公开(公告)号：US20100000990A1

公开(公告)日：2010-01-07

申请号：US12460870

申请日：2009-07-23

Applicant: Chen Feng ,  Kai Liu ,  Ding Wang ,  Kai-Li Jiang ,  Chang-Hong Liu ,  Shou-Shan Fan

Inventor： Chen Feng ,  Kai Liu ,  Ding Wang ,  Kai-Li Jiang ,  Chang-Hong Liu ,  Shou-Shan Fan

IPC: H05B3/03 ,  H05B3/10

CPC classification number: H05B3/145 ,  H05B3/265 ,  H05B3/28 ,  H05B3/34 ,  H05B2203/005 ,  H05B2203/007 ,  H05B2203/011 ,  H05B2203/013 ,  H05B2203/014 ,  H05B2203/017 ,  H05B2203/032 ,  H05B2214/04 ,  Y10T29/49208 ,  Y10T156/10 ,  Y10T156/1002

Abstract: An apparatus includes a hollow heater. The hollow heater has a hollow supporter, a heating element and at least two electrodes. The at least two electrodes are separately and electrically connected to the heating element. The hollow supporter defines a hollow space, the hollow supporter has an inner surface and an outer surface. The heating element disposed on one of the surfaces of the hollow supporter. The heating element includes a carbon nanotube film. The carbon nanotube film is made of a plurality of carbon nanotubes entangled with each other.

Abstract translation: 一种装置包括中空加热器。 中空加热器具有中空的支撑件，加热元件和至少两个电极。 所述至少两个电极分别电连接到所述加热元件。 中空支撑件限定中空空间，中空支撑件具有内表面和外表面。 加热元件设置在中空支撑体的一个表面上。 加热元件包括碳纳米管膜。 碳纳米管膜由多个彼此缠结的碳纳米管制成。

公开(公告)号：US20100000669A1

公开(公告)日：2010-01-07

申请号：US12462153

申请日：2009-07-30

Applicant: Chen Feng ,  Kai Liu ,  Ding Wang ,  Kai-Li Jiang ,  Chang-Hong Liu ,  Shou-Shan Fan

Inventor： Chen Feng ,  Kai Liu ,  Ding Wang ,  Kai-Li Jiang ,  Chang-Hong Liu ,  Shou-Shan Fan

IPC: B29D31/00 ,  H01C17/06

CPC classification number: H01C17/06 ,  H01C17/28 ,  H05B3/145 ,  H05B2203/005 ,  H05B2203/007 ,  H05B2203/011 ,  H05B2203/013 ,  H05B2203/014 ,  H05B2203/017 ,  H05B2203/032 ,  Y10T29/49083

Abstract: A method for making a hollow heater is provided. The method includes providing a hollow supporter and, the hollow supporter defines a hollow space. A carbon nanotube structure is made and then fixed on a surface of the hollow supporter. A first electrode and a second electrode is provided and electrically connected to the carbon nanotube structure.

Abstract translation: 提供一种制造中空加热器的方法。 该方法包括提供中空支撑件，并且中空支撑件限定中空空间。 制作碳纳米管结构，然后固定在中空支撑体的表面上。 提供第一电极和第二电极并电连接到碳纳米管结构。

公开(公告)号：US20090321420A1

公开(公告)日：2009-12-31

申请号：US12460854

申请日：2009-07-23

Applicant: Chen Feng ,  Kai Liu ,  Ding Wang ,  Kai-Li Jiang ,  Chang-Hong Liu ,  Shou-Shan Fan

Inventor： Chen Feng ,  Kai Liu ,  Ding Wang ,  Kai-Li Jiang ,  Chang-Hong Liu ,  Shou-Shan Fan

IPC: H05B3/03 ,  H05B3/10

CPC classification number: H05B3/145 ,  H05B3/265 ,  H05B3/28 ,  H05B3/34 ,  H05B2203/005 ,  H05B2203/007 ,  H05B2203/011 ,  H05B2203/013 ,  H05B2203/014 ,  H05B2203/017 ,  H05B2203/032 ,  H05B2214/04 ,  Y10T29/49208 ,  Y10T156/10 ,  Y10T156/1002

Abstract: An apparatus includes a hollow heater. The hollow heater includes a hollow supporter, a heating element and at least two electrodes. The hollow supporter has an inner surface and an outer surface. The heating element is attached on one of the inner and the outer surfaces of the hollow supporter. The heat element comprises of a carbon nanotube film comprising of carbon nanotubes arranged along a same direction. The at least two electrodes are electrically connected to the heating element.

