公开(公告)号：US07220993B2

公开(公告)日：2007-05-22

申请号：US10990514

申请日：2004-11-18

Applicant: Hoon Kim ,  Jin-Wook Seo ,  Ki-Yong Lee

Inventor： Hoon Kim ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC: H01L29/76

CPC classification number: H01L29/66757 ,  H01L27/1277 ,  H01L29/78675

Abstract: A thin film transistor and method for fabricating the same are provided. The thin film transistor comprises a semiconductor layer having a MILC region that has first crystalline grains crystallized by MILC method and second crystalline grains disposed between the first crystalline grains and having different crystalline properties from the first crystalline grains.

Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管包括具有通过MILC方法结晶的第一晶粒的MILC区域和设置在第一晶粒之间并且具有与第一晶粒具有不同晶体性质的第二晶粒的半导体层。

公开(公告)号：US20070089620A1

公开(公告)日：2007-04-26

申请号：US11580552

申请日：2006-10-12

Applicant: Hoon Kim ,  Jung-mi Choi

Inventor： Hoon Kim ,  Jung-mi Choi

IPC: B05C17/04

CPC classification number: B41F15/36 ,  B41F15/42 ,  B41P2215/14 ,  B41P2215/50 ,  G02F1/1303 ,  H01L51/524 ,  H01L51/5253

Abstract: A printing apparatus that can form an even thin film on a substrate, a method of controlling the printing apparatus, and a method of manufacturing a flat panel display are presented. The printing apparatus includes a table on which a substrate is mounted, a mask located on the table and having a mesh part framed by a supporter, a squeegee capable of moving across the mask to form a thin film on the substrate, a squeegee driver for driving the squeegee, and a controller for controlling the squeegee driver to stop the squeegee at a boundary area between the mesh part and the supporter for a predetermined time period.

Abstract translation: 本发明提供了能够在基板上形成均匀的薄膜的打印装置，控制打印装置的方法以及制造平板显示器的方法。 印刷装置包括：安装有基板的工作台，位于工作台上的掩模，具有由支撑件构成的网眼部，能够移动穿过掩模的刮板，以在基板上形成薄膜;刮板驱动器， 驱动刮板，以及控制器，用于控制刮刀驱动器在预定时间段内在网状部分和支撑件之间的边界区域处停止刮板。

公开(公告)号：US07192873B1

公开(公告)日：2007-03-20

申请号：US11240473

申请日：2005-10-03

Applicant: Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-Iyong Choi

Inventor： Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-Iyong Choi

IPC: H01L21/311

CPC classification number: H01L21/8238 ,  H01L21/3212 ,  H01L33/08 ,  H01L33/24 ,  Y10S977/755 ,  Y10S977/758 ,  Y10S977/773

Abstract: Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.

Abstract translation: 提供了一种使用纳米级P-N结器件或使用纳米颗粒的CMOS而不使用掩模或精细图案的纳米级半导体器件的制造方法。 该方法包括在半导体衬底上均匀分散多个纳米颗粒，形成覆盖半导体衬底上的纳米颗粒的绝缘层，部分去除纳米颗粒和绝缘层的上表面，从绝缘体中选择性地除去纳米颗粒 层，并且通过部分地通过去除纳米颗粒形成的空间将半导体衬底部分地掺杂在半导体衬底中部分地形成掺杂半导体层。

公开(公告)号：US20070047668A1

公开(公告)日：2007-03-01

申请号：US11514438

申请日：2006-09-01

Applicant: Sung-Kee Kim ,  Hoon Kim ,  Seong-Taek Hwang

Inventor： Sung-Kee Kim ,  Hoon Kim ,  Seong-Taek Hwang

IPC: H04L27/04

CPC classification number: H04B1/68 ,  H04L27/04

Abstract: A single side band (SSB) modulator module using a carrier frequency includes: first and second Mach-Zender interferometers for modulating the carrier frequency and first and second signals into an SSB signal; and an arm, which is connected to both ends at which the first and second Mach-Zender interferometers are connected, splits the carrier frequency, and outputs a split portion to the first and second Mach-Zender interferometers.

