BUFFER CIRCUIT WITH ADAPTIVE REPAIR CAPABILITY

    公开(公告)号:US20230170039A1

    公开(公告)日:2023-06-01

    申请号:US18074188

    申请日:2022-12-02

    Applicant: Rambus Inc.

    Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.

    Memory system with error detection
    52.
    发明授权

    公开(公告)号:US11646094B2

    公开(公告)日:2023-05-09

    申请号:US17840765

    申请日:2022-06-15

    Applicant: Rambus Inc.

    Abstract: A memory controller generates error codes associates with write data and a write address and provides the error codes over a dedicated error detection code link to a memory device during a write operation. The memory device performs error detection, and in some cases correction, on the received write data and write address based on the error codes. If no uncorrectable errors are detected, the memory device furthermore stores the error codes in association with the write data. On a read operation, the memory device outputs the error codes over the error detection code link to the memory controller together with the read data. The memory controller performs error detection, and in some cases correction, on the received read data based on the error codes.

    LOW POWER SIGNALING INTERFACE
    53.
    发明申请

    公开(公告)号:US20230052220A1

    公开(公告)日:2023-02-16

    申请号:US17892291

    申请日:2022-08-22

    Applicant: Rambus Inc.

    Abstract: In a chip-to-chip signaling system includes at least one signaling link coupled between first and second ICs, the first IC has an interface coupled to the signaling link and timed by a first interface timing signal. The second IC has an interface coupled to the signaling link and timed by a second interface timing signal that is mesochronous with respect to the first interface timing signal. The second IC further has phase adjustment circuitry that adjusts a phase of the second interface timing signal using a digital counter implemented with Josephson-junction circuit elements.

    Memory module register access
    54.
    发明授权

    公开(公告)号:US11573849B2

    公开(公告)日:2023-02-07

    申请号:US17236445

    申请日:2021-04-21

    Applicant: Rambus Inc.

    Abstract: During system initialization, each data buffer device and/or memory device on a memory module is configured with a unique (at least to the module) device identification number. In order to access a single device (rather than multiple buffers and/or memory devices), a target identification number is written to all of the devices using a command bus connected to all of the data buffer devices or memory devices, respectively. The devices whose respective device identification numbers do not match the target identification number are configured to ignore future command bus transactions (at least until the debug mode is turned off.) The selected device that is configured with a device identification number matching the target identification number is configured to respond to command bus transactions.

    MEMORY CONTROLLER AND METHOD OF DATA BUS INVERSION USING AN ERROR DETECTION CORRECTION CODE

    公开(公告)号:US20220345155A1

    公开(公告)日:2022-10-27

    申请号:US17744311

    申请日:2022-05-13

    Applicant: Rambus Inc.

    Abstract: Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

    SYNCHRONOUS WIRED-OR ACK STATUS FOR MEMORY WITH VARIABLE WRITE LATENCY

    公开(公告)号:US20220077327A1

    公开(公告)日:2022-03-10

    申请号:US17445371

    申请日:2021-08-18

    Applicant: Rambus Inc.

    Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

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