Reducing Memory Refresh Exit Time
    51.
    发明申请
    Reducing Memory Refresh Exit Time 有权
    减少内存刷新退出时间

    公开(公告)号:US20140016423A1

    公开(公告)日:2014-01-16

    申请号:US13938130

    申请日:2013-07-09

    Applicant: Rambus Inc.

    Abstract: Components of a memory system, such as a memory controller and a memory device, that reduce delay in exiting self-refresh mode by controlling the refresh timing of the memory device. The memory device includes a memory core. An interface circuit of the memory device receives an external refresh signal indicating an intermittent refresh event. A refresh circuit of the memory device generates an internal refresh signal indicating an internal refresh event of the memory device. A refresh control circuit of the memory device performs a refresh operation on a portion of the memory core responsive to the internal refresh event, at a time relative to the intermittent refresh event indicated by the external refresh signal.

    Abstract translation: 诸如存储器控制器和存储器设备的存储器系统的组件通过控制存储器件的刷新定时来减少退出自刷新模式的延迟。 存储器件包括存储器核。 存储装置的接口电路接收指示间歇刷新事件的外部刷新信号。 存储器件的刷新电路产生指示存储器件的内部刷新事件的内部刷新信号。 存储器件的刷新控制电路响应于内部刷新事件,在相对于由外部刷新信号指示的间歇刷新事件的时间,对存储器核心的一部分执行刷新操作。

Patent Agency Ranking