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    MEMS MAGNETIC SWITCH WITH PERMEABLE FEATURES
    51.
    发明申请
    MEMS MAGNETIC SWITCH WITH PERMEABLE FEATURES 有权

    公开(公告)号：US20210020386A1

    公开(公告)日：2021-01-21

    申请号：US16931498

    申请日：2020-07-17

    Applicant: Innovative Micro Technology

    Inventor： Christopher GUDEMAN

    IPC: H01H1/00 ,  H01H11/04

    Abstract: Systems and methods for forming a magnetostatic MEMS switch include a movable structure formed in a top surface of a substrate, wherein the movable structure is coupled to the substrate by a plurality of restoring springs anchored to the substrate, a stationary structure formed in the same top surface of the substrate, a conductive shunt bar having a characteristic dimension of about 100 um, wherein the shunt bar is disposed on the movable structure adjacent to the gap, an input electrode and an output electrode disposed on the stationary structure and separated by a distance of about 100 um; and a plurality of permeable magnetic features inlaid into the stationary and movable structures, wherein the movable structure is configured to move relative to the stationary structure by interaction of the permeable features with an applied magnetic field, thereby closing the gap and electrically coupling the input and output electrodes across the conductive shunt bar.

    EIGHT SPRING DUAL SUBSTRATE MEMS PLATE SWITCH AND METHOD OF MANUFACTURE
    52.
    发明申请
    EIGHT SPRING DUAL SUBSTRATE MEMS PLATE SWITCH AND METHOD OF MANUFACTURE 有权

    公开(公告)号：US20210017017A1

    公开(公告)日：2021-01-21

    申请号：US16515943

    申请日：2019-07-18

    Applicant: Innovative Micro Technology

    Inventor： Christopher S. GUDEMAN ,  Paul RUBEL

    IPC: B81B3/00

    Abstract: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A two-fold symmetric switch may be formed by a primary, secondary, and optionally tertiary set of voids formed in the movable plate. These voids may define the spring beams which provide a stable and reliable restoring force to the switch.

    RESONANT FILTER USING MM WAVE CAVITY
    53.
    发明申请
    RESONANT FILTER USING MM WAVE CAVITY 审中-公开

    公开(公告)号：US20190173153A1

    公开(公告)日：2019-06-06

    申请号：US16261489

    申请日：2019-01-29

    Applicant: Innovative Micro Technology

    Inventor： Christopher S. GUDEMAN

    IPC: H01P11/00 ,  H01P1/208 ,  H01P7/06

    Abstract: Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.

    METHOD FOR FORMING THROUGH SUBSTRATE VIAS IN A TRENCH
    54.
    发明申请
    METHOD FOR FORMING THROUGH SUBSTRATE VIAS IN A TRENCH 审中-公开

    公开(公告)号：US20190088598A1

    公开(公告)日：2019-03-21

    申请号：US15710969

    申请日：2017-09-21

    Applicant: Innovative Micro Technology

    Inventor： Christopher S. GUDEMAN ,  Jamie Yao

    IPC: H01L23/535 ,  H01L21/768

    Abstract: A device and method for forming through silicon vias (TSVs) in a composite substrate is disclosed. The through substrate via may include an embedded insulating etch stop layer sandwiched between a first and a second substrate layers. The via may include at least one hole formed in the first substrate layer down to the embedded insulating etch stop layer, an insulator formed onto the walls of the at least one hole, a conductive material disposed in the at least one hole, a trench etched into the second substrate layer on the obverse side of the composite substrate through the second substrate material and through the embedded insulating etch stop layer, directly opposite the at least one hole, and a first metal pad formed over the at least one hole and at the bottom of the trench.

    MEMS DUAL SUBSTRATE SWITCH WITH MAGNETIC ACTUATION
    56.
    发明申请
    MEMS DUAL SUBSTRATE SWITCH WITH MAGNETIC ACTUATION 审中-公开

    公开(公告)号：US20190066937A1

    公开(公告)日：2019-02-28

    申请号：US16104145

    申请日：2018-08-17

    Applicant: Innovative Micro Technology

    Inventor： Christopher S. GUDEMAN ,  Marin SIGURDSON

    IPC: H01H1/00 ,  H01H11/00

    Abstract: Systems and methods for forming a magnetostatic MEMS switch include forming a movable beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A shunt bar on the movable plate may close the switch when lowered onto the contacts. The switch may generally be closed, with the shunt bar resting on the contacts. However, a magnetically permeable material may also be inlaid into the movable plate. The switch may then be opened by placing either a permanent magnet or an electromagnet in proximity to the switch.

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