Memory cell structure
    52.
    发明授权
    Memory cell structure 有权
    存储单元结构

    公开(公告)号:US07312506B2

    公开(公告)日:2007-12-25

    申请号:US11093652

    申请日:2005-03-30

    CPC classification number: G11C11/16

    Abstract: A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

    Abstract translation: 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层,位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合,平行于第一导电线的长度,第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻,接收从流经第一导线的电流产生的磁场。

    Low tunneling current MIM structure and method of manufacturing same
    53.
    发明申请
    Low tunneling current MIM structure and method of manufacturing same 有权
    低隧道电流MIM结构及其制造方法

    公开(公告)号:US20070247784A1

    公开(公告)日:2007-10-25

    申请号:US11379478

    申请日:2006-04-20

    Abstract: Disclosed herein are new MIM structures having increased capacitance with little or no tunneling current, and related methods of manufacturing the same. In one embodiment, the new MIM structure comprises a first electrode comprising a magnetic metal and having a magnetic moment aligned in a first direction, and a second electrode comprising a magnetic metal and having a magnetic moment aligned in a second direction antiparallel to the first direction. In addition, such an MIM structure comprises a dielectric layer formed between the first and second electrodes and contacting the first and second magnetic metals.

    Abstract translation: 这里公开了具有增加的电容,很少或没有隧道电流的新的MIM结构,以及相关的制造方法。 在一个实施例中,新的MIM结构包括包括磁性金属并且具有在第一方向上对准的磁矩的第一电极和包括磁性金属的第二电极,并且具有在与第一方向相反的第二方向上对准的磁矩 。 此外,这种MIM结构包括形成在第一和第二电极之间并与第一和第二磁性金属接触的电介质层。

    Telescopic pneumatic device
    54.
    发明申请

    公开(公告)号:US20060075891A1

    公开(公告)日:2006-04-13

    申请号:US10962039

    申请日:2004-10-08

    Applicant: Yu-Jen Wang

    Inventor: Yu-Jen Wang

    CPC classification number: F15B15/202 B29C45/14344 F15B15/1428 F15B2215/305

    Abstract: A telescopic pneumatic device comprises an outer cylinder, an inner cylinder disposed in the outer cylinder and having a cylinder wall defining an air chamber, a piston mounted in the air chamber and having a piston rod connected thereto, a flow passage provided between the cylinder wall and the outer cylinder, and a control valve operable to permit or interrupt fluid communication between the flow passage and the air chamber. The inner cylinder is made of a rigid plastic material and includes a valve mounting part for receiving the control valve, the valve mounting part being formed in one piece with the cylinder wall.

    Door closer
    55.
    发明申请
    Door closer 失效
    闭门器

    公开(公告)号:US20050177975A1

    公开(公告)日:2005-08-18

    申请号:US10779488

    申请日:2004-02-13

    Applicant: Yu-Jen Wang

    Inventor: Yu-Jen Wang

    Abstract: A door closer includes a closer casing, a pivot unit, and a length-variable damping cylinder. The pivot unit includes a pivot axle, a cam member, and a cam follower member. The pivot axle has a drive end portion that extends into and that is retained rotatably in the closer casing, and a coupling end portion that extends out of the closer casing. The cam member is mounted co-rotatably on the drive end portion of the pivot axle. The cam follower member is disposed in the closer casing, and is acted upon by the cam member. The damping cylinder is disposed in the closer casing, and has one end coupled to the cam follower member and an opposite end anchored to the closer casing.

    Abstract translation: 门关闭器包括更靠近的外壳,枢轴单元和长度可变的阻尼缸。 枢轴单元包括枢转轴,凸轮构件和凸轮从动构件。 枢轴具有一个驱动端部分,该驱动端部分延伸到可更靠近的壳体中并且可旋转地保持在其中,并且该连接端部从较近的壳体延伸出来。 凸轮构件可共旋转地安装在枢转轴的驱动端部上。 凸轮从动构件设置在更靠近的壳体中,并被凸轮构件作用。 阻尼筒设置在更靠近的壳体中,并且一端联接到凸轮从动构件,并且相对端锚固到更靠近的壳体。

    System for adjusting radiation target sites dynamically according to moving states of target object and for creating lookup table of the moving states

    公开(公告)号:US11504551B2

    公开(公告)日:2022-11-22

    申请号:US15931549

    申请日:2020-05-13

    Abstract: A system for adjusting radiation target sites dynamically according to the moving states of a target object and for creating a lookup table of the moving states includes a detection chip, a radiation generation device, and a lookup table. The detection chip can be fixed on the target object to detect the current moving state of the target object. The detection chip or the radiation generation device, both configured for wireless signal transmission to each other, can activate or deactivate the radiation emitters of the radiation generation device individually according to the current moving state of the target object and the contents of the lookup table. As the system uses wireless transmission, and the lookup table has recorded the working state of each radiation emitter in each moving state of the target object, radiotherapy can be performed without a large number of tubes or sensors.

    Party popper
    57.
    发明授权

    公开(公告)号:US10603601B2

    公开(公告)日:2020-03-31

    申请号:US16424502

    申请日:2019-05-29

    Applicant: Yu-Jen Wang

    Inventor: Yu-Jen Wang

    Abstract: A party popper contains: a body which includes two first openings defined on two ends of the body respectively. A flexible push portion is mounted on an end of the body, and a launchable cylinder is slidably accommodated in the body. The body includes a surrounding rib fitted thereon, and the flexible push portion is configured to drive the launchable cylinder to slide until the launchable cylinder is stopped by the surrounding rib. Multiple launchable objects are launched from the launchable cylinder inertially, thus launching the multiple launchable objects safely.

    Storage element for STT MRAM applications
    59.
    发明授权
    Storage element for STT MRAM applications 有权
    STT MRAM应用的存储元件

    公开(公告)号:US08921961B2

    公开(公告)日:2014-12-30

    申请号:US13617432

    申请日:2012-09-14

    CPC classification number: H01L43/12 G11C11/161 H01L43/08

    Abstract: An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

    Abstract translation: 描述了改进的PMA STT MTJ存储元件及其形成方法。 通过在存储层和盖层之间插入合适的氧化物层,获得改进的PMA性质,增加更大的Eb / kT热因子的可能性以及较大的MR。 另一个重要的优点是更好的与高处理温度的兼容性,有可能促进与CMOS的集成。

    Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
    60.
    发明申请
    Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM 有权
    STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁(SAF)结构

    公开(公告)号:US20140070341A1

    公开(公告)日:2014-03-13

    申请号:US13609780

    申请日:2012-09-11

    Abstract: A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.

    Abstract translation: 公开了一种用于自旋电子器件的合成反铁磁(SAF)结构,并具有AP2 /反铁磁(AF)耦合/ CoFeB配置。 SAF结构变薄以减少边缘(Ho)场,同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性(PMA),并通过AF耦合在薄CoFeB层中诱导PMA。 在一个实施例中,通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 当AP2为(Co / Ni)4,CoFeB厚度为7.5埃时,Ho降至125Oe,Hc为1000Oe,平衡饱和磁化强度产物(Mst)= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB,其中FL2是具有固有PMA的铁磁层。

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