公开(公告)号：US20080308846A1

公开(公告)日：2008-12-18

申请号：US12125506

申请日：2008-05-22

Applicant: Jeo Young SHIM ,  Kyu Tae YOO ,  Won Seok CHUNG ,  Jung Im HAN

Inventor： Jeo Young SHIM ,  Kyu Tae YOO ,  Won Seok CHUNG ,  Jung Im HAN

IPC: G01N27/414 ,  H01L21/00

CPC classification number: G01N27/4145

Abstract: A device for detecting biomolecules includes: a semiconductor substrate; a source region and a drain region separately provided at the substrate; a chamber formed at the substrate including a region between the source region and the drain region, the chamber configured to contain a sample including the biomolecules; and an electrode which applies a voltage to the sample in the chamber. The biomolecules are mobile with respect to the electrode and sample. Methods for detecting biomolecules are also disclosed.

Abstract translation: 用于检测生物分子的装置包括：半导体衬底; 分别设置在所述基板上的源极区域和漏极区域; 在所述基板上形成的室，所述室包括所述源极区域和所述漏极区域之间的区域，所述室被配置为容纳包含所述生物分子的样品; 以及向室中的样品施加电压的电极。 生物分子相对于电极和样品是可移动的。 还公开了检测生物分子的方法。

公开(公告)号：US20070252176A1

公开(公告)日：2007-11-01

申请号：US11613258

申请日：2006-12-20

Applicant: Jeo-young SHIM ,  Kyu-sang LEE ,  Kyu-tae YOO ,  Won-seok CHUNG

Inventor： Jeo-young SHIM ,  Kyu-sang LEE ,  Kyu-tae YOO ,  Won-seok CHUNG

IPC: H01L29/76

CPC classification number: G01N27/4145

Abstract: A field effect transistor for detecting ionic material and a method of detecting ionic material using the field effect transistor. The field effect transistor for detecting ionic material includes a substrate formed of a semiconductor material, a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate, a channel region interposed between the source region and the drain region, an insulating layer disposed on the channel region and formed of an electrically insulating material, a first reference electrode disposed at an edge of the upper portion of the insulating layer and a second reference electrode disposed to be spaced apart from the insulating layer.

Abstract translation: 用于检测离子材料的场效应晶体管和使用场效应晶体管检测离子材料的方法。 用于检测离子材料的场效应晶体管包括由衬底形成的衬底，源极区和漏极区，在衬底中彼此间隔开并且掺杂有与衬底相反的导电类型，沟道区介于 源极区域和漏极区域，设置在沟道区域上并由电绝缘材料形成的绝缘层，设置在绝缘层的上部的边缘处的第一参考电极和设置成间隔开的第二参考电极 从绝缘层。

公开(公告)号：US20070251301A1

公开(公告)日：2007-11-01

申请号：US11619650

申请日：2007-01-04

Applicant: Kyu-sang LEE ,  Kyu-tae YOO ,  Jeo-young SHIM ,  Won-seok CHUNG ,  Yeon-ja CHO

Inventor： Kyu-sang LEE ,  Kyu-tae YOO ,  Jeo-young SHIM ,  Won-seok CHUNG ,  Yeon-ja CHO

IPC: G01N11/00

CPC classification number: G01N27/4145 ,  G01N27/27

Abstract: A method for simultaneously detecting a size and concentration of ionic materials includes measuring voltage drop values of at least three ionic materials of which sizes and concentrations are known using each of at least two FET-based sensors having different electrical characteristics, determining at least three points in a three-dimensional plot from the known sizes, concentrations and the measured voltage drop values, approximating the at least three points into a single plane, measuring a voltage drop value of an ionic material of which size and concentration are unknown using the at least two FET-based sensors, determining equipotential lines existing on the plane using the voltage drop value of the unknown ionic material and determining a cross point between each of the equipotential lines.

Abstract translation: 用于同时检测离子材料的尺寸和浓度的方法包括测量至少三种离子材料的电压降值，其中尺寸和浓度已知使用具有不同电特性的至少两个基于FET的传感器中的每一个，确定至少三个点 在已知尺寸，浓度和测量的电压降值的三维图中，将至少三个点近似为单个平面，测量其尺寸和浓度未知的离子材料的电压降值，至少使用至少 两个基于FET的传感器，使用未知离子材料的电压降值确定在平面上存在的等电位线，并确定每个等电位线之间的交叉点。

公开(公告)号：US20070159216A1

公开(公告)日：2007-07-12

申请号：US11621191

申请日：2007-01-09

Applicant: Kyu-sang LEE ,  Kyu-tae YOO ,  Jeo-young SHIM ,  Jin-tae KIM ,  Yeon-ja CHO

Inventor： Kyu-sang LEE ,  Kyu-tae YOO ,  Jeo-young SHIM ,  Jin-tae KIM ,  Yeon-ja CHO

IPC: H03F3/45

CPC classification number: G01N33/54373 ,  C12Q1/6825 ,  G01N27/4145

Abstract: Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.

Abstract translation: 提供了一种用于检测离子材料的基于FET的传感器，包括基于FET的传感器的离子材料检测装置以及使用基于FET的传感器检测离子材料的方法。 基于FET的传感器包括：感测室，包括参考电极和多个感测FET; 以及包括参考电极和多个参考FET的参考室。 该方法包括：使第一溶液流入和流出基于FET的传感器的感测室和参考室; 使预期含有离子材料的第二溶液流入和流出感测室，同时使第一溶液持续流入和移出参考室; 测量每个感测和参考FET的源极和漏极之间的沟道区域中的电流; 并校正感测FET的电流。

公开(公告)号：US20060177874A1

公开(公告)日：2006-08-10

申请号：US11347185

申请日：2006-02-03

Applicant: Kyu-tae Yoo ,  Joon-ho Kim ,  Jun-hong Min ,  Sung-ouk Jung ,  Ji-na Namgoong ,  Kui-hyun Kim ,  Jeo-young Shim

Inventor： Kyu-tae Yoo ,  Joon-ho Kim ,  Jun-hong Min ,  Sung-ouk Jung ,  Ji-na Namgoong ,  Kui-hyun Kim ,  Jeo-young Shim

IPC: G01N33/53 ,  C12M1/34

CPC classification number: G01N33/54373

Abstract: Provided are a sensing switch and a sensing method using the same. The sensing switch includes: a substrate; a supporter on the substrate; a sensing plate that is connected to a side of the supporter and is in parallel with the substrate by a predetermined distance; a receptor binding region on an upper surface of an end portion of the sensing plate; an electric or magnetic field generation device that induces deflection of the sensing plate when a receptor bound to the receptor binding region is selectively bound to an electrically or magnetically active ligand; and a pair of switching electrodes that are separated by a predetermined distance and is connected when the sensing plate contacts the substrate due to the deflection of the sensing plate. A target material need not be labelled, a signal processing of a fluorescent or electrical detection signal using an analysis apparatus is not required, and a signal can be directly decoded by confirming whether a current flows through the switch.