公开(公告)号：US20080049329A1

公开(公告)日：2008-02-28

申请号：US11782221

申请日：2007-07-24

Applicant: Tetsuya TAKEUCHI

Inventor： Tetsuya TAKEUCHI

IPC: G02B5/28

CPC classification number: H01S5/18369 ,  B82Y20/00 ,  H01L33/105 ,  H01S5/10 ,  H01S5/18358 ,  H01S5/3201 ,  H01S5/34306 ,  H01S5/34333 ,  H01S5/3436

Abstract: Provided are an optical device including a multilayer reflector having a layer whose optical thickness is not λ/4, and a vertical cavity surface emitting laser using the optical device. A resonance frequency shift or a reduction in reflectivity which is caused by a deviation from an optical thickness of λ/4 can be suppressed to improve characteristics and yield. The optical device for generating light of a wavelength λ includes a reflector and an active layer. The reflector is a semiconductor multilayer reflector including a first layer and a second layer which are alternatively laminated and have different refractive indices. The first layer has an optical thickness smaller than λ/4. The second layer has an optical thickness larger than λ/4. The interface between the first layer and the second layer is located at neither a node nor an antinode of an optical intensity distribution within the reflector.

Abstract translation: 提供了包括具有光学厚度不是λ/ 4的层的多层反射器的光学器件和使用该光学器件的垂直腔表面发射激光器。 可以抑制由与λ/ 4的光学厚度的偏差引起的共振频率偏移或反射率的降低，从而改善特性和产率。 用于产生波长λ的光的光学装置包括反射器和有源层。 反射器是包括交替层叠并具有不同折射率的第一层和第二层的半导体多层反射器。 第一层的光学厚度小于λ/ 4。 第二层的光学厚度大于λ/ 4。 第一层和第二层之间的界面不在反射器内的光强度分布的节点和波腹处。

公开(公告)号：US20070248125A1

公开(公告)日：2007-10-25

申请号：US11746160

申请日：2007-05-09

Applicant: Masaki Shiozaki

Inventor： Masaki Shiozaki

IPC: H01S3/10

CPC classification number: H01S5/18355 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/3201

Abstract: A surface emitting semiconductor laser device which can be manufactured easily and inexpensively and in which the direction of polarization of a laser beam can be controlled into a fixed direction. An oxidizing treatment is applied to a current confinement layer to form a current passage region in a rectangular shape having an in-plane anisotropy. In addition, a pair of trenches with their side surfaces, on the side of a beam outgoing aperture, set to be parallel to either of the diagonal direction of the current passage region is provided at opposite positions with the beam outgoing aperture as a center therebetween. The direction of polarization of the laser beam made to go out through the beam outgoing aperture is specified into only one direction, whereby the direction of polarization can be accurately controlled to a fixed direction. Besides, where the trench or trenches are filled with a metallic material or insulating material which is absorptive with respect to the laser beam, the polarization ratio of the laser beam is further enhanced.

Abstract translation: 可以容易且廉价地制造能够将激光束的偏振方向控制在固定方向的表面发射半导体激光器件。 对电流限制层进行氧化处理，形成具有面内各向异性的矩形的电流通路区域。 此外，设置成平行于电流通道区域的对角方向中的任一方的其侧表面侧面的一对沟槽的光束出射孔设置在与出射孔作为中心的相对位置处 。 使通过光束射出孔径出射的激光束的偏振方向仅被指定为一个方向，从而可以精确地将偏振方向控制到固定方向。 此外，在沟槽或沟槽充满相对于激光束吸收的金属材料或绝缘材料的情况下，激光束的偏振比进一步提高。

公开(公告)号：US07260137B2

公开(公告)日：2007-08-21

申请号：US11338220

申请日：2006-01-23

Applicant: Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

Inventor： Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

IPC: H01S5/183

CPC classification number: H01S5/18311 ,  B82Y20/00 ,  H01S5/18308 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3218 ,  H01S5/3219 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34386 ,  H01S5/423

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract translation: 垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在 有源区中的有源层和下反射器。

公开(公告)号：US07215693B2

公开(公告)日：2007-05-08

申请号：US10900935

申请日：2004-07-27

Applicant: Norihiro Iwai ,  Tatsuyuki Shinagawa ,  Noriyuki Yokouchi

Inventor： Norihiro Iwai ,  Tatsuyuki Shinagawa ,  Noriyuki Yokouchi

IPC: H01S5/00

CPC classification number: H01S5/18313 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/3201

Abstract: A surface emitting semiconductor laser device including a substrate, a bottom DBR, and a mesa post having a layer structure, the layer structure including a top DBR including a plurality of pairs, each of said pairs including an Al-containing high-reflectivity layer and an Al-containing low-reflectivity layer, an active layer structure sandwiched between the DBRs for emitting laser, and a current confinement layer disposed within or in a vicinity of one of the DBRs, the current confinement layer including a central current injection area and an annular current blocking area encircling the central current injection area, the annular current blocking area being formed by selective oxidation of Al in an AlXGa1-XAs layer (0.95≦x