Abstract translation: 一种装置包括中空加热器。 中空加热器包括中空支撑件，加热元件和至少两个电极。 中空支撑件具有内表面和外表面。 加热元件安装在中空支撑件的内表面和外表面之一上。 加热元件由沿同一方向排列的碳纳米管构成的碳纳米管膜构成。 至少两个电极电连接到加热元件。

公开(公告)号：US07622796B2

公开(公告)日：2009-11-24

申请号：US11906136

申请日：2007-09-28

Applicant: Lei Shi ,  Ming Sun ,  Kai Liu

Inventor： Lei Shi ,  Ming Sun ,  Kai Liu

IPC: H01L23/02

CPC classification number: H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package is disclosed. The package includes a leadframe having drain, source and gate leads, and a semiconductor die coupled to the leadframe, the semiconductor die having a plurality of metalized source contacts. A bridged source plate interconnection has a bridge portion, valley portions disposed on either side of the bridge portion, plane portions disposed on either side of the valley portions and the bridge portion, and a connection portion depending from one of the plane portions, the bridged source plate interconnection connecting the source lead with the plurality of metalized source contacts. The bridge portion is disposed in a plane above the plane of the valley portions while the plane portions are disposed in a plane intermediate the plane of the bridge portion and the plane of the valley portions.

Abstract translation: 公开了半导体封装。 封装包括具有漏极，源极和栅极引线的引线框架以及耦合到引线框架的半导体管芯，该半导体管芯具有多个金属化源极触点。 桥接源极板互连具有桥接部分，设置在桥接部分的任一侧上的谷部分，设置在谷部分和桥接部分两侧的平面部分以及从平面部分之一悬挂的连接部分， 将源极引线与多个金属化源触点连接的源极板互连。 桥面部分设置在平坦部分的平面上方的平面中，而平面部分设置在桥接部分的平面和谷部的平面之间的平面中。

公开(公告)号：US20090272490A1

公开(公告)日：2009-11-05

申请号：US11484396

申请日：2006-07-11

Applicant: Kai Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

Inventor： Kai Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: D01F9/12 ,  B29C65/00

CPC classification number: B82Y40/00 ,  B01J23/74 ,  B01J37/0215 ,  B82Y30/00 ,  C01B32/162 ,  Y10T156/1089

Abstract: A method for manufacturing open-ended carbon nanotubes is described. The method includes steps of: providing a substrate having a catalyst layer formed thereon; placing the substrate in a reaction chamber; introducing a carbon source gas containing carbon element into the reaction chamber for growing carbon nanotubes form the catalyst layer; promptly reducing a concentration of the carbon source gas when the growth of carbon nanotubes in process, thereby ceasing the growth of the carbon nanotubes instantly; and separating the carbon nanotubes from the catalyst layer.

Abstract translation: 描述了制造开放式碳纳米管的方法。 该方法包括以下步骤：提供其上形成有催化剂层的基板; 将基板放置在反应室中; 将碳元素的碳源气体引入用于生长碳纳米管的反应室中形成催化剂层; 在碳纳米管生长过程中迅速降低碳源气体的浓度，从而立即停止碳纳米管的生长; 并从催化剂层分离碳纳米管。

公开(公告)号：US07606184B2

公开(公告)日：2009-10-20

申请号：US11029664

申请日：2005-01-04

Applicant: Kai Liu ,  Richard Kommrusch

Inventor： Kai Liu ,  Richard Kommrusch

IPC: H04L5/00

CPC classification number: H03H7/463 ,  H03H2001/0085

Abstract: A multiplexer, such as a diplexer, is delineated. The multiplexer may be employed in a communications system that may communicate in multiple frequency bands within a predefined range of frequencies, e.g., 2400 MHz-4900 MHz. The communications system may operate in a network, such as a wireless local area network, without significant interference from signals used by a cellular/mobile telephone system. The multiplexer may include multiple channels with bandpass filters that may be formed with lumped inductors and lumped capacitors. In at least one of the channels, the bandpass filter may be formed by combining at least one lowpass filter with at least one highpass filter.

Abstract translation: 已经描述了诸如双工器之类的多路复用器。 多路复用器可以用在可以在预定范围的频率（例如2400MHz-4900MHz）内在多个频带中通信的通信系统中。 通信系统可以在诸如无线局域网的网络中操作，而不会由蜂窝/移动电话系统使用的信号的显着干扰。 多路复用器可以包括具有带通滤波器的多个通道，其可以形成有集总电感器和集总电容器。 在至少一个通道中，可以通过将至少一个低通滤波器与至少一个高通滤波器组合来形成带通滤波器。

公开(公告)号：US20090197082A1

公开(公告)日：2009-08-06

申请号：US12321568

申请日：2009-01-22

Applicant: Kai-Li Jiang ,  Liang Liu ,  Kai Liu ,  Qing-Yu Zhao ,  Yong-Chao Zhai ,  Shou-Shan Fan

Inventor： Kai-Li Jiang ,  Liang Liu ,  Kai Liu ,  Qing-Yu Zhao ,  Yong-Chao Zhai ,  Shou-Shan Fan

IPC: H01B1/04 ,  B32B15/04

CPC classification number: H01B13/0026 ,  H01B1/04 ,  H01B1/24 ,  Y10T428/2918

Abstract: A individually coated carbon nanotube wire-like structure includes an amount of carbon nanotubes and a conductive coating on an outside surface of the carbon nanotubes. The carbon nanotubes are joined end-to-end by van der Waals attractive force therebetween.