Abstract translation: 使用载波频率的单边带（SSB）调制器模块包括：第一和第二马赫 - 泽德干涉仪，用于将载波频率和第一和第二信号调制成SSB信号; 并且连接到第一和第二马赫 - 泽德干涉仪连接的两端的臂分离载波频率，并将分割部分输出到第一和第二马赫 - 泽德干涉仪。

公开(公告)号：US20060192487A1

公开(公告)日：2006-08-31

申请号：US11150617

申请日：2005-06-10

Applicant: Beohm-Rock Choi ,  Hoon Kim ,  Un-Cheol Sung

Inventor： Beohm-Rock Choi ,  Hoon Kim ,  Un-Cheol Sung

IPC: H05B33/04 ,  H05B33/10

CPC classification number: H01L51/5284 ,  H01L27/3295 ,  H01L51/5246 ,  H01L51/5256 ,  H01L51/5259

Abstract: A display device includes a first substrate, light emitting elements formed over the first substrate, a second substrate facing the first substrate, and a sealing member between the first and the second substrate to combine them. The sealing member is patterned to expose the light emitting elements. The sealing member may include black colored material to improve contrast, and dehydrating material may be part of the device to absorb moisture and/or oxygen. Accordingly, the transmittance of light generated from the light emitting elements increases and the luminance of display device improves.

Abstract translation: 显示装置包括第一基板，形成在第一基板上的发光元件，面向第一基板的第二基板，以及在第一和第二基板之间的密封部件，以组合它们。 将密封构件图案化以暴露发光元件。 密封构件可以包括黑色材料以改善对比度，并且脱水材料可以是吸收水分和/或氧气的装置的一部分。 因此，从发光元件产生的光的透射率增加，并且显示装置的亮度提高。

公开(公告)号：US20060188822A1

公开(公告)日：2006-08-24

申请号：US11358074

申请日：2006-02-22

Applicant: Seung-Hyuk Chang ,  I-Hun Song ,  Won-Joo Kim ,  Suk-Pil Kim ,  Hoon Kim

Inventor： Seung-Hyuk Chang ,  I-Hun Song ,  Won-Joo Kim ,  Suk-Pil Kim ,  Hoon Kim

IPC: G03C5/00

CPC classification number: G03F7/70233

Abstract: Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢   ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢   ⁢ i 2 .

公开(公告)号：US20060145814A1

公开(公告)日：2006-07-06

申请号：US11137490

申请日：2005-05-26

Applicant: Chang Son ,  Hoon Kim ,  Woon Jung ,  You Park ,  Hye Lee

Inventor： Chang Son ,  Hoon Kim ,  Woon Jung ,  You Park ,  Hye Lee

IPC: H04Q5/22

CPC classification number: G06K7/10079 ,  F25D29/005 ,  F25D2700/08 ,  G06K7/10316 ,  G06K7/10336 ,  G06K2017/0051

Abstract: A refrigerator and a method of controlling the same. The refrigerator includes: tags attached to goods stored in a storage chamber; a reader, including a plurality of antennas having different identification distances, identifying the tags using the antennas; and a control unit detecting locations of the tags attached to goods stored in the storage chamber using the different identification distances of the antennas.

Abstract translation: 一种冰箱及其控制方法。 冰箱包括：附着在储存室中的货物的标签; 读取器，包括具有不同识别距离的多个天线，使用天线识别标签; 以及控制单元，使用天线的不同识别距离来检测附接到存储在存储室中的商品的标签的位置。

公开(公告)号：US20060145196A1

公开(公告)日：2006-07-06

申请号：US11024783

申请日：2004-12-30

Applicant: Hoon Kim

Inventor： Hoon Kim

IPC: H01L21/00 ,  H01L29/768 ,  H01L27/148 ,  H01L31/113 ,  H01L21/8228 ,  H01L21/425

CPC classification number: H01L27/14689 ,  H01L27/12 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

Abstract: A method of fabricating a high-sensitivity image sensor is disclosed. The disclosed method comprises: etching a predetermined region of active silicon and a buried oxide layer by using a mask over an SOI substrate to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to form a P-type region; forming crossed active silicon by patterning the rest of the active silicon not etched while the active silicon is etched to expose the N-type silicon substrate; implanting P-type ions into first two predetermined regions facing each other of the crossed active silicon to form P-type regions; implanting N-type ions into second two predetermined regions facing each other except for the P-type regions of the crossed active silicon to form N-type regions; forming a gate oxide layer and a gate electrode on the crossed active silicon; and forming a connection part to connect the P-type region of the crossed active silicon to the P-type region of the silicon substrate.