Abstract translation: 一种表面发射半导体激光器件，包括具有层结构的衬底，底部DBR和台面柱，所述层结构包括包括多个对的顶部DBR，每个所述对包括含Al的高反射率层和 含Al的低反射率层，夹在用于发射激光的DBR之间的有源层结构以及设置在其中一个DBR内或附近的电流限制层，所述电流限制层包括中心电流注入区域和 围绕中心电流注入区域的环形电流阻挡区域，环形电流阻挡区域是通过在Al x Ga 1-X As As层（0.95 < = x <1），所述含Al低反射层包含原子比不大于0.8且低于0.9的Al。 通过将Al含量限制在规定范围内，可以抑制形成电流限制氧化物区域的含Al化合物半导体层中的氧化进程，从而实现寿命更长的表面发射半导体激光器件，或 更高的可靠性。

公开(公告)号：US07167496B1

公开(公告)日：2007-01-23

申请号：US10634558

申请日：2003-08-04

Applicant: Ralph H. Johnson

Inventor： Ralph H. Johnson

IPC: H01S5/00 ,  H01S3/14

CPC classification number: B82Y20/00 ,  H01S5/183 ,  H01S5/3201 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S2302/00

Abstract: In order to achieve a long wavelength, 1.3 micron or above, VCSEL or other semiconductor laser, layers of strained quantum well material are supported by mechanical stabilizers which are nearly lattice matched with the GaAs substrate, or lattice mismatched in the opposite direction from the quantum well material; to allow the use of ordinary deposition materials and procedures. By interspersing thin, unstrained layers of e.g. gallium arsenide in the quantum well between the strained layers of e.g. InGaAs, the GaAs layers act as mechanical stabilizers keeping the InGaAs layers thin enough to prevent lattice relaxation of the InGaAs quantum well material. Through selection of the thickness and width of the mechanical stabilizers and strained quantum well layers in the quantum well, 1.3 micron and above wavelength lasing is achieved with use of high efficiency AlGaAs mirrors and standard gallium arsenide substrates.

Abstract translation: 为了实现长波长，1.3微米或以上，VCSEL或其他半导体激光器，应变量子阱材料层由与GaAs衬底几乎晶格匹配的机械稳定器支持，或者在与量子相反的方向上晶格失配 井材料; 允许使用普通沉积材料和程序。 通过散布例如薄的，无约束的层。 砷化镓在量子阱中的应变层之间。 InGaAs，GaAs层作为机械稳定剂，保持InGaAs层足够薄以防止InGaAs量子阱材料的晶格弛豫。 通过选择量子阱中的机械稳定器和应变量子阱层的厚度和宽度，使用高效率AlGaAs镜和标准砷化镓衬底来实现1.3微米及以上的波长激光。

公开(公告)号：US07166869B2

公开(公告)日：2007-01-23

申请号：US10801038

申请日：2004-03-16

Applicant: Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa

Inventor： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa

IPC: H01L27/15 ,  H01L31/12

CPC classification number: H01S5/343 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2202 ,  H01S5/3201 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3404 ,  H01S5/3412 ,  H01S5/3413 ,  H01S5/34333

Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

公开(公告)号：US20060273326A1

公开(公告)日：2006-12-07

申请号：US11425595

申请日：2006-06-21

Applicant: Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

Inventor： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract translation: 由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US07139297B2

公开(公告)日：2006-11-21

申请号：US10866901

申请日：2004-06-15

Applicant: Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

Inventor： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

IPC: H01S5/00

CPC classification number: H01S5/2202 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3434

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

公开(公告)号：US07061955B2

公开(公告)日：2006-06-13

申请号：US09953576

申请日：2001-09-14

Applicant: Jin Kwang Kim ,  Andrew Sumika Huntington

Inventor： Jin Kwang Kim ,  Andrew Sumika Huntington

IPC: H01S5/00

CPC classification number: H01L33/145 ,  H01L31/03046 ,  H01L33/10 ,  H01L33/30 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/2215 ,  H01S5/3201 ,  Y02E10/544

Abstract: The present invention creates oxide and air apertures in material systems, such as InP, that do not usually accommodate epitaxial incorporation of highly oxidizing materials, such as AlAs, of sufficient thickness to adequately provide optical as well as current aperturing. A composite structure of relatively slowly oxidizing layer or layers (e.g. AlInAs on InP) with a faster-oxidizing layer or layers (e.g. AlAs on InP) can be used to produce oxide and air apertures of various shapes and sizes, and to also increase the oxidation rate.

公开(公告)号：US06940100B2

公开(公告)日：2005-09-06

申请号：US10335924

申请日：2003-01-03

Applicant: Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Masakatsu Suzuki

Inventor： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Masakatsu Suzuki

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/34333 ,  H01S5/34346

Abstract: A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than that of the barrier layer. The well layer contains indium and nitrogen, while the barrier layer contains aluminum and nitrogen. In this structure, a tensile strain is induced in the barrier layer, and therefore, a compressive strain induced in the quantum well layer can be reduced. As a result, a critical thickness, at which pits are created, can be increased.

Abstract translation: III-V族化合物半导体的半导体发光元件包括量子阱层，该量子阱层形成在衬底上并且包括彼此交替堆叠的势垒层和阱层。 阱层的带隙比阻挡层的带隙窄。 阱层包含铟和氮，而阻挡层含有铝和氮。 在该结构中，在阻挡层中产生拉伸应变，因此能够降低在量子阱层中产生的压缩应变。 因此，可以增加产生凹坑的临界厚度。