公开(公告)号：US20120127142A1

公开(公告)日：2012-05-24

申请号：US13212943

申请日：2011-08-18

Applicant: Jeong-Geun Yoo ,  Seung-Jun Lee ,  Sung-Min Kim

Inventor： Jeong-Geun Yoo ,  Seung-Jun Lee ,  Sung-Min Kim

IPC: G09G3/36 ,  G06F3/038

CPC classification number: G09G3/3614 ,  G09G3/3655 ,  G09G2300/0426 ,  G09G2300/0876 ,  G09G2330/021

Abstract: A liquid crystal display (LCD) ensuring excellent display quality and reducing power consumption is disclosed. The liquid crystal display (LCD) includes first and second polarity image display pixels, such that a polarity inversion of data is executed by line, column, and dot, and the polarity inversion of a common voltage is executed by frame. An inversion driving method using the liquid crystal display (LCD) is also disclosed.

Abstract translation: 公开了一种确保优异的显示质量和降低功耗的液晶显示器（LCD）。 液晶显示器（LCD）包括第一和第二极性图像显示像素，使得通过线，列和点执行数据的极性反转，并且通过帧执行公共电压的极性反转。 还公开了使用液晶显示器（LCD）的反转驱动方法。

公开(公告)号：US08144504B2

公开(公告)日：2012-03-27

申请号：US12458411

申请日：2009-07-10

Applicant: Kwang-seok Kim ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Hyung-soon Shin ,  Seung-yeon Lee ,  Seung-jun Lee

Inventor： Kwang-seok Kim ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Hyung-soon Shin ,  Seung-yeon Lee ,  Seung-jun Lee

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C11/1659 ,  G11C11/1675

Abstract: Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.

Abstract translation: 提供了一种操作包括开关结构和磁阻结构的磁性随机存取存储器件的方法。 根据该方法，当向磁阻结构写入数据时，通过控制开关结构的栅极电压可以减小依赖于电流方向的电流变化。

公开(公告)号：US07953431B2

公开(公告)日：2011-05-31

申请号：US11534821

申请日：2006-09-25

Applicant: Jee Young Cheon ,  Dong Jun Weon ,  Seon Tae Jo ,  Yeon Woo Park ,  Sang Hyuck Lee ,  Seung Jun Lee ,  Soo Jin Jeon

Inventor： Jee Young Cheon ,  Dong Jun Weon ,  Seon Tae Jo ,  Yeon Woo Park ,  Sang Hyuck Lee ,  Seung Jun Lee ,  Soo Jin Jeon

IPC: H04M1/00 ,  H04B1/38

CPC classification number: H04M1/72552 ,  G06F3/04883 ,  H04M2250/16 ,  H04M2250/22

Abstract: A method is provided for displaying a message in a mobile communication terminal. According to one example, the method includes the steps of receiving a first message, displaying the first message on a first display of the terminal, and displaying a message preparation window on a second display of the terminal simultaneously with the display of the first message. Since the terminal user can prepare a response text message to a received text message while viewing the received text message, the preparation of the response text message can be more conveniently achieved.

Abstract translation: 提供了一种用于在移动通信终端中显示消息的方法。 根据一个示例，该方法包括以下步骤：接收第一消息，在终端的第一显示器上显示第一消息，并在终端的第二显示器上同时显示第一消息，显示消息准备窗口。 由于终端用户可以在查看接收的文本消息的同时准备对所接收的文本消息的响应文本消息，所以可以更方便地实现响应文本消息的准备。

公开(公告)号：US07838910B2

公开(公告)日：2010-11-23

申请号：US11616402

申请日：2006-12-27

Applicant: Seung-Jun Lee

Inventor： Seung-Jun Lee

IPC: H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L27/11524

Abstract: Memory devices include a semiconductor substrate and a plurality of wordlines on the semiconductor substrate. A ground select line is on the semiconductor substrate on a first side of the wordlines and a string select line is on the semiconductor substrate on a second side of the wordlines. The wordlines extend between the ground select line and the string select line. First spacers are disposed between the wordlines, between the ground select line and an adjacent one of the wordlines and between the string select line and an adjacent one of the wordlines. Second spacers are disposed on sidewalls of the ground select line and the string select line displaced from the first spacers. The second spacers are a different material than the first spacers. The memory devices may be nonvolatile memory devices. Methods are also provided for forming the memory devices.

