Abstract:
A spheric magnesium compound comprises a reaction product of at least the following components: (a) a magnesium halide having a formula of MgX2-nRn, wherein X is independently chloride or bromide, R is a C1-C14 alkyl, a C6-C14 aryl, a C1-C14 alkoxy, or a C6-C14 aryloxy, and n is 0 or 1; (b) an alcohol compound; and (c) an epoxy compound having a general formula (I), wherein R2 and R3 are independently hydrogen, a C1-C5 linear or branched alkyl, or a C1-C5 linear or branched haloalkyl. The magnesium compound has characteristic DSC curve and X-ray diffraction pattern, and can be used as a carrier for olefin polymerization catalyst. stereoregularity of polymer having high melt index, and low content of polymer fines.
Abstract:
A magnesium halide adduct is provided, comprising at least one compound of the formula MgXY, at least one compound of the formula ROH, methanol, at least one modifying agent chosen from DOE and o-hydroxy benzoates, and optionally water. Also provided herein are a catalyst component comprising the magnesium halide adduct, a catalyst for olefin polymerization comprising the catalyst component; the respective processes for preparing the magnesium halide adduct and the catalyst component; use of the magnesium halide adduct for preparing the catalyst component, use of the catalyst component in a catalyst for olefin polymerization and use of the catalyst in olefin polymerization; and a process of olefin polymerization.
Abstract:
Low viscosity functional fluids are described which comprises methoxy polyethylene glycol. The fluids are particularly well-suited for use as DOT 4 brake fluids and provide high ERBP, WERBP, low kinematic viscosity and low SBR volume % increase.
Abstract:
(EN): Low viscosity functional fluids are described which comprises methoxy polyethylene glycol. The fluids are particularly well-suited for use as DOT 4 brake fluids and provide high ERBP, WERBP, low kinematic viscosity and low SBR volume % increase.
Abstract:
Ghrelin O-acyltransferase (GOAT) is inhibited with designed small molecules. Methods comprise contacting the GOAT with an inhibitor and detecting a resultant inhibition.
Abstract:
Ghrelin O-acyltransferase (GOAT) is inhibited with designed small molecules. Methods comprise contacting the GOAT with an inhibitor and detecting a resultant inhibition.
Abstract:
The present invention provides a method and system for processing emails. The method comprising: receiving a correction request including an identifier of an original email and an incorrect recipient; in response to the correction request, creating a correction record including the identifier of the original email and the incorrect recipient; in response to receiving relevant emails of the original email, determining whether recipients of the relevant emails include the incorrect recipient; and in response to determining that recipients of the relevant emails include the incorrect recipient, processing the relevant emails based on the correction record.
Abstract:
A service integration platform system includes an interface configured to receive a service request initiated by an Independent Software Vendor (ISV) and one or more processors configured to authenticate the service request and in the event that the service request is authenticated, route the service request to an Internet Service Provider (ISP) providing the service to be further processed. The service request is routed to a deployment environment provided by the ISP in the event that the service request is received on a deployment Universal Resource Identifier (URI) corresponding to the deployment environment; the service request is routed to a test environment provided by the ISP in the event that the service request is received on a test URI corresponding to the test environment.
Abstract:
The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include forming one or more layers of material within an opening in a substrate, the opening and the one or more layers forming at least a portion of an isolation structure, and subjecting at least one of the one or more layers to an energy beam treatment, the energy beam treatment configured to change a stress of the one or more layers subjected thereto, and thus change a stress in the substrate.
Abstract:
A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.