result is within a second predefined error tolerance.

Abstract translation: 校准光刻工艺的仿真模型的方法。 该方法包括定义一组输入数据的步骤; 定义具有影响仿真模型产生的仿真结果的模型参数的仿真模型; 执行第一阶段校准过程，其中调整模型参数和对准参数，使得模拟结果在第一预定义的误差容限内; 并且执行第二阶段校准过程，其中对准参数是固定的并且模型参数被调整以使得模拟结果在第二预定义的误差容限内。