Abstract translation: 存储器件包括半导体衬底和半导体衬底上的多个字线。 地线选择线位于字线第一侧上的半导体衬底上，并且字符串选择线位于字线第二侧上的半导体衬底上。 字线在地线选择线和字符串选择行之间延伸。 第一间隔件设置在字线之间，地线选择线与字线之间的相邻字符之间以及字符串选择线和字线之间的相邻字线之间。 第二间隔件设置在接地选择线的侧壁和从第一间隔件移位的串选择线。 第二间隔物是与第一间隔物不同的材料。 存储器件可以是非易失性存储器件。 还提供了用于形成存储器件的方法。

公开(公告)号：US20100278674A1

公开(公告)日：2010-11-04

申请号：US12741908

申请日：2008-03-31

Applicant: Sang-Myung Byun ,  Seung-Jun Lee ,  Yun-hi Lee ,  Yoon-Sung Choi

Inventor： Sang-Myung Byun ,  Seung-Jun Lee ,  Yun-hi Lee ,  Yoon-Sung Choi

IPC: F04C18/356 ,  F04C23/00

CPC classification number: F04C18/3564 ,  F04C23/001 ,  F04C23/008 ,  F04C29/065 ,  F04C29/068 ,  F04C2250/102

Abstract: The present invention provides a 2 stage rotary compressor (100) including a hermetic container (101), a 2 stage compression assembly provided in the hermetic container, wherein a low pressure compression assembly (120), a middle plate (130) and a high pressure compression assembly (140) are successively stacked from any one of upper and lower portions, a first discharge port (124) for discharging middle pressure refrigerant compressed in the low pressure compression assembly (120) a second discharge port (162p) for discharging high pressure refrigerant compressed in the high pressure compression assembly (130) and a third discharge port (172p) positioned at any one of the upper and lower portions of the 2 stage compression assembly to discharge high pressure refrigerant compressed in the 2 stage compression assembly to the hermetic container (101), wherein an area of the third discharge port (172p) is larger than 0.5 times of an area of the first discharge port and smaller than 1.0 times thereof. As a volume flow of refrigerant compressed in the low pressure compression assembly (120) determines a volume flow of refrigerant compressed in the entire 2 stage compression assembly, a size of the third discharge port discharging refrigerant compressed in the 2 stage compression assembly is preferably optimized at a ratio with respect to a size of the first discharge port (127). Therefore, the size of the third discharge port (172p) can be optimized to suppress noise of the compressor.

Abstract translation: 本发明提供一种二级旋转压缩机（100），其包括密封容器（101），设置在密封容器中的二级压缩组件，其中低压压缩组件（120），中间板（130）和高 高压压缩组件（140）从上部和下部中的任一个连续堆叠，用于排出在低压压缩组件（120）中压缩的中压制冷剂的第一排出口（124），用于排出高压的第二排出口（162p） 在高压压缩组件130中被压缩的压力制冷剂和位于二级压缩组件的上部和下部中的任何一个的第三排出口（172p），以将在2级压缩组件中压缩的高压制冷剂排放到 密封容器（101），其中第三排出口（172p）的面积大于第一排出口的面积的0.5倍，小于1.0TI 其中。 由于在低压压缩组件（120）中压缩的制冷剂的体积流量决定了在整个2级压缩组件中压缩的制冷剂的体积流量，所以优选排出在2级压缩组件中压缩的制冷剂的第三排出口的尺寸 相对于第一排出口（127）的尺寸的比例。 因此，可以优化第三排出口（172p）的尺寸，以抑制压缩机的噪音。

公开(公告)号：US20100173485A1

公开(公告)日：2010-07-08

申请号：US12458675

申请日：2009-07-20

Applicant: Seung-jun Lee ,  Woon-kyung Lee ,  Seung-wan Hong

Inventor： Seung-jun Lee ,  Woon-kyung Lee ,  Seung-wan Hong

IPC: H01L21/28 ,  H01L21/3205

CPC classification number: H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/11568

Abstract: A method of manufacturing a non-volatile memory device providing a semiconductor layer in which a cell region and a peripheral region are defined, sequentially forming a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer on the cell region and the peripheral region, forming a trench for exposing a portion of the first conductive layer of the peripheral region, wherein the trench is formed by removing portions of the second conductive layer and the second insulating layer in the peripheral region, performing a trimming operation for removing portions of the second conductive layer and the second insulating layer of the cell region, forming a spacer on a side surface of the trench, and forming a silicide layer that is electrically connected to the first conductive layer, wherein the silicide layer is formed by performing a silicidation process on the spacer.