Abstract translation: 单独涂覆的碳纳米管线状结构包括一定量的碳纳米管和在碳纳米管的外表面上的导电涂层。 碳纳米管之间以范德华力吸引力端对端连接。

公开(公告)号：US20090108456A1

公开(公告)日：2009-04-30

申请号：US11932845

申请日：2007-10-31

Applicant: Francois Hebert ,  Anup Bhalla ,  Kai Liu ,  Ming Sun

Inventor： Francois Hebert ,  Anup Bhalla ,  Kai Liu ,  Ming Sun

IPC: H01L23/488 ,  H01L21/60

CPC classification number: H01L24/40 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/64 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/05624 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/37099

Abstract: A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes: a) Lithographically patterning the top metal layer into the contact zones and the contact enhancement zones. b) Forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.

Abstract translation: 提出了一种焊顶增强型半导体器件进行封装。 焊料顶部器件包括具有图案化为接触区域和接触增强区域的顶部金属层的器件裸片。 至少一个接触区域电连接到至少一个接触增强区域。 每个接触增强区顶部都是一个焊料层，用于增加复合材料厚度，从而降低寄生阻抗。 在顶部金属材料不能与焊料材料形成均匀的良好电接合的情况下，器件裸片还包括夹在中间层之间并与顶部金属层和焊料层形成均匀的电接合的中间层。 用于制造焊料顶部器件的方法包括：a）将顶部金属层的光刻图案化成接触区域和接触增强区域。 b）使用用于增加复合材料厚度的模版工艺在每个接触增强区的顶部上形成焊料层。

公开(公告)号：US20080303606A1

公开(公告)日：2008-12-11

申请号：US11760207

申请日：2007-06-08

Applicant: Kai Liu ,  Robert Charles Frye

Inventor： Kai Liu ,  Robert Charles Frye

IPC: H03H7/42 ,  H01F7/06

CPC classification number: H03H7/42 ,  H01F17/0013 ,  H03H7/1775 ,  Y10T29/4902 ,  Y10T29/49071

Abstract: A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between secondhand third portions of the third coil.

Abstract translation: 宽带平衡 - 不平衡转换器包括沉积在衬底上并定向在第一线圈中的第一金属化。 第一线圈水平延伸穿过衬底，同时保持基本平坦的垂直轮廓。 第二金属化沉积在衬底上并定向在第二线圈中。 第二线圈磁耦合到第一线圈，并且第二线圈的一部分定向在第一线圈的内部。 第三金属化沉积在衬底上并定向在第三线圈中。 第三线圈磁耦合到第一和第二线圈。 第三线圈的第一部分位于第二线圈的内部。 第三线圈具有在第三线圈的第二手第三部分之间连接到第三线圈的平衡端口。

公开(公告)号：US20080182387A1

公开(公告)日：2008-07-31

申请号：US11701561

申请日：2007-01-31

Applicant: Tao Feng ,  Ming Sun ,  Yueh-Se Ho ,  Kai Liu

Inventor： Tao Feng ,  Ming Sun ,  Yueh-Se Ho ,  Kai Liu

IPC: H01L21/00

CPC classification number: H01L21/67132 ,  H01L21/288 ,  H01L21/6836 ,  H01L24/02 ,  H01L24/11 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014

Abstract: A method of fabricating a semiconductor device employing electroless plating including wafer backside protection during wet processing is disclosed. The method includes the steps of laminating a wafer back side and a frame with a protective tape, applying a protective coating to a peripheral portion of the wafer and an adjoining exposed area of the protective tape, the protective coating, protective tape, and wafer forming a protected wafer assembly, curing the frame-supported protective coating, cutting the protected wafer assembly from the protective tape surrounding the protective coating, wet processing the protected wafer assembly, laminating the protected wafer assembly with a second tape, dicing the wafer, and picking up the die from the protective tape.

Abstract translation: 公开了一种在湿法处理中制造采用化学镀的半导体器件的方法，包括晶片背面保护。 该方法包括以下步骤：将晶片背面和框架与保护带层压，将保护涂层施加到晶片的周边部分以及相邻的保护带的暴露区域，保护涂层，保护带和晶片成形 保护的晶片组件，固化框架支撑的保护涂层，将保护的晶片组件从围绕保护涂层的保护带切割，湿处理受保护的晶片组件，用第二带层压受保护的晶片组件，切割晶片，以及拾取 从保护胶带上取下模具。