公开(公告)号：US06810047B2

公开(公告)日：2004-10-26

申请号：US10185100

申请日：2002-06-27

Applicant: Kwang Ryong Oh ,  Myung Lae Lee ,  Hyun Soo Kim ,  Jung Ho Song ,  Kang Ho Kim

Inventor： Kwang Ryong Oh ,  Myung Lae Lee ,  Hyun Soo Kim ,  Jung Ho Song ,  Kang Ho Kim

IPC: H01S310

CPC classification number: H01S5/141 ,  H01S3/0815 ,  H01S3/1055 ,  H01S3/107 ,  H01S5/143

Abstract: The present invention relates to an optical deflector driven by an electrical signal, and a wavelength tunable external resonator using the same. The optical deflector of a triangle shape, capable of controlling the refractive index of a beam depending on the electrical signal, is positioned between a reflection mirror and a diffraction grating in a Littman-Metcalf mode external resonator or between a lens and the diffraction grating in a Littrow mode external resonator. Thus, even with the reflection mirror and the diffracting grating fixed, the refractive index of the beam generated from a laser diode can be controlled by adjusting the electrical signal applied to the optical deflector, so that beam having a specific wavelength can be focused and the wavelength can be rapidly and consecutively tuned.

Abstract translation: 本发明涉及一种由电信号驱动的光偏转器以及使用该光偏转器的波长可调外部谐振器。 能够根据电信号控制光束的折射率的三角形光偏转器位于Littman-Metcalf模式外部谐振器中的反射镜和衍射光栅之间，或者位于透镜与衍射光栅之间 Littrow模式外部谐振器。 因此，即使反射镜和衍射光栅固定，也可以通过调整施加到光偏转器的电信号来控制从激光二极管产生的光束的折射率，使得可以聚焦具有特定波长的光束，并且 波长可以快速和连续调整。

公开(公告)号：US06806205B2

公开(公告)日：2004-10-19

申请号：US09753065

申请日：2000-12-29

Applicant: Won-Ick Jang ,  Chang-Auck Choi ,  Chi-Hoon Jun ,  Youn-Tae Kim ,  Myung-Lae Lee

Inventor： Won-Ick Jang ,  Chang-Auck Choi ,  Chi-Hoon Jun ,  Youn-Tae Kim ,  Myung-Lae Lee

IPC: H01L21302

CPC classification number: B81C1/00936 ,  H01L21/31111 ,  H01L21/31116

Abstract: Disclosed is a a method of fabricating a MEMS device by means of surface micromachining without leaving any stiction or residues by etching silicon oxide of a sacrificial layer, which is an intermediate layer between a substrate and a microstructure, rather than by etching silicon oxide of a semiconductor device. The method according to the invention includes the steps of supplying alcohol vapor bubbled with anhydrous HF, maintaining a temperature of the supplying device and a moving path of the anhydrous HF and the alcohol to be higher than a boiling point of the alcohol, performing a vapor etching by controlling a temperature and a pressure to be within the vapor region of a phase equilibrium diagram of water, and removing silicon oxide of a sacrificial layer on a lower portion of the microstructure.

Abstract translation: 公开了一种通过表面微机械加工制造MEMS器件的方法，而不通过蚀刻作为衬底和微结构之间的中间层的牺牲层的氧化硅而不留下任何残留物，而不是通过蚀刻半导体的氧化硅 设备。 根据本发明的方法包括以下步骤：提供用无水HF鼓泡的醇蒸汽，保持供料装置的温度和无水HF和醇的移动路径高于醇的沸点，进行蒸汽 通过控制温度和压力在水的相平衡图的蒸汽区域内进行蚀刻，并且在微结构的下部去除牺牲层的氧化硅。