Abstract translation: 一种制造提供其中限定了单元区域和外围区域的半导体层的非易失性存储器件的方法，其顺序地形成在第一绝缘层，第一导电层，第二绝缘层和第二导电层上 形成用于暴露周边区域的第一导电层的一部分的沟槽，其中通过去除周边区域中的第二导电层和第二绝缘层的部分形成沟槽，进行修整 用于去除所述单元区域的所述第二导电层和所述第二绝缘层的部分的工作，在所述沟槽的侧表面上形成间隔物，以及形成电连接到所述第一导电层的硅化物层，其中所述硅化物层为 通过在间隔物上进行硅化处理而形成。

公开(公告)号：US20100090286A1

公开(公告)日：2010-04-15

申请号：US12588270

申请日：2009-10-09

Applicant: Seung-Jun Lee ,  Woonkyung Lee

Inventor： Seung-Jun Lee ,  Woonkyung Lee

IPC: H01L27/105 ,  H01L21/8239

CPC classification number: H01L27/11551 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11578 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926

Abstract: A vertical-type semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region, a wordline structure on the cell region of the semiconductor substrate, the wordline structure including a plurality of wordlines stacked on top of each other, a semiconductor structure through the wordline structure, a gate dielectric between the wordline structure and the semiconductor structure, and a dummy wordline structure on the peripheral circuit region, the dummy wordline structure having a vertical structure and including same components as the wordline structure.

Abstract translation: 垂直型半导体器件包括具有单元区域和外围电路区域的半导体衬底，半导体衬底的单元区域上的字线结构，该字线结构包括堆叠在彼此顶部的多个字线，半导体结构 通过字线结构，字线结构和半导体结构之间的栅极电介质和外围电路区域上的伪字线结构，虚拟字线结构具有垂直结构并且包括与字线结构相同的部件。

公开(公告)号：US07675125B2

公开(公告)日：2010-03-09

申请号：US11651543

申请日：2007-01-10

Applicant: Hyun-Mog Park ,  Seung-Jun Lee ,  Hyun-Jung Kim

Inventor： Hyun-Mog Park ,  Seung-Jun Lee ,  Hyun-Jung Kim

IPC: H01L27/115

CPC classification number: H01L27/115 ,  H01L27/11526 ,  H01L27/11529

Abstract: In a NAND type nonvolatile memory device, a first insulating layer covers a common drain region formed in a string active region and a peripheral active region. A second insulating layer covers the first insulating layer. A bit line plug penetrates the first and second insulating layers and is connected to the common drain region. A peripheral lower plug penetrates the first insulating layer and is connected to the peripheral active region. A peripheral upper plug penetrates the second insulating layer and is stacked on the peripheral lower plug.

Abstract translation: 在NAND型非易失性存储器件中，第一绝缘层覆盖形成在有源区域和外围有源区域中的公共漏极区域。 第二绝缘层覆盖第一绝缘层。 位线插头穿透第一和第二绝缘层并且连接到公共漏极区域。 外围下插头穿过第一绝缘层并连接到外围有源区。 外周上插头穿透第二绝缘层并堆叠在周边下插头上。

公开(公告)号：US07672154B2

公开(公告)日：2010-03-02

申请号：US12073678

申请日：2008-03-07

Applicant: In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

IPC: G11C11/00

CPC classification number: G11C11/1697 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675

Abstract: Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.

Abstract translation: 提供一种半导体存储器件及其编程方法。 半导体存储器件包括模式输入值生成单元和逻辑运算单元。 模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两种操作模式中的每一种，并且响应于所述至少两种操作模式而连接到当前驱动电路的磁存储单元的逻辑功能 每个操作模式。 逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。

公开(公告)号：US07657216B2

公开(公告)日：2010-02-02

申请号：US11854645

申请日：2007-09-13

Applicant: Seung-jun Lee ,  Hwan-guem Kim ,  Dong-jin Seol ,  Dong-woo Lee ,  Tae-gyu Kim

Inventor： Seung-jun Lee ,  Hwan-guem Kim ,  Dong-jin Seol ,  Dong-woo Lee ,  Tae-gyu Kim

IPC: G03G15/20

CPC classification number: G03G15/2064

Abstract: A fixing unit which enables high-speed operation and miniaturization, and an image forming apparatus having the fixing unit, includes a heating member which is heated by a heat source, the heating member having a predetermined width; a rotating member to rotate in contact with the heating member; a driving member to rotate the rotating member; and a pressing member to press both sides of the heating member towards the driving member and to form a predetermined fixing nip between the rotating member and the driving member, wherein the heating member has a second moment of inertia which is set to maintain a fixing efficiency of 90% or more in a central portion of the heating member.

Abstract translation: 具有能够进行高速运行和小型化的定影单元和具有该定影单元的图像形成装置包括由热源加热的加热构件，加热构件具有预定宽度; 旋转构件，其与加热构件接触旋转; 用于旋转所述旋转构件的驱动构件; 以及按压部件，其将所述加热部件的两侧压向所述驱动部件，并且在所述旋转部件与所述驱动部件之间形成预定的定影夹持部，所述加热部件具有设定为保持固定效率的第二惯性矩 在加热构件的中心部分中为90％以上。