Abstract translation: 公开了一种制造高灵敏度图像传感器的方法。 所公开的方法包括：通过在SOI衬底上使用掩模来蚀刻活性硅和掩埋氧化物层的预定区域以暴露N型硅衬底; 将P型离子注入暴露的N型硅衬底中以形成P型区域; 在蚀刻活性硅以暴露N型硅衬底时，通过图案化未蚀刻的其余有源硅来形成交叉活性硅; 将P型离子注入到交叉的活性硅相互面对的前两个预定区域中以形成P型区域; 将N型离子注入除了交叉活性硅的P型区域之外的彼此相对的第二两个预定区域中以形成N型区域; 在交叉的活性硅上形成栅氧化层和栅电极; 以及形成连接部分以将交叉活性硅的P型区域连接到硅衬底的P型区域。

公开(公告)号：US07061031B1

公开(公告)日：2006-06-13

申请号：US11024783

申请日：2004-12-30

Applicant: Hoon Kim

Inventor： Hoon Kim

IPC: H01L27/148 ,  H01L21/00

CPC classification number: H01L27/14689 ,  H01L27/12 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

Abstract: A method of fabricating a high-sensitivity image sensor is disclosed. The disclosed method comprises: etching a predetermined region of active silicon and a buried oxide layer by using a mask over an SOI substrate to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to form a P-type region; forming crossed active silicon by patterning the rest of the active silicon not etched while the active silicon is etched to expose the N-type silicon substrate; implanting P-type ions into first two predetermined regions facing each other of the crossed active silicon to form P-type regions; implanting N-type ions into second two predetermined regions facing each other except for the P-type regions of the crossed active silicon to form N-type regions; forming a gate oxide layer and a gate electrode on the crossed active silicon; and forming a connection part to connect the P-type region of the crossed active silicon to the P-type region of the silicon substrate.

Abstract translation: 公开了一种制造高灵敏度图像传感器的方法。 所公开的方法包括：通过在SOI衬底上使用掩模来蚀刻活性硅和掩埋氧化物层的预定区域以暴露N型硅衬底; 将P型离子注入暴露的N型硅衬底中以形成P型区域; 在蚀刻活性硅以暴露N型硅衬底时，通过图案化未蚀刻的其余有源硅来形成交叉活性硅; 将P型离子注入到交叉的活性硅相互面对的前两个预定区域中以形成P型区域; 将N型离子注入除了交叉活性硅的P型区域之外的彼此相对的第二两个预定区域中以形成N型区域; 在交叉的活性硅上形成栅氧化层和栅电极; 以及形成连接部分以将交叉活性硅的P型区域连接到硅衬底的P型区域。

公开(公告)号：US20060001096A1

公开(公告)日：2006-01-05

申请号：US10530416

申请日：2003-08-18

Applicant: Hong Choi ,  Hoon Kim

Inventor： Hong Choi ,  Hoon Kim

IPC: H01L27/01

CPC classification number: H01L31/1136

Abstract: The present invention relates to a photodetector using MOSFET with quantum channels and a method for making thereof. A photodetector using MOSFET with quantum channels according to the present invention comprises a quantum channel formed on an activated SOI wafer, a gate oxide film covering said quantum channel; a gate formed so as to control carrier current at said quantum channel; a source and a drain formed at both ends of said channel area; and metal layers connected with said gate, said source and said drain. Thus, the photodetector according to the present invention can obtain more excellent photocurrent characteristics compared with the existing SOI MOSFET device by forming quantum channels on the SOI MOSFET. The MOSFET with quantum channels according to the present invention can be used as a good photodetector maintaining advantages of the existing MOSFET such as ease in integration and high speed.

Abstract translation: 本发明涉及使用具有量子通道的MOSFET的光检测器及其制造方法。 根据本发明的使用具有量子通道的MOSFET的光电检测器包括形成在激活的SOI晶片上的量子通道，覆盖所述量子通道的栅极氧化膜; 形成为在所述量子通道处控制载流子的栅极; 在所述通道区域的两端形成的源极和漏极; 以及与所述栅极，所述源极和所述漏极连接的金属层。 因此，根据本发明的光电检测器可以通过在SOI MOSFET上形成量子通道而与现有的SOI MOSFET器件相比获得更优异的光电流特性。 根据本发明的具有量子通道的MOSFET可以用作保持现有MOSFET的优点的良好光电探测器，例如易于集成和高速度。