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    Wafer structure
    52.
    发明授权
    Wafer structure 有权

    公开(公告)号：US11731423B2

    公开(公告)日：2023-08-22

    申请号：US17405874

    申请日：2021-08-18

    Applicant: Microjet Technology Co., Ltd.

    Inventor： Hao-Jan Mou ,  Ying-Lun Chang ,  Hsien-Chung Tai ,  Yung-Lung Han ,  Chi-Feng Huang ,  Chun-Yi Kuo

    IPC: B41J2/14 ,  B41J2/16 ,  H01L29/423 ,  B41J2/045 ,  B41J2/175

    CPC classification number: B41J2/14016 ,  B41J2/1606 ,  H01L29/42372 ,  B41J2/0458 ,  B41J2/1635 ,  B41J2/175 ,  B41J2202/13

    Abstract: A wafer structure is disclosed and includes a chip substrate and plural inkjet chips having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.

    Wafer structure
    55.
    发明授权
    Wafer structure 有权

    公开(公告)号：US11712890B2

    公开(公告)日：2023-08-01

    申请号：US17116186

    申请日：2020-12-09

    Applicant: Microjet Technology Co., Ltd.

    Inventor： Hao-Jan Mou ,  Ying-Lun Chang ,  Hsien-Chung Tai ,  Chi-Feng Huang ,  Yung-Lung Han ,  Tsung-I Lin

    IPC: B41J2/14 ,  B41J2/16 ,  B41J2/335 ,  B41J2/17

    CPC classification number: B41J2/14024 ,  B41J2/14129 ,  B41J2/14072 ,  B41J2/1707 ,  B41J2/33595 ,  B41J2202/11 ,  B41J2202/13

    Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate which is fabricated by a semiconductor process. The plurality of inkjet chips include at least one first inkjet chip and at least one second inkjet chip. The plurality of inkjet chips are directly formed on the chip substrate by the semiconductor process, respectively, and diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each ink-drop generator includes a barrier layer, an ink-supply chamber and a nozzle. The ink-supply chamber and the nozzle are integrally formed in the barrier layer.

    WAFER STRUCTURE
    57.
    发明申请
    WAFER STRUCTURE 有权

    公开(公告)号：US20220219454A1

    公开(公告)日：2022-07-14

    申请号：US17528524

    申请日：2021-11-17

    Applicant: Microjet Technology Co., Ltd.

    Inventor： Hao-Jan Mou ,  Ying-Lun Chang ,  Hsien-Chung Tai ,  Yung-Lung Han ,  Chi-Feng Huang ,  Chun-Yi Kuo

    IPC: B41J2/14 ,  B41J2/155

    Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of at least 12 inches. The inkjet chips include at least one first inkjet chip and at least one second inkjet chip directly formed on the chip substrate by the semiconductor process, respectively, and the plurality of inkjet chips are diced into the at least one first inkjet chip and the at least one second inkjet chip for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by a semiconductor process and formed on the chip substrate. Each of the ink-drop generators includes a thermal-barrier layer, a resistance heating layer, a conductive layer, a protective layer, a barrier layer, an ink-supply chamber and a nozzle.

    Miniature pneumatic device
    59.
    发明授权
    Miniature pneumatic device 有权

    公开(公告)号：US10451051B2

    公开(公告)日：2019-10-22

    申请号：US15391999

    申请日：2016-12-28

    Applicant: MICROJET TECHNOLOGY CO., LTD.

    Inventor： Shih-Chang Chen ,  Chi-Feng Huang ,  Yung-Lung Han ,  Jia-Yu Liao ,  Shou-Hung Chen ,  Che-Wei Huang ,  Hung-Hsin Liao ,  Chao-Chih Chen ,  Jheng-Wei Chen ,  Ying-Lun Chang ,  Chia-Hao Chang ,  Wei-Ming Lee

    IPC: F04B45/047 ,  F04B53/10 ,  F16K99/00

    Abstract: A miniature pneumatic device includes a miniature fluid control device and a miniature valve device. The miniature fluid control device includes a gas inlet plate, a resonance plate, a piezoelectric actuator and a gas collecting plate. A first chamber is formed between the resonance plate and the piezoelectric actuator. After a gas is fed into the gas inlet plate, the gas is transferred to the first chamber through the resonance plate and then transferred downwardly. Consequently, a pressure gradient is generated to continuously push the gas. The miniature valve device includes a valve plate and a gas outlet plate. After the gas is transferred from the miniature fluid control device to the miniature valve device, the valve opening of the valve plate is correspondingly opened or closed and the gas is transferred in one direction. Consequently, a pressure-collecting operation or a pressure-releasing operation is selectively performed.

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